MITSUBISHI IGBT MODULES
CM400HA-24A
HIGH POWER SWITCHING USE
INSULATED TYPE
CM400HA-24A
●I
C
….………………….…….. 400 A
●V
CES
……………..…...….. 1200 V
●Flat
base Type
Copper (non-plating) base plate
No accessory (terminal screw) attach
●RoHS
Directive compliant
Single
APPLICATION
AC Motor Control, Motion/Servo Control, Power supply, etc.
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
INTERNAL CONNECTION
Tolerance otherwise specified
Division of Dimension
0.5
over
over
3
6
to
to
to
3
6
30
Tolerance
±0.2
±0.3
±0.5
±0.8
±1.2
Di1
E
Tr1
E
G
C
over 30
over 120
to 120
to 400
1
January-2011
MITSUBISHI IGBT MODULES
CM400HA-24A
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (T
j
=25 °C, unless otherwise specified)
Symbol
V
CES
V
GES
I
C
I
CRM
P
tot
I
E
I
ERM
T
j
T
stg
V
isol
(Note.1)
(Note.1)
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Total power dissipation
Emitter current
(Free wheeling diode forward current)
Junction temperature
Storage temperature
Isolation voltage
G-E short-circuited
C-E short-circuited
DC, T
C
=87 °C
T
C
=25 °C
T
C
=25 °C
-
-
Conditions
Rating
1200
±20
400
800
2350
400
Unit
V
V
A
W
A
°C
V
(Note.2)
(Note.3)
Pulse, Repetitive
(Note.2, 4)
(Note.2, 4)
Pulse, Repetitive
(Note.3)
800
-40 ~ +150
-40 ~ +125
2500
Terminals to base plate, RMS, f=60 Hz, AC 1 min
MECHANICAL CHARACTERISTICS
Symbol
M
t
M
t
M
s
m
e
c
Weight
Flatness of base plate
Mounting torque
Item
Main terminals
Auxiliary terminals
Mounting to heat sink
-
On the centerline X, Y
(Note.5)
Conditions
M 6 screw
M 4 screw
M 6 screw
Limits
Min.
1.96
0.98
1.96
-
±0
Typ.
2.45
1.18
2.45
480
-
Max.
2.94
1.47
2.94
-
+100
Unit
N·m
g
μm
ELECTRICAL CHARACTERISTICS (T
j
=25 °C, unless otherwise specified)
Symbol
I
CES
I
GES
V
GE(th)
V
CEsat
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
V
EC
t
rr
Q
rr
E
on
E
off
E
rr
r
g
R
G
(Note.1)
(Note.1)
(Note.1)
(Note.1)
Item
Collector-emitter cut-off current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Turn-on switching energy per pulse
Turn-off switching energy per pulse
Reverse recovery energy per pulse
Internal gate resistance
External gate resistance
Conditions
V
CE
=V
CES
, G-E short-circuited
±V
GE
=V
GES
, C-E short-circuited
I
C
=40 mA, V
CE
=10 V
I
C
=400 A
V
GE
=15 V
(Note.6)
Limits
Min.
-
-
6
T
j
=25 °C
T
j
=125 °C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.78
Typ.
-
-
7
2.1
2.4
-
-
-
2000
-
-
-
-
3.0
-
14.7
50.4
41.8
20
1.5
-
Max.
1
1
8
3.0
-
70
6.0
1.4
-
550
180
600
350
3.8
250
-
-
-
-
-
10
Unit
mA
μA
V
V
,
V
CE
=10 V, G-E short-circuited
V
CC
=600 V, I
C
=400 A, V
GE
=15 V
V
CC
=600 V, I
C
=400 A, V
GE
=±15 V,
R
G
=0.78
Ω,
Inductive load
I
E
=400 A
(Note.6)
nF
nC
ns
, G-E short-circuited
V
ns
μC
mJ
Ω
Ω
V
CC
=600 V, I
E
=400 A, V
GE
=±15 V,
R
G
=0.78
Ω,
Inductive load
V
CC
=600 V, I
C
=I
E
=400 A,
V
GE
=±15 V, R
G
=0.78
Ω,
T
j
=125 °C, Inductive load
T
C
=25 °C
-
THERMAL RESISTANCE CHARACTERISTICS
Symbol
R
th(j-c)Q
R
th(j-c)D
R
th(c-s)
Item
Thermal resistance
(Note.2)
Conditions
Junction to case, IGBT part
(Note.2)
Limits
Min.
