2SC5729
Transistor
Medium power transistor (30V, 0.5A)
2SC5729
!
Features
1) High speed switching. (Tf : Typ. : 50ns at I
C
= 500mA)
2) Low saturation voltage, typically
(Typ. : 150mV at I
C
= 100mA, I
B
= 10mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2047
!
External dimensions
(Units : mm)
(1)
0.65 0.65
UMT3
0.3
(3)
1.25
2.1
0.2
0.15
(2)
(1) Emitter
(2) Base
(3) Collector
0.1Min.
Each lead has same dimensions
Abbreviated symbol : UW
!Applications
Small signal low frequency amplifier
High speed switching
!
Structure
NPN Silicon epitaxial planar transistor
!
Packaging specifications
Package
Type
Code
Basic ordering unit
(pieces)
2SC5729
Taping
T106
3000
!
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperrature
Range of storage temperature
∗
1 Pw=10ms
∗
2 Each terminal mounted on a recommended land.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
30
30
6
0.5
1.0
200
150
−55~+150
Unit
V
V
V
A
A
mW
°C
°C
∗
1
∗
2
0.7
0.9
1.3
2.0
1/3
2SC5729
Transistor
!
Electrical characteristics
(Ta=25°C)
Parameter
Collector−base breakdown voltage
Symbol
BV
CEO
Min.
30
30
6
−
−
−
120
−
−
−
−
−
Typ.
−
−
−
−
−
150
−
300
5
40
120
50
Max.
−
−
−
1.0
1.0
300
390
−
−
−
−
−
Unit
V
V
V
µA
µA
mV
−
MHz
pF
ns
ns
ns
I
C
=100µA
I
C
=1mA
I
E
=100µA
V
CB
=20V
V
EB
=4V
I
C
=100mA,
I
B
=100mA
V
CE
=2V,
I
C
=50mA
V
CE
=10V,
I
E
=
−
100mA, f=1MHz
V
CB
=10V,
I
E
=0A,
f=1MHz
I
C
=500mA
I
B1
=50mA
I
B2
=
−
50mA
V
CC
~
25V
Conditions
Collector−emitter breakdown voltage BV
CBO
Emitter−base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector−emitter staturation voltage
DC current gain
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
fT
C
ob
T
on
T
stg
Tf
!
h
FE
RANK
Q
120-270
R
180-390
!
Electrical characteristic curves
10
Single non repoetitive pulse
1000
1000
Ta=25°C
V
CC
=25V
I
C
/I
B
=10/1
V
CE
=2V
COLLECTOR CURRENT : I
C
(A)
1ms
10ms
1
Ta=125°C
DC CURRENT GAIN : h
FE
100ms
0.1
SWITCHING TIME (ns)
Tstg
DC
100
100
Ta=25°C
Ta=−40°C
Tf
Ton
0.01
0.001
0.1
1
10
100
10
0.01
0.1
1
10
0.001
0.01
0.1
1
COLLECTOR EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.1 Safe operating area
1000
Fig.2 Switching Time
COLLECTOR SATURATION VOLTAGE : V
CE
(sat)
10
I
C
/I
B
=10/1
Fig.3 DC current gain vs. collector
current
10
Ta=25°C
DC CURRENT GAIN : h
FE
V
CE
=5V
COLLECTOR SATURATION
VOLTAGE : V
CE
(sat)
1
1
V
CE
=3V
100
I
C
/I
B
=100/1
V
CE
=2V
Ta=125°C
0.1
Ta=25°C
Ta=−40°C
0.1
I
C
/I
B
=20/1
I
C
/I
B
=10/1
0.01
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
0.01
0.001
0.01
0.1
1
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.4 DC current gain vs. collector
current
Fig.5 Collector-emitter saturation voltage Fig.6 Collector-emitter saturation voltage
vs. collector current
vs. collector current
2/3
2SC5729
Transistor
1000
I
C
/I
B
=10/1
1
V
CE
=2V
1000
TRANSITION FREQUENCY : f
T
(MHz)
BASE EMITTER SATURATION
VOLTAGE : V
BE
(sat)
Ta=25°C
V
CE
=10V
COLLECTOR CURRENT : I
C
(A)
Ta=−40°C
Ta=25°C
Ta=125°C
0.1
Ta=25°C
100
100
Ta=−40°C
Ta=125°C
10
0.001
0.01
0.01
0.1
1
0
0.5
1
1.5
2
10
−
0.001
−
0.01
−
0.1
−
1
COLLECTOR CURRENT : I
C
(A)
BASE TO EMITTER VOLTAGE : V
BE
(V)
EMITTER CURRENT : I
E
(A)
Fig.7 Base-emitter saturation voltage
vs. collector current
Fig.8 Ground emitter propagation
characteristics
Fig.9 Transition frequency
COLLECTOR OUTPUT CAPACITANCE : C
OB
(pF)
100
Ta=25°C
f=1MHz
10
1
0.1
1
10
100
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.10 Collector output capacitance
!
Switching characteristics measurement circuits
R
L
=50Ω
V
IN
I
B1
I
C
V
CC
25V
I
B2
1%
P
W
P
W
50 S
Duty cycle
I
B1
Base current
waveform
90%
Collector current
waveform
Ton
I
C
10%
Tstg Tf
I
B2
3/3
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