Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1568
DESCRIPTION
・With
TO-220F package
・Complement
to type 2SD2399
・High
DC current gain.
・Low
saturation voltage.
・DARLINGTON
APPLICATIONS
・For
power amplifier applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
固电
IN
导½
半
Fig.1 simplified outline (TO-220F) and symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
ANG
CH
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
UCT
ND
O
VALUE
-80
-80
-7
-4
-6
UNIT
V
V
V
A
A
T
C
=25℃
P
C
Collector dissipation
30
W
2
T
j
T
stg
Junction temperature
Storage temperature
150
-55~150
℃
℃
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SB1568
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-1mA; I
B
=0
-80
V
V
(BR)CBO
Collector-base breakdown voltage
I
C
=-50μA; I
E
=0
-80
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=-5mA; I
C
=0
-7
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-2A ; I
B
=-4mA
-1.0
-3.0
V
I
CBO
Collector cut-off current
V
CB
=-80V;I
E
=0
-100
μA
I
EBO
Emitter cut-off current
V
EB
=-5V;I
C
=0
-3.0
mA
h
FE
DC current gain
C
OB
f
T
固电
IN
Output capacitance
导½
半
I
C
=-2A ; V
CE
=-3V
1000
10000
I
E
=0 ; V
CB
=-10V;f=1MHz
Transition frequency
ANG
CH
MIC
E SE
I
C
=-0.5A ; V
CE
=-5V;f=10MHz
DUC
ON
35
12
OR
T
pF
MHz
2