CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 30 Volts
CURRENT 100 mAmpere
2SK3541GP
FEATURE
* Small surface mounting type. (SOT-23)
* Low on-resistance
* Fast switching speed
* Easily designed drive circuits
* Easy to parallel
.110 (2.80)
.082 (2.10)
.119 (3.04)
SOT-23
.041 (1.05)
.033 (0.85)
(1)
.066 (1.70)
CONSTRUCTION
Silicon N-Channel MOSFET
(3)
(2)
.055 (1.40)
.047 (1.20)
.103 (2.64)
.086 (2.20)
.028 (0.70)
.020 (0.50)
.007 (0.177)
.018 (0.30)
.002 (0.05)
CIRCUIT
1
G
D
3
.045 (1.15)
.033 (0.85)
.019 (0.50)
S
2
T
A
= 25°C unless otherwise noted
Dimensions in inches and (millimeters)
SOT-23
Absolute Maximum Ratings
Symbol
Parameter
2SK3541GP
Units
V
DSS
V
GSS
I
D
I
DR
Drain-Source Voltage
Gate-Source Voltage - Continuous
Drain Current - Continuous
- Pulsed (Note1)
Reverse Drain Current - Continuous
- Pulsed (Note1)
30
V
V
mA
mA
mA
mA
mW
°C
°C
2004-06
±
20
100
400
100
400
150
150
-55 to 150
P
D
T
J
T
STG
Power Dissipation (Note2)
Operating Temperature Range
Storage Temperature Range
Note:
1. Pw < 10uA , Duty cycle < 1%
2. With each pin mounted on the recommended land
ELECTRICAL CHARACTERISTIC ( 2SK3541GP )
Electrical Characteristics
T
Symbol
Parameter
A
= 25°C unless otherwise noted
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 10µA
V
DS
= 30 V, V
GS
= 0 V
T
C
=125°C
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
30
1
0.5
1
-1
V
µA
mA
µA
µA
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
ON CHARACTERISTICS
V
GS(th)
R
DS(ON)
Gate Threshold Voltage
V
DS
= 3V, I
D
= 100 µA
0.8
5.0
7.0
20
1.5
8.0
13
V
Static Drain-Source On-Resistance V
GS
= 4.0 V, I
D
= 10 mA
V
GS
= 2.5 V, I
D
= 1.0 mA
Ω
mS
g
FS
Forward Transconductance
V
DS
= 3.0 V , I
D
= 10 m A
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
t
on
t
r
t
off
t
f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
V
DS
= 5.0 V, V
GS
= 0 V,
f = 1.0 MHz
13
9
4
pF
V
DD
= 5.0 V, R
L
= 500
Ω
,
I
D
= 10 mA, V
GS
= 5.0 V,
R
GEN
= 10
Ω
V
DD
= 5.0 V, R
L
= 500
Ω
,
I
D
= 10 mA, V
GS
= 5.0 V,
R
GEN
= 10
Ω
15
35
80
80
nS
Turn-Off Time
nS
RATING CHARACTERISTIC CURVES ( 2SK3541GP )
Typical Electrical Characteristics
FIG. 1 TYPICAL TRANSFER CHARACTERISTICS
FIG. 2 REVERSE DRAIN CURRENT V.S
SOURCE-DRAIN VOLTAGE
200m
100m
DRAIN CURRENT : I
D
(A)
REVERSE DRAIN CURRENT : I
DR
(A)
V
DS
=3V
Pulsed
200m
100m
50m
20m
10m
5m
2m
1m
0.5m
0.2m
0.1m
V
GS
=0V
Pulsed
50m
20m
10m
5m
2m
1m
0.5m
Ta=125°C
75°C
25°C
−25°C
Ta=125°C
75°C
25°C
−25°C
0.2m
0.1m
0
1
2
3
4
0
0.5
1
1.5
GATE-SOURCE VOLTAGE : V
GS
(V)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
FIG. 3 GATE THRESHOLD VOLTAGE V.S
CHANNEL TEMPERATURE
GATE THRESHOLD VOLTAGE : V
GS(th)
(V)
2
V
DS
=3V
I
D
=0.1mA
Pulsed
FORWARD TRANSFER
ADMITTANCE : |Yfs| (S)
1.5
FIG. 4 FROWARD TRANSFER ADMITTANCE V.S
DRAIN CURRENT
0.5
V
DS
=3V
Pulsed
0.2
Ta=−25°C
0.1
25°C
75°C
0.05
125°C
1
0.02
0.01
0.005
0.002
0.5
0
−50 −25
0
25
50
75
100
125 150
0.001
0.0001 0.0002
0.0005 0.001 0.002
0.005 0.01 0.02
0.05
0.1 0.2
0.5
CHANNEL TEMPERATURE : Tch (°C)
DRAIN CURRENT : I
D
(A)
RATING CHARACTERISTIC CURVES ( 2SK3541GP )
Typical Electrical Characteristics
(continued)
FIG. 5 STATIC DRAIN-SOURCE ON-STATE
RESISTANCE V.S DRAIN CURRENT
FIG. 6 STATIC DRAIN-SOURCE ON-STATE
RESISTANCE V.S DRAIN CURRENT
50
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
20
10
5
Ta=125°C
75°C
25°C
−25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
V
GS
=4V
Pulsed
50
Ta=125°C
75°C
25°C
−25°C
V
GS
=2.5V
Pulsed
20
10
5
2
1
0.5
0.001 0.002
2
1
0.5
0.001 0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0.005
0.01
0.02
0.05
0.1
0.2
0.5
DRAIN CURRENT : I
D
(A)
嵌入式系统
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