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2SA1647-ZM-AZ

产品描述TRANSISTOR,BJT,PNP,100V V(BR)CEO,5A I(C),TO-252
产品类别分立半导体    晶体管   
文件大小301KB,共5页
制造商Renesas(瑞萨电子)
官网地址https://www.renesas.com/
标准
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2SA1647-ZM-AZ概述

TRANSISTOR,BJT,PNP,100V V(BR)CEO,5A I(C),TO-252

2SA1647-ZM-AZ规格参数

参数名称属性值
是否Rohs认证符合
Reach Compliance Codecompli
最大集电极电流 (IC)5 A
配置Single
最小直流电流增益 (hFE)100
最高工作温度150 °C
极性/信道类型PNP
最大功率耗散 (Abs)18 W
表面贴装YES
Base Number Matches1

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DATA SHEET
SILICON POWER TRANSISTOR
2SA1647,1647-Z
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DESCRIPTION
The 2SA1647 is a mold power transistor developed for high-speed
1.5
−0.1
+0.2
PACKAGE DRAWINGS (Unit: mm)
6.5 ±0.2
5.0 ±0.2
1.6 ±0.2
switching and features a very low collector-to-emitter saturation
voltage.
This transistor is ideal for use in switching regulators, DC/DC
converters, motor drivers, solenoid drivers, and other low-voltage
power supply devices, as well as for high-current switching.
2.3 ±0.2
0.5 ±0.1
4
5.5 ±0.2
7.0 MIN.
13.7 MIN.
+0.2
1
2
3
FEATURES
• Available for high-current control in small dimension
• Z type is a lead processed product and is deal for mounting a
hybrid IC.
• Low collector saturation voltage:
V
CE(sat)1
=
−0.3
V MAX. (I
C
=
−3.0
A)
• Fast switching speed:
t
f
= 0.4
μ
s MAX. (I
C
=
−3.0
A)
• High DC current gain and excellent linearity
1.1 ±0.2
0.5
−0.1
2.3 2.3
0.75
0.5
−0.1
+0.2
TO-251 (MP-3)
5.0 ±0.2
4.4 ±0.2
4
5.5 ±0.2
1.5
−0.1
+0.2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Base to emitter voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation (Tc = 25°C)
Total power dissipation (T
A
= 25°C)
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
Note 1
<R>
Unit
V
V
V
A
A
A
W
Note 3
6.5 ±0.2
2.3 ±0.2
0.5 ±0.1
Note
1.0 ±0.5
0.4 MIN.
0.5 TYP.
2.5 ±0.5
Ratings
−150
−100
−7.0
−5.0
−10
−2.5
18
1.0
Note 2
Note
5.6 ±0.3
9.5 ±0.5
1 2 3
0.5 ±0.1
0.5 ±0.1
2.3 ±0.3
2.3 ±0.3
0.15 ±0.15
I
B(DC)
P
T
P
T
T
j
T
stg
, 2.0
W
°C
°C
ELECTRODE CONNECTION
1.
TO-252 (MP-3Z)
2.
3.
4.
Base
Collector
Emitter
Collector Fin
150
−55
to +150
Notes 1.
PW
10 ms, Duty Cycle
50%
2.
Printing board mounted
<R>
3.
7.5 cm
2
×
0.7 mm ceramic board mounted
Note
The depth of notch at the top of the fin is
from 0 to 0.2 mm.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14839EJ5V0DS00 (5th edition)
Date Published June 2006 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2002

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2SA1647-ZM-AZ
描述 TRANSISTOR,BJT,PNP,100V V(BR)CEO,5A I(C),TO-252
是否Rohs认证 符合
Reach Compliance Code compli
最大集电极电流 (IC) 5 A
配置 Single
最小直流电流增益 (hFE) 100
最高工作温度 150 °C
极性/信道类型 PNP
最大功率耗散 (Abs) 18 W
表面贴装 YES
Base Number Matches 1
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