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TLE202x, TLE202xA, TLE202xB, TLE202xY
EXCALIBUR HIGH-SPEED LOW-POWER PRECISION
OPERATIONAL AMPLIFIERS
SLOS191D
−
FEBRUARY 1997
−
REVISED NOVEMBER 2010
D
D
D
D
D
D
Supply Current . . . 300
μA
Max
High Unity-Gain Bandwidth . . . 2 MHz Typ
High Slew Rate . . . 0.45 V/μs Min
Supply-Current Change Over Military Temp
Range . . . 10
μA
Typ at V
CC
±
=
±
15 V
Specified for Both 5-V Single-Supply and
±15-V
Operation
Phase-Reversal Protection
D
High Open-Loop Gain . . . 6.5 V/μV
D
D
D
D
(136 dB) Typ
Low Offset Voltage . . . 100
μV
Max
Offset Voltage Drift With Time
0.005
μV/mo
Typ
Low Input Bias Current . . . 50 nA Max
Low Noise Voltage . . . 19 nV/√Hz Typ
description
The TLE202x, TLE202xA, and TLE202xB devices are precision, high-speed, low-power operational amplifiers
using a new Texas Instruments Excalibur process. These devices combine the best features of the OP21 with
highly improved slew rate and unity-gain bandwidth.
The complementary bipolar Excalibur process utilizes isolated vertical pnp transistors that yield dramatic
improvement in unity-gain bandwidth and slew rate over similar devices.
The addition of a bias circuit in conjunction with this process results in extremely stable parameters with both
time and temperature. This means that a precision device remains a precision device even with changes in
temperature and over years of use.
This combination of excellent dc performance with a common-mode input voltage range that includes the
negative rail makes these devices the ideal choice for low-level signal conditioning applications in either
single-supply or split-supply configurations. In addition, these devices offer phase-reversal protection circuitry
that eliminates an unexpected change in output states when one of the inputs goes below the negative supply
rail.
A variety of available options includes small-outline and chip-carrier versions for high-density systems
applications.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized
for operation from
−
40°C to 85°C. The M-suffix devices are characterized for operation over the full military
temperature range of
−
55°C to 125°C.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright
©
2010, Texas Instruments Incorporated
POST OFFICE BOX 655303
•
DALLAS, TEXAS 75265
1
SLOS191D
−
FEBRUARY 1997
−
REVISED NOVEMBER 2010
TLE202x, TLE202xA, TLE202xB, TLE202xY
EXCALIBUR HIGH-SPEED LOW-POWER PRECISION
OPERATIONAL AMPLIFIERS
TLE2021 AVAILABLE OPTIONS
PACKAGED DEVICES
T
A
V
IO
max
AT 25°C
200
μV
500
μV
200
μV
500
μV
100
μV
V
500
μV
SMALL
OUTLINE
†
(D)
TLE2021ACD
TLE2021CD
TLE2021AID
TLE2021ID
—
TLE2021MD
SSOP
‡
(DB)
TLE2021CDBLE
CHIP
CARRIER
(FK)
—
CERAMIC DIP
(JG)
—
PLASTIC DIP
(P)
TLE2021ACP
TLE2021CP
TLE2021AIP
TLE2021IP
—
TLE2021MP
TSSOP
‡
(PW)
—
TLE2021CPWLE
—
CHIP
FORM
§
(Y)
—
TLE2021Y
—
0°C to
0C
70°C
−40°C
to
85°C
−55
C
−55°C
to
125°C
†
‡
—
—
TLE2021BMFK
TLE2021MFK
—
TLE2021BMJG
TLE2021MJG
—
—
—
The D packages are available taped and reeled. To order a taped and reeled part, add the suffix R (e.g., TLE2021CDR).
The DB and PW packages are only available left-end taped and reeled.
§
Chip forms are tested at 25°C only.
TLE2022 AVAILABLE OPTIONS
PACKAGED DEVICES
T
A
V
IO
max
AT 25°C
150
μV
300
μV
500
μV
150
μV
300
μV
500
μV
150
μV
300
μV
500
μV
SMALL
OUTLINE
†
(D)
TLE2022BCD
TLE2022ACD
TLE2022CD
TLE2022BID
TLE2022AID
TLE2022ID
—
TLE2022AMD
TLE2022MD
SSOP
‡
(DB)
—
—
TLE2022CDBLE
—
—
—
CHIP
CARRIER
(FK)
CERAMIC
DIP
(JG)
PLASTIC
DIP
(P)
—
TLE2022ACP
TLE2022CP
—
TLE2022AIP
TLE2022IP
—
TLE2022AMP
TLE2022MP
TSSOP
‡
(PW)
—
—
TLE2022CPWLE
—
CHIP
FORM
§
(Y)
—
—
TLE2022Y
—
0°C
to
70°C
−40°C
to
85°C
−55
C
−55°C
to
125°C
†
‡
—
—
TLE2022AMFK
TLE2022MFK
—
TLE2022BMJG
TLE2022AMJG
TLE2022MJG
—
—
—
The D packages are available taped and reeled. To order a taped and reeled part, add the suffix R (e.g., TLE2022CDR).
The DB and PW packages are only available left-end taped and reeled.
§
Chip forms are tested at 25°C only.
