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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1591
N-CHANNEL MOSFET
FOR SWITCHING
DESCRIPTION
The 2SK1591, N-channel vertical type MOSFET, is a switching
device which can be driven directly by the output of ICs having a
5 V power source.
As the MOSFET has excellent switching characteristics and
high drain to source voltage, it is suitable for applications
PACKAGE DRAWING (Unit: mm)
2.8 ±0.2
0.4
+0.1
–0.05
1.5
0.65
+0.1
–0.15
2
2.9 ±0.2
0.95
requiring high voltage and high-speed.
3
0.4
+0.1
–0.05
FEATURES
• Directly driven by ICs having a 5 V power source.
• Not necessary to consider driving current because of its high
input impedance.
0.95
1
0.3
Marking
1.1 to 1.4
0.16
+0.1
–0.06
• Has high voltage and high-speed switching characteristics.
ORDERING INFORMATION
PART NUMBER
2SK1591
PACKAGE
SC-59 (Mini Mold)
1. Source
2. Gate
3. Drain
Marking: G18
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note
EQUIVALENT CIRCUIT
100
±20
±200
±400
200
150
−55
to +150
V
V
mA
mA
mW
°C
°C
Gate
Protection
Diode
Source
Gate
Body
Diode
Drain
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
Total Power Dissipation
Channel Temperature
Storage Temperature
Note
PW
≤
10 ms, Duty Cycle
≤
50%
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17807EJ3V0DS00 (3rd edition)
(Previous No. TC-2300A)
Date Published November 2005 NS CP(K)
Printed in Japan
0 to 0.1
1990
Microchip MCU
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