DATA SHEET
SILICON POWER TRANSISTOR
2SA1743
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SA1743 is a power transistor developed for high-speed
switching and features a high h
FE
at low V
CE(sat)
. This transistor is
ideal for use as a driver in DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• High h
FE
and low V
CE(sat)
:
h
FE
≥
100 (V
CE
=
−2
V, I
C
=
−2
A)
V
CE(sat)
≤
0.3 V (I
C
=
−6
A, I
B
=
−0.3
A)
• Full-mold package that does not require an insulating board or
bushing
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
Electrode Connection
1. Base
2. Collector
3. Emitter
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T
(Tc = 25°C)
P
T
(Ta = 25°C)
T
j
T
stg
Ratings
−100
−60
−7.0
−10
−20
−5.0
30
2.0
150
−55
to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
* PW
≤
300
µ
s, duty cycle
≤
10%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16126EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
2SA1743
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector to emitter voltage
Collector to emitter voltage
Symbol
V
CEO(SUS)
V
CEX(SUS)
Conditions
I
C
=
−6.0
A, I
B
=
−0.6
A, L = 1 mH
I
C
=
−6.0
A, I
B1
=
−I
B2
=
−0.6
A,
V
BE(OFF)
= 1.5 V, L = 180
µ
H, clamped
V
CB
=
−60
V, I
E
= 0
V
CE
=
−60
V, R
BE
= 50
Ω,
Ta = 125°C
V
CE
=
−60
V, V
BE(OFF)
= 1.5 V
V
CE
=
−60
V, V
BE(OFF)
= 1.5 V,
Ta = 125°C
V
EB
=
−5.0
V, I
C
= 0
V
CE
=
−2.0
V, I
C
=
−1.0
A
V
CE
=
−2.0
V, I
C
=
−2.0
A
V
CE
=
−2.0
V, I
C
=
−6.0
A
I
C
=
−6.0
A, I
B
=
−0.3
A
I
C
=
−8.0
A, I
B
=
−0.4
A
I
C
=
−6.0
A, I
B
=
−0.3
A
I
C
=
−8.0
A, I
B
=
−0.4
A
V
CB
=
−10
V, I
E
= 0, f = 1.0 MHz
V
CE
=
−10
V, I
C
=
−1.0
A
I
C
=
−6.0
A, R
L
= 8.3
Ω,
I
B1
=
−I
B2
=
−0.3
A, V
CC
≅ −50
V
Refer to the test circuit.
Fall time
t
f
0.3
230
80
0.3
1.5
100
100
60
−0.3
−0.5
−1.2
−1.5
V
V
V
V
pF
MHz
400
MIN.
−60
−60
−10
−1.0
−10
−1.0
−10
TYP.
MAX.
Unit
V
V
Collector cutoff current
Collector cutoff current
Collector cutoff current
Collector cutoff current
I
CBO
I
CER
I
CEX1
I
CEX2
µ
A
mA
µ
A
mA
Emitter cutoff current
DC current gain
DC current gain
DC current gain
Collector saturation voltage
Collector saturation voltage
Base saturation voltage
Base saturation voltage
Collector capacitance
Gain bandwidth product
Turn-on time
Storage time
I
EBO
h
FE1
*
h
FE2
*
h
FE3
*
V
CE(sat)1
*
V
CE(sat)2
*
V
BE(sat)1
*
V
BE(sat)2
*
C
ob
f
T
t
on
t
stg
µ
A
µ
s
µ
s
µ
s
* Pulse test PW
≤
350
µ
s, duty cycle
≤
2%
h
FE
CLASSIFICATION
Marking
h
FE2
M
100 to 200
L
150 to 300
K
200 to 400
SWITCHING TIME (t
on
, t
stg
, t
f
) TEST CIRCUIT
Base current
waveform
Collector current
waveform
2
Data Sheet D16126EJ1V0DS
2SA1743
TYPICAL CHARACTERISTICS (Ta = 25°C)
°
Total Power Dissipation P
T
(W)
Case Temperature T
C
(°C)
Case Temperature T
C
(°C)
Single pulse
Collector Current I
C
(A)
Collector Current I
C
(A)
I
C
Derating dT (%)
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Transient Thermal Resistance R
th(j−c)
(°C/W)
Without heatsink
With infinite heatsink
Pulse Width PW (s)
Data Sheet D16126EJ1V0DS
3
4
Base Saturation Voltage V
BE(sat)
(V)
Collector Saturation Voltage V
CE(sat)
(V)
Collector Current I
C
(A)
Collector Current I
C
(A)
Collector to Emitter Voltage V
CE
(V)
Gain Bandwidth Product f
T
(MHz)
Pulse test
Collector Capacitance C
ob
(pF)
Collector to Base Voltage V
CB
(V)
Data Sheet D16126EJ1V0DS
Fall Time t
f
(
µ
s)
StorageTime t
stg
(
µ
s)
Turn-On Time t
on
(
µ
s)
DC Current Gain h
FE
Collector Current I
C
(A)
Collector Current I
C
(A)
Collector Current I
C
(A)
Pulse test
2SA1743
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