2SA1952 / 2SA1906 / 2SA2006
Transistors
High-speed Switching Transistor (−60V,
−5A)
2SA1952 / 2SA1906 / 2SA2006
!Features
1) High speed switching. (tf : Typ. 0.15
µs
at I
C
= −3A)
2) Low V
CE(sat)
. (Typ.
−0.2V
at I
C
/ I
B
= −3
/
−0.15A)
3) Wide SOA. (safe operating area)
4) Complements the 2SC5103 / 2SC5525.
!External
dimensions
(Units : mm)
2SA1952
0.75
5.5
1.5
(3) (2) (1)
2.3
0.9
0.9
0.65
2.3
5.1
6.5
C0.5
1.0
0.5
0.5
1.5
2.5
9.5
!Absolute
maximum ratings
(Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
2SA1952
Collector
power
dissipation
2SA1906
2SA2006
Junction temperature
Storage temperature
Tj
Tstg
P
C
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limits
−100
−60
−5
−5
−10
1
10
1.5
25
2
25
150
−55 ∼ +150
Unit
V
V
V
A
A(Pulse)
W
W(Tc=25°C)
W
W(Tc=25°C)
W
W(Tc=25°C)
°C
°C
ROHM : CPT3
EIAJ : SC-63
2SA1906
13.1
3.2
(3) (2) (1)
5.08
2.54
2.3
0.8Min.
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
1.24
0.78
8.8
10.1
0.5Min.
!Packaging
specifications and h
FE
Type
Package
h
FE
Code
Basic ordering unit (pieces)
2SA1952
CPT3
Q
TL
2500
2SA1906
PSD3
DEF
TL
1000
2SA2006
TO-220FN
EF
−
500
ROHM : PSD3
EIAJ : SC-83A
2SA2006
0to0.3
(1) Base
(2) Collector
(3) Emitter
1.3
0.4
1.3
10.0
4.5
φ
3.2
15.0
12.0
8.0
5.0
1.2
14.0
1.3
0.8
4.5
2.8
2.54
2.54
(1) (2) (3)
(1) (2) (3)
0.75
2.6
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
ROHM : TO-220FN
!Electrical
characteristics
(Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current
transfer ratio
2SA1952
2SA1906
2SA2006
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
Cob
ton
tstg
tf
Min.
−100
−60
−5
−
−
−
−
−
−
120
60
100
−
−
−
−
−
Typ.
−
−
−
−
−
−
−
−
−
−
−
−
80
130
−
−
−
Max.
−
−
−
−10
−10
−0.3
−0.5
−1.2
−1.5
270
320
320
−
−
0.3
1.5
0.3
Unit
V
V
V
µA
µA
V
V
V
V
−
−
−
MHz
pF
µs
µs
µs
Conditions
I
C
=
−50µA
I
C
=
−1mA
I
E
=
−50µA
V
CB
=
−100V
V
EB
=
−5V
I
C
/I
B
=
−3A/−0.15A
I
C
/I
B
=
−4A/−0.2A
I
C
/I
B
=
−3A/−0.15A
I
C
/I
B
=
−4A/−0.2A
V
CE
=
−2V
, I
C
=
−1A
V
CE
=
−10V
, I
E
=
0.5A , f
=
30MHz
V
CB
=
−10V
, I
E
=
0A , f
=
1MHz
I
C
=
−3A
, R
L
=
10Ω
I
B1
=
−I
B2
=
−0.15A
V
CC
−30V
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
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