2SB1708
Transistors
Low frequency amplifier
2SB1708
!Application
Low frequency amplifier
Driver
!External
dimensions
(Units : mm)
2.8
1.6
0.95 0.95
(1)
1.9
0.4
(3)
!Features
1) A collector current is large. (3A)
2) V
CE(sat)
≤ −250mV
At I
C
=
−
1.5A / I
B
=
−
30mA
(2)
2.9
1.0MAX
0.85
0.16
0.3
0.6
0
0.1
Each lead has same dimensions
0.7
Abbreviated symbol : YY
ROHM : TSMT3
(1) Base
(2) Emitter
(3) Collector
!Absolute
maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
Collector-emitter voltage
V
EBO
Emitter-base voltage
I
C
Collector current
I
CP
P
C
Power dissipation
Junction temperature
Tj
Range of storage temperature
Tstg
∗Single
pulse, P
W
=1ms
!Packaging
specifications
Limits
−30
−30
−6
−3
−6
500
150
−55~+150
Unit
V
V
V
A
A
∗
mW
°C
°C
Package
Type
Code
Basic ordering unit (pieces)
2SB1708
Taping
T146
3000
Parameter
Collector-base voltage
!Electrical
characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗
Pulsed
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
−30
−30
−6
−
−
−
270
−
−
Typ.
−
−
−
−
−
−180
−
200
40
Max.
−
−
−
−100
−100
−250
680
−
−
Unit
V
V
V
nA
nA
mV
−
MHz
pF
Conditions
I
C
=−10µA
I
C
=−1mA
I
E
=−10µA
V
CB
=−30V
V
EB
=−6V
I
C
=−1.5A,
I
B
=−30mA
V
CE
=−2V,
I
C
=−200mA
∗
V
CE
=−2V,
I
E
=200mA,
f=100MHz
∗
V
CB
=−10V,
I
E
=0A,
f=1MHz
1/2
2SB1708
Transistors
!
Electrical characteristic curves
1000
DC CURRENT GAIN : h
FE
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
1
BASE SATURATION VOLTAGE : V
BE (sat)
(V)
I
C
/I
B
=20/1
Pulsed
Ta=125°C
Ta=25°C
Ta=−40°C
10
I
C
/I
B
=20/1
Pulsed
100
Ta=125°C
Ta=25°C
Ta=−40°C
0.1
1
Ta=−40°C
Ta=25°C
Ta=125°C
0.01
V
CE
=−2V
Pulsed
10
0.001
0.01
0.1
1
10
0.001
0.001
0.01
0.1
1
10
0.1
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.1 DC Current Gain vs.
Collector Current
Fig.2 Collector-Emitter Saturation Voltage
vs. Collector Current
Fig.3 Base-emitter saturation voltage
vs. Collector Current
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
COLLECTOR CURRENT : I
C
(A)
V
CE
=−2V
Pulsed
TRANSITION FREQUENCY : f
T
(MHz)
10
1000
Cib
100
Cob
1000
Ta=25°C
V
CE
=−2V
f=100MHz
1
Ta=125°C
Ta=25°C
Ta=−40°C
0.1
100
10
Ta
=
25°C
I
C
=
0A
f
=
1MHz
1
0.001
0.01
0.01
0.001
0.1
1
10
0.1
1
10
100
10
0.01
0.1
1
10
BASE TO EMITTER CURRENT : V
BE
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER CURRENT : I
E
(A)
Fig.4 Grounded Emitter
Propagation Characteristics
Fig.5 Collector Output Capacitance
vs. Collector-Base Voltage
Emitter Input Capacitance
vs. Emitter-Base Voltage
Fig.6 Gain Bandwidth Product
vs. Emitter Current
10000
SWITCHING TIME : (ns)
Ta=25°C
V
CE
=−12V
I
C
/I
B
=20/1
Pulsed
1000
100
tstg
10
0.01
0.1
1
tf
tdon
tr
10
COLLECTOR CURRENT : I
C
(A)
Fig.7 Switching Time
2/2
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