TSD965A
Low Vcesat NPN Transistor
TO-92
Pin Definition:
1. Emitter
2. Collector
3. Base
PRODUCT SUMMARY
BV
CBO
BV
CEO
I
C
V
CE(SAT)
100V
20V
5A
0.35V @ I
C
/ I
B
= 3A / 100mA
Features
●
●
Low V
CE(SAT)
0.35V @ I
C
/ I
B
= 3A / 100mA (Typ.)
Excellent DC current gain characteristics
Ordering Information
Part No.
TSD965ACT B0
TSD965ACT A3
Package
TO-92
TO-92
Packing
1Kpcs / Bulk
2Kpcs / Ammo
Structure
●
●
Epitaxial Planar Type
NPN Silicon Transistor
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
Limit
100
95
20
6
5
8 (note1)
0.75
+150
- 55 to +150
Unit
V
V
V
V
A
W
C
o
C
o
Collector Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: Note: Pulse test: pulse width
≤300uS,
Duty cycle≤2%
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Conditions
Symbol
BV
CBO
BV
CES
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)
V
CE(SAT)
h
FE
h
FE
h
FE
f
T
Cob
Min
100
95
20
6
--
--
--
--
230
260
150
--
--
Typ
--
--
--
--
0.35
--
0.35
--
--
--
--
150
--
Max
--
--
--
--
0.5
0.5
0.5
0.5
--
560
--
--
50
Unit
V
V
V
V
uA
uA
V
I
C
= 50uA, I
E
= 0
I
C
= 50uA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 50uA, I
C
= 0
V
CB
= 50V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 3A, I
B
= 100mA
Collector-Emitter Saturation Voltage
I
C
= 3A, I
B
= 60mA
V
CE
= 2V, I
C
= 20mA
DC Current Transfer Ratio
V
CE
= 2V, I
C
= 500mA
V
CE
= 2V, I
C
= 2A
V
CE
=6V, I
C
=50mA,
Transition Frequency
f=100MHz
Output Capacitance
V
CB
= 20V, f=1MHz
Note: Pulse test: pulse width
≤300uS,
Duty cycle≤2%
MHz
pF
1/4
Version: A08
TSD965A
Low Vcesat NPN Transistor
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Figure 1. DC Current Gain
Figure 2. V
CE(SAT)
v.s. Ic
Figure 3. V
BE(SAT)
v.s. Ic
Figure 4. Power Derating Curve
2/4
Version: A08
TSD965A
Low Vcesat NPN Transistor
TO-92 Mechanical Drawing
DIM
A
B
C
D
E
F
G
H
TO-92 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
4.30
4.70
0.169
0.185
4.30
4.70
0.169
0.185
14.30(typ)
0.563(typ)
0.43
0.49
0.017
0.019
2.19
2.81
0.086
0.111
3.30
3.70
0.130
0.146
2.42
2.66
0.095
0.105
0.37
0.43
0.015
0.017
3/4
Version: A08
TSD965A
Low Vcesat NPN Transistor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for
such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for
any damages resulting from such improper use or sale.
4/4
Version: A08
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