UNISONIC TECHNOLOGIES CO., LTD
2SA1797
POWER TRANSISTOR
FEATURES
* Low Saturation Voltage.
V
CE(SAT)
=-0.35V(MAX) at I
C
/ I
B
=-1A / -50mA
* Excellent DC Current Gain Characteristics
PNP SILICON TRANSISTOR
ORDERING INFORMATION
Ordering Number
Lead Free
2SA1797L-x-AA3-R
2SA1797L-x-AB3-R
2SA1797L-x-T9N-B
2SA1797L-x-T9N-K
2SA1797L-x-TN3-R
2SA1797L-x-TN3-T
Halogen Free
2SA1797G-x-AA3-R
2SA1797G-x-AB3-R
2SA1797G-x-T9N-B
2SA1797G-x-T9N-K
2SA1797G-x-TN3-R
2SA1797G-x-TN3-T
Package
SOT-223
SOT-89
TO-92NL
TO-92NL
TO-252
TO-252
Pin Assignment
1
2
3
B
C
E
B
C
E
E
C
B
E
C
B
B
C
E
B
C
E
Packing
Tape Reel
Tape Reel
Tape Box
Bulk
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
1 of 4
QW-R208-029,F
2SA1797
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
PULSE(Note 1)
TO-92NL
SOT-223
SOT-89
TO-252
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise specified)
RATINGS
-50
-50
-6
-2
-5
1
0.8
0.5
1.9
150
-55 ~ +150
UNIT
V
V
V
A
A
W
W
W
W
°C
°C
Collector Power Dissipation
P
C
Junction Temperature
T
J
Storage Temperature
T
STG
Note: 1. Single pulse, P
W
=10ms
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Output Capacitance
Note: Measured using pulse current.
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)
h
FE
f
T
C
OB
TEST CONDITIONS
I
C
= -50μA
I
C
= -1mA
I
E
= -50μA
V
CB
= -50V
V
EB
= -5V
I
C
/I
B
= -1A/-50mA (Note)
V
CE
= -2V, I
C
=-0.5A (Note)
V
CE
= -2V, I
E
=0.5A, f=100MHz
V
CB
= -10V, I
E
=0A, f=1MHz
MIN
-50
-50
-6
MAX UNIT
V
V
V
-0.1
μA
-0.1
μA
-0.15 -0.35
V
400
200
MHz
36
pF
TYP
120
CLASSIFICATION OF h
FE
RANK
RANGE
A
120-240
B
200-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R208-029,F
2SA1797
TYPICAL CHARACTERISTICS
Grounded Emitter Output
Characteristics
T
A
=25°С
I
B
=10mA
9mA
8mA
7 mA
PNP SILICON TRANSISTOR
2.0
Collector Current, I
C
(A)
1.8
1.6
1.4
1.2
1
800m
600m
400m
200m
0
6 mA
5mA
4mA
3mA
2mA
1mA
-10
-5
-2
-1
-0.5
-0.2
-0.1
-0.05
-0.02
-0.01
-5m
Grounded Emitter Propagation
Characteristics
V
CE
=2V
Collector Current, I
C
(mA)
=1
00
°
С
T
A
=2
0 1 2 3 4 5 6 7 8 9 10
Collector to Emitter Voltage, V
CE
(V)
-2m
-1m
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
Base to Emitter Voltage, V
BE
(V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Collector Saturation voltage, V
CE(SAT)
(V)
DC Current Gain, h
FE
T
A
=
T
A
-40°
5°
С
С
3 of 4
QW-R208-029,F
2SA1797
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 4
QW-R208-029,F
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
