2SB1386 / 2SB1412 / 2SB1326
Transistors
Low frequency transistor (−20V,
−5A)
2SB1386 / 2SB1412 / 2SB1326
Features
1) Low V
CE(sat)
.
V
CE(sat)
=
−0.35V
(Typ.)
(I
C
/I
B
=
−4A
/
−0.1A)
2) Excellent DC current gain characteristics.
3) Complements the 2SD2098 / 2SD2118 /
2SD2097.
External dimensions
(Unit : mm)
2SB1386
0.5±0.1
4.5
+0.2
−
0.1
1.6±0.1
1.5
+0.2
−
0.1
2SB1412
1.5
±
0.3
6.5
±
0.2
5.1
+
0.2
−0.1
C0.5
2.3
+
0.2
−0.1
0.5
±
0.1
5.5
+
0.3
−0.1
(1)
(2)
(3)
0.4±0.1
1.5±0.1
1.0±0.2
0.4
+0.1
−
0.05
0.75
0.9
0.65
±
0.1
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
0.55
±
0.1
2.3
±
0.2
2.3
±
0.2
1.0
±
0.2
Structure
Epitaxial planar type
PNP silicon transistor
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
(1) (2) (3)
Abbreviated symbol: BH
∗
2.5±0.2
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
2SB1326
6.8±0.2
0.65Max.
1.0
0.5±0.1
(1)
(2)
(3)
2.54 2.54
1.05
0.45±0.1
ROHM :
ATV
∗
Denotes h
FE
14.5±0.5
4.4±0.2
0.9
(1) Emitter
(2) Collector
(3) Base
Rev.A
2.5
1/4
9.5
±
0.5
4.0
±0.3
2.5
+0.2
−
0.1
0.9
1.5
2SB1386 / 2SB1412 / 2SB1326
Transistors
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
2SB1386
Collector power 2SB1412
dissipation
2SB1326
Junction temperature
Storage temperature
Tj
Tstg
P
C
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limits
−30
−20
−6
−5
−10
0.5
2
1
10
1
150
−55
to 150
Unit
V
V
V
A(DC)
A(Pulse)
∗
1
W
W
∗
2
W
W(Tc=25
°C
)
∗
3
W
°C
°C
∗
1
∗
2
∗
3
Single pulse, Pw=10ms
When mounted on a 40
×
40
×
0.7 mm ceramic board.
Printed circuit board glass epoxy board 1.6 mm thick with copper plating 100mm
2
or larger.
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Symbol
BV
CBO
Min.
−30
−20
−6
−
−
−
82
120
f
T
Cob
−
−
Typ.
−
−
−
−
−
0.35
−
−
120
60
Max.
−
−
−
−0.5
−0.5
−1.0
390
390
−
−
Unit
V
V
V
I
C
= −50µ
A
I
C
= −1mA
I
E
= −50µ
A
V
CB
= −20V
V
EB
= −5V
I
C
/I
B
= −4A/ −0.1A
V
CE
= −2V,
I
C
= −0.5A
V
CE
= −6V,
I
E
=50mA,
f=100MHz
V
CB
= −20V,
I
E
=0A,
f=1MHz
Conditions
Collector-emitter breakdown voltage BV
CEO
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
2SB1386,2SB1412
2SB1326
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
µ
A
µ
A
V
−
−
MHz
pF
∗
∗
∗
Transition frequency
Output capacitance
∗
Measured using pulse current.
Packaging specifications and h
FE
Package
Code
Type
2SB1386
2SB1412
2SB1326
h
FE
PQR
PQR
QR
−
−
−
Basic ordering
unit (pieces)
T100
1000
Taping
TL
2500
−
TV2
2500
−
−
h
FE
values are classified as follows :
Item
h
FE
P
82 to 180
Q
120 to 270
R
180 to 390
Rev.A
2/4
2SB1386 / 2SB1412 / 2SB1326
Transistors
Electrical characteristic curves
−10
−5
V
CE
=
−
2V
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
DC CURRENT GAIN : h
FE
−2
−1
−500m
−200m
−100m
−50m
−20m
−10m
−5m
−2m
−1m
Ta
=
100
°C
25
°C
−
25
°C
−5
−
50mA
−
45mA
−
40mA
−4
−
35mA
Ta=25
°C
mA
−
30
A
−
25m
−
20mA
5k
2k
1k
500
200
100
50
20
10
Ta=25
°C
−
15mA
−3
−
10mA
−2
V
CE
=
−5V
−
2V
−
1V
−
5mA
−1
I
B
=0A
0
−0.2
−0.4 −0.6 −0.8 −1.0 −1.2 −1.4
0
0
−0.4
−0.8
−1.2
−1.6
−2.0
5
−
1m
−
2m
−
5m
−
0.01
−
0.02
−
0.05
−
0.1
−
0.2
−
0.5
−
1
−
2
−
5
−
10
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(A)
Fig.1
Grounded emitter propagation
characteristics
Fig.2
Grounded emitter output
characteristics
Fig.3
DC current gain vs.
