Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, PNP, Silicon,
| 参数名称 | 属性值 |
| 是否无铅 | 不含铅 |
| 是否Rohs认证 | 符合 |
| 包装说明 | IN-LINE, R-PSIP-T3 |
| Reach Compliance Code | compli |
| 最大集电极电流 (IC) | 0.3 A |
| 配置 | DARLINGTON WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 1000 |
| JESD-30 代码 | R-PSIP-T3 |
| JESD-609代码 | e1 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 峰值回流温度（摄氏度） | 260 |
| 极性/信道类型 | PNP |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子面层 | TIN SILVER COPPER |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | 10 |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 200 MHz |
| VCEsat-Max | 1.5 V |
| Base Number Matches | 1 |
| 2SA830STP/A | 2SA830S/AB | 2SA830STP/AB | 2SA830S/A | 2SA830/AB | 2SA830T93/A | 2SA830T93/AB | 2SA830/A | |
|---|---|---|---|---|---|---|---|---|
| 描述 | Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, PNP, Silicon, | Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, PNP, Silicon, | Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, PNP, Silicon, | Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, PNP, Silicon, | Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, PNP, Silicon, TO-92 | Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, PNP, Silicon, TO-92 | Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, PNP, Silicon, TO-92 | Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, PNP, Silicon, TO-92 |
| 包装说明 | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 |
| Reach Compliance Code | compli | compli | compli | compli | unknow | unknow | unknow | compli |
| 最大集电极电流 (IC) | 0.3 A | 0.3 A | 0.3 A | 0.3 A | 0.3 A | 0.3 A | 0.3 A | 0.3 A |
| 配置 | DARLINGTON WITH BUILT-IN RESISTOR | DARLINGTON WITH BUILT-IN RESISTOR | DARLINGTON WITH BUILT-IN RESISTOR | DARLINGTON WITH BUILT-IN RESISTOR | DARLINGTON WITH BUILT-IN RESISTOR | DARLINGTON WITH BUILT-IN RESISTOR | DARLINGTON WITH BUILT-IN RESISTOR | DARLINGTON WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 1000 | 1000 | 1000 | 1000 | 1000 | 1000 | 1000 | 1000 |
| JESD-30 代码 | R-PSIP-T3 | R-PSIP-T3 | R-PSIP-T3 | R-PSIP-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | ROUND | ROUND | ROUND | ROUND |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| 极性/信道类型 | PNP | PNP | PNP | PNP | PNP | PNP | PNP | PNP |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 200 MHz | 200 MHz | 200 MHz | 200 MHz | 200 MHz | 200 MHz | 200 MHz | 200 MHz |
| VCEsat-Max | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
实时操作系统RTOS
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