SBR0530S3 - Prel
SBR0530S5 - Prel
Using state-of-the-art SBR IC process technology,
the following features are made possible in a single device:
Major ratings and characteristics
Values
Characteristics
I
F(AV)
Rectangular Waveform
V
RRM
V
F
@0.5A, T
J
=75 C
T
J
(operating/storage)
o
Units
A
V
V, typ
o
C
0.5
30
0.43
-65 to 125
ELECTRICAL:
*
Low Forward Voltage Drop
*
Reliable High Temperature Operation
*
Super Barrier Design
*
Softest, fast switching capability
o
* 125
C
Operating Junction Temperature
MECHANICAL:
*
Molded Plastic SOD-323, SOD-523 packages
SBR0530S3
Cathode Mark
A
SBR0530S5
A
B
B
SOD-323
Di
A
C
D
G
B
C
D
E
F
H
G
H
Min
2.30
1.60
0.25
1.15
0.10
0.85
-
0.20
Max
2.70
1.80
C
0.40
C
1.45
D
0.18
1.05
0.10
0.40
E
E
F
D
Di
A
B
SOD-523
Min
1.60
0.8
0.70
Max
1.80
1.0
0.85
0.35 (typ)
0.30 (typ)
0.70 (typ)
All Dimensions in mm
All Dimensions in mm
F
E
F
SOD-323
SOD-523
___________________________________________________________________________________________________
www.apdsemi.com
Version 0.0 - Preliminary, April 2006
1
SBR0530S3 - Prel
SBR0530S5 - Prel
Maximum Ratings and Electrical Characteristics
o
(at 25
C
unless otherwise specified)
SYMBOL
DC Blocking Voltage
Working Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
(Rated V
R
- 20Khz Square Wave) - 50% duty cycle
Peak Forward Surge Current - 1/2 60hz
Instantaneous Forward Voltage
I
F
= 500mA; T
J
= 25
o
C
I
F
= 500mA; T
J
= 75 C
Maximum Reverse Current at Rated V
RM
T
J
= 25 C
T
J
= 75 C
Operating and Storage Junction Temperature
* Pulse width < 300 uS, Duty cycle < 2%
T
J
o
o
o
UNITS
30
Volts
V
RM
V
RWM
V
RRM
I
O
I
FSM
Typ
---
---
Typ
---
---
0.5
2
Max
0.47
0.45
Max
100
500
-65 to +125
Amps
Amps
V
F
Volts
I
R
*
uA
uA
o
C
APD SEMICONDUCTOR reserves the right to make changes without further notice to any products herein. APD SEMICONDUCTOR makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does APD SEMICONDUCTOR assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special,
consequential or incidental damages. “Typical” parameters which may be provided in APD SEMICONDUCTOR data sheets and/or specifications can and do vary in different applications and actual performance may vary over
time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APD SEMICONDUCTOR does not convey any license under its patent rights nor the rights of
others. APD SEMICONDUCTOR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any
other application in which the failure of the APD SEMICONDUCTOR product could create a situation where personal injury or death may occur. Should Buyer purchase or use APD SEMICONDUCTOR products for any such
unintended or unauthorized application, Buyer shall indemnify and hold APD SEMICONDUCTOR and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses,
and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APD SEMICONDUCTOR was negligent
regarding the design or manufacture of the part..
1 Lagoon Drive, Suite 410, Redwood City, CA 94065, USA
Ph: 650 508 8896 FAX: 650 508 8865
Homepage: www.apdsemi.com
email: info@apdsemi.com
___________________________________________________________________________________________________
www.apdsemi.com
Version 0.0 - Preliminary, April 2006
2
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