MITSUBISHI IGBT MODULES
CM100DUS-12F
HIGH POWER SWITCHING USE
INSULATED TYPE
CM100DUS-12F
- 4
th
generation Fast switching IGBT module -
Collector current I
C
.............…............…
Collector-emitter voltage V
CES
...........…
Maximum junction temperature T
jmax
...
●Flat
base Type
●Copper
base plate
●RoHS
Directive compliant
100
A
600
V
1 5 0
°C
●UL
Recognized under UL1557, File E323585
Dual (Half-Bridge)
APPLICATION
High frequency (30 kHz ~ 60 kHz) switching use: Induction heating, Power supply, etc.
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
INTERNAL CONNECTION
Tolerance otherwise specified
Division of Dimension
0.5
over
over
3
6
to
to
to
3
6
30
Tolerance
±0.2
±0.3
±0.5
±0.8
±1.2
RTC
C2E1
Tr2
Di2
RTC
G1 E1
Di1
E2
Tr1
C1
over 30
over 120
to 120
to 400
E2 G2
1
February-2011
MITSUBISHI IGBT MODULES
CM100DUS-12F
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (T
j
=25 °C, unless otherwise specified)
Symbol
V
CES
V
GES
I
C
I
CRM
P
tot
P
tot
'
I
E
I
ERM
T
j
T
stg
V
isol
(Note.1)
(Note.1)
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Total power dissipation
Emitter current
(Free wheeling diode forward current)
Junction temperature
Storage temperature
Isolation voltage
G-E short-circuited
C-E short-circuited
T
C
=25 °C
T
C
=25 °C
T
C
'=25 °C
T
C
=25 °C
-
-
(Note.2)
Conditions
Rating
600
±20
100
Unit
V
V
A
W
A
°C
V
Pulse, Repetitive
(Note.2, 5)
(Note.3, 5)
(Note.2)
(Note.4)
200
350
445
100
Pulse, Repetitive
(Note.4)
200
-40 ~ +150
-40 ~ +125
2500
Terminals to base plate, RMS, f=60 Hz, AC 1 min
ELECTRICAL CHARACTERISTICS (T
j
=25 °C, unless otherwise specified)
Symbol
I
CES
I
GES
V
GE(th)
V
CEsat
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
V
EC
t
rr
Q
rr
E
on
E
off
E
rr
r
g
(Note.1)
(Note.1)
(Note.1)
(Note.1)
Item
Collector-emitter cut-off current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Turn-on switching energy per pulse
Turn-off switching energy per pulse
Reverse recovery energy per pulse
Internal gate resistance
Conditions
V
CE
=V
CES
, G-E short-circuited
±V
GE
=V
GES
, C-E short-circuited
I
C
=10 mA, V
CE
=10 V
I
C
=100 A
V
GE
=15 V
(Note.6)
Limits
Min.
-
-
5
T
j
=25 °C
T
j
=125 °C
1.7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
6
2.0
1.95
-
-
-
620
-
-
-
-
2.0
-
1.9
1.55
2.2
1.2
0
Max.
1
20
7
2.7
-
27
1.8
1.0
-
100
80
300
150
2.6
150
-
-
-
-
-
Unit
mA
μA
V
V
,
V
CE
=10 V, G-E short-circuited
V
CC
=300 V, I
C
=100 A, V
GE
=15 V
V
CC
=300 V, I
C
=100 A, V
GE
=±15 V,
R
G
=6.3
Ω,
Inductive load
I
E
=100 A
(Note.6)
nF
nC
ns
, G-E short-circuited
V
ns
μC
mJ
Ω
V
CC
=300 V, I
E
=100 A, V
GE
=±15 V,
R
G
=6.3
Ω,
Inductive load
V
CC
=300 V, I
C
=I
E
=100 A,
V
GE
=±15 V, R
G
=6.3
Ω,
T
j
=125 °C,
Inductive load
Per switch
THERMAL RESISTANCE CHARACTERISTICS
Symbol
R
th(j-c)Q
R
th(j-c)D
R
th(c-s)
R
th(j-c')Q
R
th(j-c')D
Item
Thermal resistance
(Note.2)
Conditions
Junction to case, per IGBT
(Note.2)
Limits
Min.
-
-
-
-
-
Typ.
-
-
0.07
-
-
Max.
0.35
0.70
-
0.28
0.40
Unit
K/W
K/W
K/W
K/W
K/W
Contact thermal resistance
Thermal resistance
(Note.3)
Junction to case, per FWDi
Case to heat sink, per 1/2 module,
(Note.7)
Thermal grease applied
Junction to case, per IGBT
Junction to case, per FWDi
MECHANICAL CHARACTERISTICS
Symbol
M
t
M
s
m
e
c
Mounting torque
Weight
Flatness of base plate
Item
Main terminals
Mounting to heat sink
-
On the centerline X, Y
(Note.8)
Conditions
M 5 screw
M 6 screw
Limits
Min.
