INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
2SB1217
DESCRIPTION
·High
Collector Current -I
C
= -3A
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= -60V(Min)
·Good
Linearity of h
FE
·Low
Saturation Voltage
·Complement
to Type 2SD1818
APPLICATIONS
·Designed
for use in DC-DC converter, driver, solenid and
motor .
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Pulse
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
w
.cn
i
em
cs
.is
w
w
VALUE
-60
UNIT
V
V
-60
-7
V
-3
-5
-0.5
10
W
1.3
150
-55~150
℃
℃
A
A
A
P
C
Collector Power Dissipation
@ T
a
=25℃
T
J
T
stg
Junction Temperature
Storage Temperature Range
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SB1217
TYP.
MAX
UNIT
V
CE(
sat
)
V
BE(
sat
)
I
CBO
Collector-Emitter Saturation Voltage
I
C
= -1.5A; I
B
= -0.15A
B
-0.3
V
Base-Emitter Saturation Voltage
I
C
= -1.5A; I
B
= -0.15A
B
-1.2
V
μA
μA
Collector Cutoff Current
V
CB
= -60V; I
E
= 0
-10
I
EBO
h
FE-1
Emitter Cutoff Current
V
EB
= -7V; I
C
= 0
I
C
= -0.2A ; V
CE
= -2V
60
-10
DC Current Gain
h
FE-2
DC Current Gain
h
FE-3
DC Current Gain
Switching Times
t
on
t
stg
t
f
Turn-On Time
Storage Time
Fall Time
w
K
.cn
i
em
cs
.is
w
w
I
C
= -0.6A ; V
CE
= -2V
100
I
C
= -2.0A ; V
CE
= -2V
50
I
C
= -1.0A; I
B1
= -I
B2
= -0.1A;
R
L
= 10Ω; V
CC
≈
-10V
400
0.5
μs
μs
μs
2.0
0.5
h
FE-2
Classifications
M
100-200
L
160-320
200-400
isc Website：www.iscsemi.cn
2
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