DATA SHEET
DATA SHEET
SILICON TRANSISTOR
2SC3582
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC3582 is an NPN epitaxial silicon transistor designed for use in
low-noise and small signal amplifiers from VHF band to UHF band. Low-
noise figure, high gain, and high current capability achieve a very wide
dynamic range and excellent linearity. This is achieved by direct nitride
passivated base surface process (DNP process) which is an NEC
proprietary new fabrication technique.
5.5 MAX.
(0.216 MAX.)
PACKAFE DIMENSIONS
in millimeters (inches)
5.2 MAX.
(0.204 MAX.)
FEATURES
• NF
• Ga
1.2 dB TYP.
12 dB TYP.
@f = 1.0 GHz
@f = 1.0 GHz
0.5
(0.02)
1.77 MAX.
(0.069 MAX.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
65
20
10
1.5
65
600
150
to +150
V
V
V
mA
mW
C
C
1.27
(0.05)
2.54
(0.1)
1
2
3
1. Base
2. Emitter
3. Collector
EIAJ : SC-43B
JEDEC : TO-92
IEC
: PA33
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feed-Back Capacitance
Insertion Power Gain
Maximum Available Gain
Noise Figure
SYMBOL
I
CBO
I
EBO
h
FE
f
T
C
re
50
100
8
0.4
9
11
13
1.2
2.5
0.9
MIN.
TYP.
MAX.
1.0
1.0
250
GHz
pF
dB
dB
dB
UNIT
TEST CONDITIONS
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 8 V, I
C
= 20 mA
V
CE
= 8 V, I
C
= 20 mA
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
V
CE
= 8 V, I
C
= 20 mA, f = 1.0 GHz
V
CE
= 8 V, I
C
= 20 mA, f = 1.0 GHz
V
CE
= 8 V, I
E
= 7 mA, f = 1.0 GHz
A
A
S
21e
2
MAG
NF
h
FE
Classification
Class
Marking
h
FE
K
K
50 to 250
Document No. P10359EJ2V1DS00 (2nd edition)
Date Published March 1997 N
Printed in Japan
©
4.2 MAX.
(0.165 MAX.)
14 MIN.
(0.551 MIN.)
1984
2SC3582
TYPICAL CHARACTERISTICS (T
A
= 25
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
3
P
T
-Total Power Dissipation-mW
Free air
C
re
-Feed-back Capacitance-pF
f = 1.0 MHz
2
1000
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
1
0.7
0.5
0.3
0.2
500
0
50
100
150
0.1
1
T
A
-Ambient Temperature-°C
2
3
5
7
10
V
CB
-Collector to Base Voltage-V
INSERTION GAIN vs.
COLLECTOR CURRENT
20
30
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
V
CE
= 8 V
15
|S
21e
|
2
-Insertion Gain-dB
100
h
FE
-DC Current Gain
10
50
5
20
V
CE
= 8 V
f = 1.0 GHz
10
0.5
1
5
10
50
0
0.5
1
5
10
50 70
I
C
-Collector Current-mA
GAIN BANDWIDTH PRODUUT vs.
COLLECTOR CURRENT
30
V
CE
= 8 V
f
T
-Gain Bandwidth Product-GHz
20
MAG-Maximum Available Gain-dB
|S
21e
|
2
-Insetion Gain -dB
16
20
I
C
-Collector Current-mA
INSERTION GAIN, MAXIMUM AVAILABLE
GAIN vs. FREQUENCY
V
CE
= 8 V
I
C
= 20 mA
MAG
10
7
5
3
2
12
|S
21e
|
2
8
4
1
1
2
3
5
7
10
I
C
-Collector Current-mA
20
30
0
0.1
0.2
0.3
0.5 70. 1.0
f-Frequency-GHz
2.0 3.0
2
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