Power Transistor Arrays
PUA3121
(PU3121)
Silicon NPN triple diffusion planar type darlington
For power amplification
■
Features
•
Built-in zener diode (30 V) between collector and base
•
Small variation in withstand pressure
•
Large energy handling capability
•
High-speed switching
•
NPN 3 elements
20.2
±0.3
Unit: mm
4.0
±0.2
M
ain
Di
sc te
on na
tin nc
ue e/
d
9.5
±0.2
1.65
±0.2
8.0
±0.2
Solder Dip
5.3
±0.5
4.4
±0.5
0.8
±0.25
Parameter
Symbol
V
CBO
V
CEO
I
C
V
EBO
I
CP
P
C
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
T
a
=
25°C
Junction temperature
Storage temperature
T
stg
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Symbol
V
CEO
I
CBO
I
EBO
h
FE1
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
/D
h
FE2 *1
ce
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE(sat)
V
BE(sat)
f
T
t
on
t
f
Transition frequency
Turn-on time
Storage time
Fall time
t
stg
Energy handling capability
*2
E
s/b
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Rank classification
*2: E
s/b
test circuit
X
Mercury relay
Rank
Free
P
Q
L
h
FE
1 000 to 10 000 2 000 to 10 000 1 000 to 5 000
Y
R
BE
Z
d
pla inc
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Rating
30±5
30±5
5
2
4
Unit
V
V
V
A
A
0.5
±0.15
7
×
2.57 = 17.78
±0.25
C 1.5
±0.5
■
Absolute Maximum Ratings
T
C
=
25°C
0.5
±0.15
1.0
±0.25
2.54
±0.2
15
W
2.4
1: Emitter
2: Base
3: Collector
4: Base
1 2 3 4 5 6 7 8
5: Collector
6: Base
7: Collector
8: Emitter
SIP8-A1 Package
150
°C
°C
−55
to
+150
Conditions
Min
25
Typ
Max
35
Unit
V
µA
V
V
I
C
=
5 mA, I
B
=
0
ue
V
CB
=
25 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
100
2
tin
mA
on
isc
V
CE
=
4 V, I
C
=
1 A
V
CE
=
4 V, I
C
=
2 A
I
C
=
2 A, I
B
=
8 mA
I
C
=
2 A, I
B
=
8 mA
I
C
=
2 A
1 000
1 000
10 000
2.5
2.5
Ma
int
en
an
V
CE
=
10 V, I
C
=
0.5 A, f
=
1 MHz
I
B1
=
8 mA, I
B2
= −8
mA
V
CC
=
20 V
20
MHz
µs
µs
µs
0.4
3.0
1.0
I
C
=
1.45 A, L
=
100 mH, R
BE
=
100
Ω
100
mJ
Note) The part numbers in the parenthesis show conventional part number.
Publication date: March 2004
SJK00011AED
1
Request for your special attention and precautions in using the technical information and
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(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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