CMOS Static RAM
64K (8K x 8-Bit)
Features
High-speed address/chip select access time
– Military: 20/25/35/45/55/70/85/100ns (max.)
– Industrial: 25/35ns (max.)
– Commercial: 15/20/25/35ns (max.)
Low power consumption
Battery backup operation – 2V data retention voltage
(L Version only)
Produced with advanced CMOS high-performance
technology
Inputs and outputs directly TTL-compatible
Three-state outputs
Available in 28-pin DIP, CERDIP and SOJ
Military product compliant to MIL-STD-883, Class B
IDT7164S/LS
IDT7164L/LL
◆
Description
The IDT7164 is a 65,536 bit high-speed static RAM organized as 8K
x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS
technology.
Address access times as fast as 15ns are available and the circuit
offers a reduced power standby mode. When
CS
1
goes HIGH or CS
2
goes LOW, the circuit will automatically go to, and remain in, a low-
power stand by mode. The low-power (L) version also offers a battery
backup data retention capability at power supply levels as low as 2V.
All inputs and outputs of the IDT7164 are TTL-compatible and
operation is from a single 5V supply, simplifying system designs. Fully
static asynchronous circuitry is used, requiring no clocks or refreshing
for operation.
The IDT7164 is packaged in a 28-pin 300 mil DIP and SOJ and a 28-
pin 600 mil CERDIP.
Military grade product is manufactured in compliance with the latest
revision of MIL-STD-883, Class B, making it ideally suited to military
temperature applications demanding the highest level of performance
and reliability.
◆
◆
◆
◆
◆
◆
◆
Functional Block Diagram
A
0
V
CC
ADDRESS
DECODER
65,536 BIT
MEMORY ARRAY
GND
A
12
0
7
I/O
0
I/O CONTROL
I/O
7
CS
1
CS
2
OE
WE
CONTROL
LOGIC
2967 drw 01
FEBRUARY 2007
1
©2007 Integrated Device Technology, Inc.
DSC-2967/14
IDT7164S/L
CMOS Static RAM 64K (8K x 8-Bit)
Military, Commercial, and Industrial Temperature Ranges
Pin Configurations
NC
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
I/O
0
I/O
1
I/O
2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Absolute Maximum Ratings
(1)
V
CC
WE
CS
2
A
8
A
9
A
11
OE
A
10
CS
1
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
,
Symbol
V
TERM
(2)
Rating
Terminal Voltage
with Respect
to GND
Operating
Temperature
Temperature
Under Bias
Storage Temperature
Power Dissipation
DC Output Current
Com'l.
-0.5 to +7.0
Mil.
-0.5 to +7.0
Unit
V
D28-1
D28-3
P28-1
P28-2
SO28-5
T
A
T
BIAS
T
STG
P
T
I
OUT
0 to +70
-55 to +125
-55 to +125
1.0
50
-55 to +125
-65 to +135
-65 to +150
1.0
50
o
C
C
C
o
o
W
mA
2967 tbl 02
DIP/SOJ
Top View
2967 drw 02
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. V
TERM
must not exceed V
CC
+ 0.5V.
Pin Descriptions
Name
A
0
- A
12
I/O
0
- I/O
7
CS
1
CS
2
WE
OE
GND
V
CC
Description
Address
Data Input/Output
Chip Select
Chip Select
Truth Table
(1,2,3)
WE
X
X
X
X
CS
1
H
X
V
HC
X
L
L
L
CS
2
X
L
V
HC
or
V
LC
V
LC
H
H
H
OE
X
X
X
X
H
L
X
I/O
High-Z
High-Z
High-Z
High-Z
High-Z
DATA
OUT
DATA
IN
Function
Deselected - Standby (I
SB
)
Deselected - Standby (I
SB
)
Deselected - Standby (I
SB1
)
Deselected - Standby (I
SB1
)
Output Disabled
Read Data
Write Data
2967 tbl 03
Write Enable
Output Enable
Ground
Power
2967 tbl 01
H
H
L
NOTES:
1. CS
2
will power-down
CS
1
, but
CS
1
will not power-down CS
2
.
2. H = V
IH
, L = V
IL
, X = don't care.
3. V
LC
= 0.2V, V
HC
= V
CC
- 0.2V
Recommended DC Operating
Conditions
Symbol
V
CC
GND
V
IH
V
IL
Parameter
Supply Voltage
Ground
Input HIGH Voltage
Input LOW Voltage
Min.
4.5
0
2.2
-0.5
(1)
Typ.
5.0
0
____
Max.
5.5
0
V
CC
+ 0.5
0.8
Unit
V
V
Recommended Operating
Temperature and Supply Voltage
Grade
Military
Temperature
-55
O
C to +125
O
C
-40
O
C to +85
O
C
0
O
C to +70
O
C
GND
0V
0V
0V
Vcc
5V ± 10%
5V ± 10%
5V ± 10%
2967 tbl 04
V
Industrial
____
V
2967 tbl 05
Commercial
NOTE:
1. V
IL
(min.) = –1.5V for pulse width less than 10ns, once per cycle.