TLE2024 AVAILABLE OPTIONS
PACKAGED DEVICES
T
A
V
IO
max
AT 25°C
500
μV
750
μV
1000
μV
500
μV
750
μV
1000
μV
500
μV
750
μV
1000
μV
SMALL
OUTLINE
(DW)
TLE2024BCDW
TLE2024ACDW
TLE2024CDW
TLE2024BIDW
TLE2024AIDW
TLE2024IDW
TLE2024BMDW
TLE2024AMDW
TLE2024MDW
CHIP
CARRIER
(FK)
—
CERAMIC
DIP
(J)
—
PLASTIC
DIP
(N)
TLE2024BCN
TLE2024ACN
TLE2024CN
TLE2024BIN
TLE2024AIN
TLE2024IN
TLE2024BMN
TLE2024AMN
TLE2024MN
CHIP
FORM
§
(Y)
—
—
TLE2024Y
—
0C
0°C to 70
°
C
−40°C
to 85°C
40 C 85 C
—
TLE2024BMFK
TLE2024AMFK
TLE2024MFK
—
TLE2024BMJ
TLE2024AMJ
TLE2024MJ
−55°C
to 125°C
55 C 125 C
§
—
Chip forms are tested at 25°C only.
2
POST OFFICE BOX 655303
•
DALLAS, TEXAS 75265
TLE202x, TLE202xA, TLE202xB, TLE202xY
EXCALIBUR HIGH-SPEED LOW-POWER PRECISION
OPERATIONAL AMPLIFIERS
SLOS191D
−
FEBRUARY 1997
−
REVISED NOVEMBER 2010
TLE2021
D, DB, JG, P, OR PW PACKAGE
(TOP VIEW)
TLE2021
FK PACKAGE
(TOP VIEW)
OFFSET N1
IN−
IN+
V
CC
−
/GND
1
2
3
4
8
7
6
5
NC
V
CC+
OUT
OFFSET N2
NC
IN−
NC
IN+
NC
4
5
6
7
8
NC
OFFSET N1
NC
NC
NC
3 2 1 20 19
18
17
16
15
14
9 10 11 12 13
NC
−
No internal connection
NC
V
CC+
NC
OUT
NC
D, DB, JG, P, OR PW PACKAGE
(TOP VIEW)
1OUT
1IN−
1IN+
V
CC
−
/GND
1
2
3
4
8
7
6
5
V
CC+
2OUT
2IN−
2IN+
NC
1OUT
NC
VCC +
NC
NC
1IN
−
NC
1IN +
NC
4
5
6
7
8
3 2 1 20 19
18
17
16
15
14
9 10 11 12 13
NC
V CC−/ GND
NC
OFFSET N2
NC
FK PACKAGE
(TOP VIEW)
NC
−
No internal connection
NC
2OUT
NC
2IN
−
NC
DW PACKAGE
(TOP VIEW)
FK PACKAGE
(TOP VIEW)
1OUT
1IN
−
1IN +
V
CC +
2IN +
2IN
−
2OUT
NC
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
4OUT
4IN−
4IN +
V
CC
−
/GND
3IN +
3IN
−
3OUT
NC
1IN
−
1OUT
NC
4OUT
4IN
−
NC
V CC−/ GND
NC
2IN +
NC
J OR N PACKAGE
(TOP VIEW)
1IN +
NC
V
CC +
NC
2IN +
4
5
6
7
8
3 2 1 20 19
18
17
16
15
14
9 10 11 12 13
4IN +
NC
V
CC
−
/GND
NC
3IN +
1OUT
1IN
−
1IN +
V
CC +
2IN +
2IN
−
2OUT
1
2
3
4
5
6
7
14
13
12
11
10
9
8
4OUT
4IN
−
4IN +
V
CC
−
/GND
3IN +
3IN
−
3OUT
NC
−
No internal connection
2IN
−
2OUT
NC
3OUT
3IN
−
POST OFFICE BOX 655303
•
DALLAS, TEXAS 75265
3
SLOS191D
−
FEBRUARY 1997
−
REVISED NOVEMBER 2010
TLE202x, TLE202xA, TLE202xB, TLE202xY
EXCALIBUR HIGH-SPEED LOW-POWER PRECISION
OPERATIONAL AMPLIFIERS
TLE2021Y chip information
This chip, when properly assembled, display characteristics similar to the TLE2021. Thermal compression or
ultrasonic bonding may be used on the doped-aluminum bonding pads. This chip may be mounted with
conductive epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
(7)
(6)
(5)
OFFSET N1
IN +
IN
−
OFFSET N2
(1)
(3)
(2)
(5)
(4)
V
CC
−
/GND
+
−
V
CC+
(7)
(6)
OUT
78
CHIP THICKNESS: 15 MILS TYPICAL
BONDING PADS: 4
×
4 MILS MINIMUM
T
Jmax
= 150°C
TOLERANCES ARE
±
10%.
(4)
ALL DIMENSIONS ARE IN MILS.
PIN (4) IS INTERNALLY CONNECTED
TO BACKSIDE OF CHIP.
(2)
54
(3)
(1)
4
POST OFFICE BOX 655303
•
DALLAS, TEXAS 75265
微控制器 MCU
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