1K X 8 SPI BUS SERIAL EEPROM, PDSO8
1K × 8 总线串行电可擦除只读存储器, PDSO8
参数名称 | 属性值 |
是否Rohs认证 | 符合 |
厂商名称 | Atmel (Microchip) |
零件包装代码 | TSSOP |
包装说明 | TSSOP, TSSOP8,.25 |
针数 | 8 |
Reach Compliance Code | compli |
ECCN代码 | EAR99 |
最大时钟频率 (fCLK) | 5 MHz |
数据保留时间-最小值 | 100 |
耐久性 | 1000000 Write/Erase Cycles |
JESD-30 代码 | R-PDSO-G8 |
JESD-609代码 | e4 |
长度 | 4.4 mm |
内存密度 | 8192 bi |
内存集成电路类型 | EEPROM |
内存宽度 | 8 |
湿度敏感等级 | 3 |
功能数量 | 1 |
端子数量 | 8 |
字数 | 1024 words |
字数代码 | 1000 |
工作模式 | SYNCHRONOUS |
最高工作温度 | 85 °C |
最低工作温度 | -40 °C |
组织 | 1KX8 |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | TSSOP |
封装等效代码 | TSSOP8,.25 |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
并行/串行 | SERIAL |
峰值回流温度(摄氏度) | 250 |
电源 | 2/5 V |
认证状态 | Not Qualified |
座面最大高度 | 1.2 mm |
串行总线类型 | SPI |
最大待机电流 | 0.000006 A |
最大压摆率 | 0.01 mA |
最大供电电压 (Vsup) | 5.5 V |
最小供电电压 (Vsup) | 1.8 V |
标称供电电压 (Vsup) | 2.5 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | INDUSTRIAL |
端子面层 | Nickel/Palladium/Gold (Ni/Pd/Au) |
端子形式 | GULL WING |
端子节距 | 0.65 mm |
端子位置 | DUAL |
处于峰值回流温度下的最长时间 | 40 |
宽度 | 3 mm |
最长写入周期时间 (tWC) | 5 ms |
写保护 | HARDWARE/SOFTWARE |
AT25080B-XHL-B | AT25080B | AT25080B-MAHL-T | AT25080B-CUL-T | AT25160B | AT25080B_10 | AT25080B-MEHL-T | AT25080B-SSHL-T | |
---|---|---|---|---|---|---|---|---|
描述 | 1K X 8 SPI BUS SERIAL EEPROM, PDSO8 | 1K X 8 SPI BUS SERIAL EEPROM, PDSO8 | 1K X 8 SPI BUS SERIAL EEPROM, PDSO8 | 1K X 8 SPI BUS SERIAL EEPROM, PDSO8 | 1K X 8 SPI BUS SERIAL EEPROM, PDSO8 | 1K X 8 SPI BUS SERIAL EEPROM, PDSO8 | 1K X 8 SPI BUS SERIAL EEPROM, PDSO8 | 1K X 8 SPI BUS SERIAL EEPROM, PDSO8 |
内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
组织 | 1KX8 | 1K X 8 | 1KX8 | 1KX8 | 1K X 8 | 1K X 8 | 1KX8 | 1KX8 |
表面贴装 | YES | Yes | YES | YES | Yes | Yes | YES | YES |
温度等级 | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
端子形式 | GULL WING | NO LEAD | NO LEAD | BALL | NO LEAD | NO LEAD | NO LEAD | GULL WING |
端子位置 | DUAL | DUAL | DUAL | BOTTOM | DUAL | DUAL | DUAL | DUAL |
是否Rohs认证 | 符合 | - | 符合 | 符合 | - | - | 符合 | 符合 |
零件包装代码 | TSSOP | - | SON | BGA | - | - | DFN | SOIC |
包装说明 | TSSOP, TSSOP8,.25 | - | HVSON, SOLCC8,.11,20 | VFBGA, BGA8,2X4,40/20 | - | - | VSON, SOLCC8,.08,16 | SOP, SOP8,.25 |
针数 | 8 | - | 8 | 8 | - | - | 8 | 8 |
Reach Compliance Code | compli | - | compli | compli | - | - | compli | compli |
ECCN代码 | EAR99 | - | EAR99 | EAR99 | - | - | EAR99 | EAR99 |
最大时钟频率 (fCLK) | 5 MHz | - | 5 MHz | 5 MHz | - | - | 5 MHz | 5 MHz |
数据保留时间-最小值 | 100 | - | 100 | 100 | - | - | 100 | 100 |