collector current ( )
V
CE
= −1V
DC CURRENT GAIN : h
FE
V
CE
= −2V
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
5k
2k
DC CURRENT GAIN : h
FE
5k
2k
1k
500
200
100
50
20
10
−5
−2
−1
−0.5
−0.2
−0.1
−0.05
−0.02
Ta=25°C
1k
500
200
100
50
20
10
−1m −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2
Ta
=
100
°C
25
°C
−
25
°C
Ta
=
100
°C
25
°C
−
25
°C
I
C
/I
B
=50/1
40/1
/1
30/1
10/1
5
−5 −10
−1m −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2
5
−5 −10
−0.01
−
2m
−
5m
−
0.0
−
-0.02
−
0.05
−
0.1
−
0.2
−
0.5
−
1
−
2
−
5
−
10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.4 DC current gain vs.
collector current ( )
Fig.5 DC current gain vs.
collector current ( )
Fig.6
Collector-emitter saturation
voltage vs. collector current ( )
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
l
C
/l
B
=10
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
−
5
−
2
−
1
−
0.5
−
0.2
−
0.1
−
0.05
−
0.02
−
5
−
2
−
1
−
0.5
−
0.2
−
0.1
−
0.05
−
0.02
l
C
/l
B
=30
−
5
−
2
−
1
−
0.5
−
0.2
−
0.1
−
0.05
−
0.02
l
C
/l
B
=40
−25°C
25
°C
Ta
=
100
°C
25
°C
Ta
=
100
°C
25
°C
−25°C
−25°C
Ta
=
100
°C
−
0.01
−
2m
−
5m
−
0.01
−
0.02
−
0.05
−
0.1
−
0.2
−
0.5
−
1
−
2
COLLECTOR CURRENT : I
C
(A)
−
5
−
10
−
0.01
−
2m
−
5m
−
0.01
−
0.02
−
0.05
−
0.1
−
0.2
−
0.5
−
1
−
2
COLLECTOR CURRENT : I
C
(A)
−
5
−
10
−
0.01
−
2m
−
5m
−
0.01
−
0.02
−
0.05
−
0.1
−
0.2
−
0.5
−
1
−
2
COLLECTOR CURRENT : I
C
(A)
−
5
−
10
Fig.7
Collector-emitter saturation
voltage vs. collector current ( )
Fig.8
Collector-emitter saturation
voltage vs. collector current (
)
Fig.9 Collector-emitter saturation
voltage vs. collector current (
)
Rev.A
3/4
2SB1386 / 2SB1412 / 2SB1326
Transistors
−
5
−
2
−
1
−
0.5
−
0.2
−
0.1
−
0.05
−
0.02
−
0.01
−
2m
−
5m
−
0.01
−
0.02
−
0.05
−
0.1
−
0.2
−
0.5
−
1
−
2
−
5
−
10
1 000
TRANSEITION FREQUENCY : f
T
(MHz)
1000
500
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
l
C
/l
B
=50
−25°C
25
°C
Ta
=
100
°C
500
200
100
50
20
10
5
2
1
1
2
5
10
20
Ta
=
25°C
V
CE
= −6V
COLLECTOR OUTPUT CAPACITANCE : Cob
(pF)
Ta
=
25°C
f
=
1MHz
I
E
=
0A
200
100
50
20
10
−0.1 −0.2 −0.5 −1
50 100 200
500 1000
−2
−5 −10 −20
−50
COLLECTOR CURRENT : I
C
(A)
EMITTER CURRENT : I
E
(mA)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.10 Collector-emitter saturation
voltage vs. collector current ( )
Fig.11
Gain bandwidth product
vs. emitter current
Fig.12 Collector output capacitance
vs. collector-base voltage
EMITTER INTPUT CAPACITANCE : Cib
(pF)
1000
500
COLLECTOR CURRENT : I
C
(A)
Ta
=
25°C
f
=
1MHz
I
C
=
0A
100
50
20
10
Ta=25°C
Single
nonrepetitive
pulse
∗
Pw
200
100
50
5
2
1
500m
200m
100m
50m
20m
10m
DC
=
1
Pw
s
0m
=
1
ms
00
20
10
−0.1
−0.2
−0.5
−1
−2
−5
−10
0.2 0.5 1
2
5 10 20 50 100 200 500
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR TO EMITTER VOLTAGE :
−V
CE
(V)
Fig.13 Emitter input capacitance
vs. emitter-base voltage
Fig.14 Safe operation area
F(2SB1412)
Rev.A
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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