2.5
3.5
-
-100
Typ.
3.0
4.0
310
-
Max.
3.5
4.5
-
+100
Unit
N·m
g
μm
2
February-2011
MITSUBISHI IGBT MODULES
CM100DUS-12F
HIGH POWER SWITCHING USE
INSULATED TYPE
RECOMMENDED OPERATING CONDITIONS (T
a
=25 °C)
Symbol
V
CC
V
GEon
R
G
Item
(DC) Supply voltage
Gate (-emitter drive) voltage
External gate resistance
Conditions
Applied across C1-E2
Applied across G1-Es1/G2-Es2
Per switch
Limits
Min.
-
13.5
6.3
Typ.
300
15.0
-
Max.
400
16.5
63
Unit
V
Ω
Note.1: Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
Note.2: Case temperature (T
C
) measured point is base plate side. (Refer to the figure of chip location)
Note.3: Case temperature (T
C
') and heat sink temperature (T
s
') are defined on the each surface of base plate and heat sink
just under the chips. (Refer to the figure of chip location)
The heat sink thermal resistance {R
t h ( s - a )
} should measure just under the chips.
Note.4: Pulse width and repetition rate should be such that the device junction temperature (T
j
) dose not exceed T
j m a x
rating.
Note.5: Junction temperature (T
j
) should not increase beyond T
j m a x
rating.
Note.6: Pulse width and repetition rate should be such as to cause negligible temperature rise.
(Refer to the figure of test circuit)
Note.7: Typical value is measured by using thermally conductive grease of
λ=0.9
W/(m·K).
Note.8: Base plate flatness measurement points are as in the following figure.
-: Concave
+: Convex
3 mm
X
3 mm
Y
Bottom
3 mm
Bottom
-: Concave
Bottom
+: Convex
CHIP LOCATION
(Top view)
Dimension in mm, tolerance: ±1 mm
Case Temperature (T
C
)
measured point
(Base plate side)
Tr1/Tr2: IGBT, Di1/Di2: FWDi
3
February-2011
MITSUBISHI IGBT MODULES
CM100DUS-12F
HIGH POWER SWITCHING USE
INSULATED TYPE
TEST CIRCUIT AND WAVEFORMS
C1
V
GE
=15 V
G1
C1
Short-
circuited
Short-
circuited
G1
Es1
C1
C1
Short-
circuited
I
C
G1
I
E
G1
Es1
V
C2E1
V
C2E1
V
Short-
circuited
Es1
V
Es1
C2E1
V
GE
=15 V
G2
C2E1
I
C
E2
Short-
circuited
G2
Short-
circuited
G2
Es2
I
E
E2
G2
Es2
Es2
E2
Es2
E2
Tr1
V
C E s a t
test circuit
i
E
Tr2
v
GE
Di1
V
EC
test circuit
∼
90 %
0
Di2
0V
-V
GE
i
E
t
Q
r r
=0.5×I
r r
×t
r r
t
rr
I
E
Load
+
V
CC
i
C
∼
0A
90 %
t
I
rr
+V
GE
0V
-V
GE
R
G
v
GE
v
CE
i
C
0A
t
d (o n )
t
r
t
d( o ff)
10%
t
f
t
0.5×I
r r
Switching characteristics test circuit and waveforms
t
r r
, Q
r r
test waveform
I
EM
v
EC
V
CC
i
E
v
CE
I
CM
V
CC
i
C
i
C
V
CC
I
CM
v
CE
0A
t
0
0.1×I
CM
0.1×V
CC
t
0
0.1×V
CC
0.1×I
CM
t
0V
t
t
i
t
i
t
i
IGBT Turn-on switching energy
IGBT Turn-off switching energy
FWDi Reverse recovery energy
Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)
4
February-2011
MITSUBISHI IGBT MODULES
CM100DUS-12F
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
OUTPUT CHARACTERISTICS
(TYPICAL)
T
j
=25 °C
200
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
V
GE
=15 V
3
13 V 11 V 10 V 9.5 V
9 V
8.5
2.5
V
GE
=20 V
180
15 V
160
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CEsat
(V)
I
C
(A)
T
j
=125 °C
2
140
COLLECTOR CURRENT
120
8 V
100
1.5
T
j
=25 °C
80
7.5
60
1
40
7 V
20
0.5
0
0
1
2
3
4
5
0
0
50
100
150
200
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
T
j
=25 °C
5
1000
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
G-E short-circuited , T
j
=25 °C
4.5
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CEsat
(V)
4
I
C
=200 A
I
C
=100 A
I
C
=40 A
I
E
(A)
EMITTER CURRENT
18
20
100
3.5
3
2.5
2
10
1.5
1
0.5
0
6
8
10
12
14
16
1
0
0.5
1
1.5
2
2.5
3
3.5
4
GATE-EMITTER VOLTAGE
V
GE
(V)
EMITTER-COLLECTOR VOLTAGE
V
EC
(V)
5
February-2011
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