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“Standard”:
2.
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1485
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The 2SK1485, N-channel vertical type MOS FET is a switching device
which can be driven directly by the output of ICs having a 5 V power source.
As the MOS FET has low on-state resistance and excellent switching
characteristics, it is suitable for driving actuators such as motors, relays,
0.8 MIN.
PACKAGE DRAWING (Unit : mm)
4.5 ± 0.1
1.6 ± 0.2
2.5 ± 0.1
4.0 ± 0.25
1.5 ± 0.1
and solenoids.
1
0.42
±0.06
2
3
FEATURES
•
Directly driven by ICs having a 5 V power source.
•
Low on-state resistance
R
DS(on)1
= 1.2
Ω
MAX. (V
GS
= 4.0 V, I
D
= 0.5 A)
R
DS(on)2
= 0.8
Ω
MAX. (V
GS
= 10 V, I
D
= 0.5 A)
•
Complementary to 2SJ199.
0.42
0.47 ±0.06
1.5 ±0.06
3.0
0.41
+0.03
–0.05
1.Source
2.Drain
3.Gate
MARK : NC
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
5
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
100
±20
±1.0
±2.0
2.0
150
−55
to +150
V
V
A
A
W
°C
°C
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Gate
Body
Diode
Notes1.
PW
≤
10 ms, Duty Cycle
≤
50%
2.
Mounted on ceramic board of 16 cm
2
×
0.7 mm
Remark
Gate
Protection
Diode
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D15680EJ3V0DS00 (3rd edition)
(Previous No. TC-2349)
Date Published July 2001 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
©
1991, 2001
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