-
-
-
Typ.
-
-
20
Max.
53
80
-
Unit
K/kW
K/kW
K/kW
Contact thermal resistance
Junction to case, FWDi part
Case to heat sink,
(Note.7)
Thermal grease applied
2
January-2011
MITSUBISHI IGBT MODULES
CM400HA-24A
HIGH POWER SWITCHING USE
INSULATED TYPE
Note.1: Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
Note.2: Case temperature (T
C
) and heat sink temperature (T
s
) are defined on the each surface of base plate and heat sink
just under the chips. (Refer to the figure of chip location)
The heat sink thermal resistance {R
t h ( s - a )
} should measure just under the chips.
Note.3: Pulse width and repetition rate should be such that the device junction temperature (T
j
) dose not exceed T
j m a x
rating.
Note.4: Junction temperature (T
j
) should not increase beyond T
j m a x
rating.
Note.5: Base plate flatness measurement point is as in the following figure.
-: Concave
+: Convex
Bottom
X
Y
Bottom
-: Concave
Bottom
+: Convex
Note.6: Pulse width and repetition rate should be such as to cause negligible temperature rise.
(Refer to the figure of test circuit)
Note.7: Typical value is measured by using thermally conductive grease of
λ=0.9
W/(m·K).
CHIP LOCATION (Top view)
Dimension in mm, tolerance: ±1 mm
Tr1: IGBT, Di1: FWDi. Each mark points the center position of each chip.
3
January-2011
MITSUBISHI IGBT MODULES
CM400HA-24A
HIGH POWER SWITCHING USE
INSULATED TYPE
TEST CIRCUIT AND WAVEFORMS
C
V
GE
=15 V
G
C
short-
circuited
G
I
C
I
E
V
Es
V
E
Es
E
V
EC
test circuit
v
GE
V
C E s a t
test circuit
i
E
∼
90 %
0
0V
-V
GE
i
E
t
Q
rr
=0.5×I
rr
×t
r r
t
rr
I
E
Load
+
V
CC
∼
i
C
0A
90 %
t
I
rr
+V
GE
0V
-V
GE
R
G
v
CE
v
GE
i
C
0.5×I
r r
10 %
0A
t
d ( o n )
t
r
t
d( o ff)
t
f
t
Switching characteristics test circuit and waveforms
t
r r
, Q
r r
test waveform
i
E
I
EM
v
EC
V
CC
v
CE
I
CM
V
CC
i
C
i
C
V
CC
I
CM
v
CE
0A
t
0
0.1×I
CM
0.1×V
CC
t
0
0.1×V
CC
0.02×I
CM
t
0V
t
t
i
t
i
t
i
IGBT Turn-on switching energy
IGBT Turn-off switching energy
FWDi Reverse recovery energy
Turn-on, Turn-off switching and Reverse recovery energy test waveforms (integral range)
4
January-2011
MITSUBISHI IGBT MODULES
CM400HA-24A
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
V
GE
=15 V
4
OUTPUT CHARACTERISTICS
(TYPICAL)
T
j
=25 °C
800
V
GE
=20 V
700
13 V
15 V
T
j
=125 °C
12 V
I
C
(A)
600
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CEsat
(V)
3
COLLECTOR CURRENT
500
400
2
T
j
=25 °C
11 V
300
200
10 V
100
1
9 V
0
0
2
4
6
8
10
0
0
200
400
600
800
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
T
j
=25 °C
10
1000
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
G-E short-circuited
8
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CEsat
(V)
I
C
=800 A
I
C
=400 A
I
E
(A)
T
j
=125 °C
6
EMITTER CURRENT
I
C
=160 A
100
T
j
=25 °C
4
2
0
6
8
10
12
14
16
18
20
10
0
1
2
3
4
5
GATE-EMITTER VOLTAGE
V
GE
(V)
EMITTER-COLLECTOR VOLTAGE
V
EC
(V)
5
January-2011
Microchip MCU
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