耐久性 | 1000000 Write/Erase Cycles | - | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles | - | - | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles |
JESD-30 代码 | R-PDSO-G8 | - | R-PDSO-N8 | R-PBGA-B8 | - | - | R-XDSO-N8 | R-PDSO-G8 |
JESD-609代码 | e4 | - | e4 | e1 | - | - | e4 | e4 |
长度 | 4.4 mm | - | 3 mm | 2 mm | - | - | 2.2 mm | 4.925 mm |
内存密度 | 8192 bi | - | 8192 bi | 8192 bi | - | - | 8192 bi | 8192 bi |
内存集成电路类型 | EEPROM | - | EEPROM | EEPROM | - | - | EEPROM | EEPROM |
字数 | 1024 words | - | 1024 words | 1024 words | - | - | 1024 words | 1024 words |
字数代码 | 1000 | - | 1000 | 1000 | - | - | 1000 | 1000 |
工作模式 | SYNCHRONOUS | - | SYNCHRONOUS | SYNCHRONOUS | - | - | SYNCHRONOUS | SYNCHRONOUS |
最高工作温度 | 85 °C | - | 85 °C | 85 °C | - | - | 85 °C | 85 °C |
最低工作温度 | -40 °C | - | -40 °C | -40 °C | - | - | -40 °C | -40 °C |
封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | - | - | UNSPECIFIED | PLASTIC/EPOXY |
封装代码 | TSSOP | - | HVSON | VFBGA | - | - | VSON | SOP |
封装等效代码 | TSSOP8,.25 | - | SOLCC8,.11,20 | BGA8,2X4,40/20 | - | - | SOLCC8,.08,16 | SOP8,.25 |
封装形状 | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | - | - | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | - | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | - | - | SMALL OUTLINE, VERY THIN PROFILE | SMALL OUTLINE |
并行/串行 | SERIAL | - | SERIAL | SERIAL | - | - | SERIAL | SERIAL |
电源 | 2/5 V | - | 2/5 V | 2/5 V | - | - | 2/5 V | 2/5 V |
认证状态 | Not Qualified | - | Not Qualified | Not Qualified | - | - | Not Qualified | Not Qualified |
座面最大高度 | 1.2 mm | - | 0.6 mm | 0.85 mm | - | - | 0.4 mm | 1.75 mm |
串行总线类型 | SPI | - | SPI | SPI | - | - | SPI | SPI |
最大压摆率 | 0.01 mA | - | 0.01 mA | 0.01 mA | - | - | 0.01 mA | 0.01 mA |
最大供电电压 (Vsup) | 5.5 V | - | 5.5 V | 5.5 V | - | - | 5.5 V | 5.5 V |
最小供电电压 (Vsup) | 1.8 V | - | 1.8 V | 1.8 V | - | - | 1.8 V | 1.8 V |
标称供电电压 (Vsup) | 2.5 V | - | 2.5 V | 2.5 V | - | - | 2.5 V | 2.5 V |
技术 | CMOS | - | CMOS | CMOS | - | - | CMOS | CMOS |
端子面层 | Nickel/Palladium/Gold (Ni/Pd/Au) | - | NICKEL PALLADIUM GOLD | TIN SILVER COPPER | - | - | NICKEL PALLADIUM GOLD | Nickel/Palladium/Gold (Ni/Pd/Au) |
端子节距 | 0.65 mm | - | 0.5 mm | 0.5 mm | - | - | 0.4 mm | 1.27 mm |
宽度 | 3 mm | - | 2 mm | 1.5 mm | - | - | 1.8 mm | 3.9 mm |
最长写入周期时间 (tWC) | 5 ms | - | 5 ms | 5 ms | - | - | 5 ms | 5 ms |
写保护 | HARDWARE/SOFTWARE | - | HARDWARE/SOFTWARE | HARDWARE/SOFTWARE | - | - | HARDWARE/SOFTWARE | HARDWARE/SOFTWARE |
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