2
IDT7164S/L
CMOS Static RAM 64K (8K x 8-Bit)
Military, Commercial, and Industrial Temperature Ranges
Capacitance
(T
A
= +25°C, f = 1.0MHz)
Symbol
C
IN
C
I/O
Parameter
(1)
Input Capacitance
I/O Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
8
8
Unit
pF
pF
2967 tbl 06
NOTE:
1. This parameter is determined by device characterization, but is not production
tested.
DC Electrical Characteristics
(1)
(V
CC
= 5.0V ± 10%, V
LC
= 0.2V, V
HC
= V
CC
- 0.2V)
7164S15
7164L15
7164S20
7164L20
Com'l.
100
90
170
150
20
3
15
0.2
Ind.
110
100
170
150
20
3
15
0.2
Mil.
110
100
180
160
20
5
20
1
Com'l.
90
90
170
150
20
3
15
0.2
7164S25
7164L25
Ind.
110
100
170
150
20
3
15
0.2
Mil.
110
100
180
160
20
5
20
1
2967 tbl 07
Symbol
I
CC1
Parameter
Operating Power Supply Current
CS
1
= V
IL
, CS
2
= V
IH
, Outputs Open
V
CC
= Max., f
=
0
(2)
Dynamic Operating Current
CS
1
= V
IL
, CS
2
= V
IH
, Outputs Open
V
CC
= Max., f = f
MAX
(2)
Standby Power Supply Current
(TTL Level),
CS
1
> V
IH
, CS
2
< V
IL
,
Outputs Open, V
CC
= Max., f = f
MAX
(2)
Full Standby Power Supply Current
(CMOS Level), f = 0
(2)
, V
CC
= Max.
1.
CS
1
> V
HC
and CS
2
> V
HC
, or
2. CS
2
< V
LC
Power
S
L
S
L
S
L
S
L
Com'l.
110
100
180
150
20
3
15
0.2
Unit
mA
I
CC2
mA
I
SB
mA
I
SB1
mA
7164S35
7164L35
Symbol
I
CC1
Parameter
Operating Power Supply Current
CS
1
= V
IL
, CS
2
= V
IH
, Outputs Open
V
CC
= Max., f
=
0
(2)
Dynamic Operating Current
CS
1
= V
IL
, CS
2
= V
IH
, Outputs Open
V
CC
= Max., f = f
MAX
(2)
Standby Power Supply Current
(TTL Level),
CS
1
> V
IH
, CS
2
< V
IL
,
Outputs Open, V
CC
= Max., f = f
MAX
(2)
Full Standby Power Supply Current
(CMOS Level), f = 0
(2)
, V
CC
= Max.
1.
CS
1
> V
HC
and CS
2
> V
HC
, or
2. CS
2
< V
LC
Power Com'l.
S
L
S
L
S
L
S
L
90
90
150
130
20
3
15
0.2
Ind.
110
100
150
130
20
3
15
0.2
Mil.
100
90
160
140
20
5
20
1
7164S45
7164L45
Mil.
100
90
160
130
20
5
20
1
7164S55
7164L55
Mil.
100
90
160
125
20
5
20
1
7164S70
7164L70
Mil.
100
90
160
120
20
5
20
1
7164S85/100
7164L85/100
Mil.
100
90
160
120
20
5
20
1
2967 tbl 08
Unit
mA
I
CC2
mA
I
SB
mA
I
SB1
mA
NOTES:
1. All values are maximum guaranteed values.
2. f
MAX
= 1/t
RC
(all address inputs are cycling at f
MAX
); f = 0 means no address input lines are changing.
6.42
3
IDT7164S/L
CMOS Static RAM 64K (8K x 8-Bit)
Military, Commercial, and Industrial Temperature Ranges
DC Electrical Characteristics
Symbol
|I
LI
|
|I
LO
|
V
OL
Parameter
Input Leakage Current
Output Leakage Current
Output Low Voltage
(V
CC
= 5.0V ± 10%)
IDT7164S
IDT7164L
Min.
____
____
____
____
Test Conditions
V
CC
= Max.,
V
IN =
GND to V
CC
V
CC
= Max.,
CS
1
= V
IH
,
V
OUT
= GND to V
CC
I
OL
= 8mA, V
CC
= Min.
I
OL
= 10mA, V
CC
= Min.
MIL.
COM'L. & IND
MIL.
COM'L. & IND
Min.
____
____
____
____
Max.
10
5
10
5
0.4
0.5
____
Max.
5
2
5
2
0.4
0.5
____
Unit
µA
µA
V
____
____
____
____
V
OH
Output High Voltage
I
OH
= -4mA, V
CC
= Min.
