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DTA124ESAB3G

产品描述Small Signal Bipolar Transistor
产品类别分立半导体    晶体管   
文件大小249KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
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DTA124ESAB3G概述

Small Signal Bipolar Transistor

DTA124ESAB3G规格参数

参数名称属性值
厂商名称Taiwan Semiconductor
包装说明,
Reach Compliance Codeunknown

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DTA124 EM/ESA
Taiwan Semiconductor
Small Signal Product
PNP Small Signal Transistor
FEATURES
- Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistor
(see equivalent circuit).
- The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
- Only the on/off conditions need to be set for
operation, marking device design easy.
- Packing code with suffix "G" means
green compound (halogen-free)
Equivalent Circuit
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Power Dissipation
Supply Voltage
Input Voltage
Output Current
Junction and Storage Temperature Range
SYMBOL
P
D
V
CC
V
IN
I
O
TJ, T
STG
EM
100
-50
-40 ~ +10
-30
-55 to + 150
VALUE
ESA
300
UNIT
mW
V
V
mA
°C
PARAMETER
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
SYMBOL
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
MIN
-0.5
TYP
MAX
-3
-0.3
-0.36
-0.5
CONDITION
V
CC
= -5V, I
O
= -100μA
V
O
= -0.2V, I
O
= -5mA
I
O
/ I
I
= -10mA / -0.5mA
V
I
=-5V
V
CC
= -50V, V
I
=0
V
O
= -5V, I
O
= -5mA
UNIT
V
V
mA
μA
KΩ
56
15.4
0.8
22
1
250
28.6
1.2
V
O
= -10V,I
O
= -5mA, f=100MHz
MHz
Document Number: DS_S0000010
Version: E15

 
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