2.4
2.4
V
2967 tbl 09
Data Retention Characteristics Over All Temperature Ranges
(L Version Only) (V
LC
= 0.2V, V
HC
= V
CC
- 0.2V)
Typ.
(1)
V
CC
@
Symbol
V
DR
I
CCDR
t
CDR
(3)
Parameter
V
CC
for Data Retention
Data Retention Current
Test Condition
____
Max.
V
CC
@
3.0V
____
Min.
2.0
____
____
2.0V
____
2.0V
____
3.0V
____
Unit
V
µA
ns
MIL.
COM'L. & IND
1.
CS
1
> V
HC
CS
2
> V
HC
, or
2. CS
2
< V
LC
10
10
____
15
15
____
200
60
____
300
90
____
Chip Deselect to Data
Retention Time
Operation Recovery Time
Input Leakage Current
0
t
R
(3)
t
RC
(2)
____
____
____
____
____
ns
µA
2967 tbl 10
I
I
LI
I
(3)
____
____
2
2
NOTES:
1. T
A
= +25°C.
2. t
RC
= Read Cycle Time.
3. This parameter is guaranteed by device characterization, but is not production tested.
AC Test Conditions
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
AC Test Load
GND to 3.0V
5ns
1.5V
1.5V
See Figures 1 and 2
2967 tbl 11
5V
480Ω
DATA
OUT
255Ω
30pF*
,
5V
480Ω
DATA
OUT
255Ω
5pF*
,
2967 drw 04
2967 drw 03
Figure 1. AC Test Load
Figure 2. AC Test Load
(for t
CLZ1,
t
CLZ2
, t
OLZ
, t
CHZ1,
t
CHZ2
, t
OHZ
, t
OW
, and t
WHZ
)
*Includes scope and jig capacitances
4
IDT7164S/L
CMOS Static RAM 64K (8K x 8-Bit)
Military, Commercial, and Industrial Temperature Ranges
AC Electrical Characteristics
(V
CC
= 5.0V ± 10%, All Temperature Ranges)
7164S15
(1)
7164L15
(1)
Symbol
Parameter
Min.
Max.
7164S20
(2)
7164L20
(2)
Min.
Max.
7164S25
7164L25
Min.
Max.
7164S35
7164L35
Min.
Max.
Unit
Read Cycle
t
RC
t
AA
t
ACS1
(3)
t
ACS2
(3)
t
CLZ1,2
(4)
t
OE
t
OLZ
(4)
t
CHZ1,2
(4)
t
OHZ
(4)
t
OH
t
PU
(4)
t
PD
(4)
Read Cycle Time
Address Access Time
Chip Select-1 Access Time
Chip Select-2 Access Time
Chip Select-1, 2 to Output in Low-Z
Output Enable to Output Valid
Output Enab le to Output in Low-Z
Chip Select-1,2 to Output in High-Z
Output Disab le to Output in High-Z
Output Hold from Address Change
Chip Sele ct to Power Up Time
Chip Deselect to Power Down Time
15
____
____
20
____
____
25
____
____
35
____
____
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
15
15
20
____
19
20
25
____
25
25
30
____
35
35
40
____
____
____
____
____
____
____
____
____
5
____
5
____
5
____
5
____
7
____
8
____
12
____
18
____
0
____
0
____
0
____
0
____
8
7
____
9
8
____
13
10
____
15
15
____
____
____
____
____
5
0
____
5
0
____
5
0
____
5
0
____
____
____
____
____
15
20
25
35
Write Cycle
t
WC
t
CW1,2
t
AW
t
AS
t
WP
t
WR1
t
WR2
t
WHZ
(4)
t
DW
t
DH1
t
DH2
t
OW
(4)
Write Cycle Time
Chip Select to End-of-Write
Address Valid to End-of-Write
Address Set-up Time
Write Pulse Width
Write Recovery Time (CS
1
,
WE)
Write Recovery Time (CS
2
)
Write Enab le to Output in High-Z
Data to Write Time Overlap
Data Hold from Write Time (CS
1
,
WE)
Data Hold from Write Time (CS
2
)
Output Active from End-of-Write
15
14
14
0
14
0
5
____
____
20
15
15
0
15
0
5
____
____
25
18
18
0
21
0
5
____
____
35
25
25
0
25
0
5
____
____
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2967 tbl 12
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
6
____
8
____
10
____
14
____
8
0
5
4
10
0
5
4
13
0
5
4
15
0
5
4
____
____
____
____
____
____
____
____
____
____
____
____
NOTES:
1. 0° to +70°C temperature range only.
2. 0° to +70°C and –55°C to +125°C temperature ranges only.
3. Both chip selects must be active for the device to be selected.
4. This parameter is guaranteed by device characterization, but is not production tested.
6.42
5
国产芯片交流
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
