V
RSM
= 90 V, I
F(AV)
= 2.0 A
Schottky Diode
SJPB-H9
Description
The SJPB-H9 is a 90 V, 2.0 A Schottky diode with
allowing improvements in V
F
and I
R
characteristics.
These characteristic features contribute to improving
power supply efficiency and to enabling high-frequency
systems.
Data Sheet
Package
SJP
Features
●
●
●
●
●
V
RSM
------------------------------------------------------ 90 V
I
F(AV)
------------------------------------------------------ 2.0 A
V
F
(I
F
= 2.0 A) ----------------------------------- 0.75 V typ.
Bare Lead Frame: Pb-free (RoHS Compliant)
Suitable for High Reliability and Automotive
Requirement
(1)
(2)
(1)
(2)
(1) Cathode
(2) Anode
Not to scale
Applications
The high speed switching applications as follows:
● DC-DC Converter
● Adapter
SJPB-H9-DSE Rev.1.0
SANKEN ELCTRIC CO., LTD.
Jun. 28, 2017
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016
1
SJPB-H9
Absolute Maximum Ratings
Unless otherwise specified, T
A
= 25 °C.
Parameter
Peak Repetitive Reverse Voltage
Repetitive Reverse Voltage
Average Forward Current
Surge Forward Current
I
2
t Limiting Value
Junction Temperature
Storage Temperature
Symbol
V
RSM
V
RM
I
F(AV)
I
FSM
I
2
t
T
J
T
STG
Rating
90
90
2.0
40
8.0
−40 to 150
−40 to 150
Unit
V
V
A
A
A
2
s
°C
°C
See Figure 1 and Figure 2
Half cycle sine wave,
positive side, 10 ms, 1 shot
1 ms ≤ t ≤ 10ms
Conditions
Electrical Characteristics
Unless otherwise specified, T
A
= 25 °C.
Parameter
Symbol
Forward Voltage Drop
Reverse Leakage Current
Reverse Leakage Current
Under High Temperature
Thermal Resistance
(1)
V
F
I
R
H∙I
R
R
th(J-L)
Conditions
I
F
= 2.0 A
V
R
= V
RM
V
R
= V
RM
, T
J
= 150 °C
Min.
—
—
—
—
Typ.
0.75
—
—
—
Max.
0.85
2
55
20
Unit
V
mA
mA
°C/W
(1)
R
th (J-L)
is thermal resistance between junction and lead.
2
SJPB-H9-DSE Rev.1.0
SANKEN ELCTRIC CO., LTD.
Jun. 28, 2017
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016
SJPB-H9
Rating and Characteristic Curves
2.0
2.0
DC
Average Forward Current, I
F(AV)
(A)
t/T = 1/2
Average Forward Current, I
F(AV)
(A)
DC
Sine wave
1.5
1.5
t/T = 1/2
1.0
t/T = 1/3, sine wave
t/T = 1/6
1.0
t/T = 1/3
t/T = 1/6
0.5
T
J
= 150 °C
t
T
0.5
T
J
= 150 °C
t
T
0.0
100
110
120
130
140
150
0.0
0
50
100
150
Case Temperature, T
C
(°C)
Figure 1. T
C
vs. I
F(AV)
Typical Characteristics
(V
R
= 0 V)
Figure 2.
Case Temperature, T
C
(°C)
T
C
vs. I
F(AV)
Typical Characteristics
(V
R
= 90 V)
1.E-01
10
1.E-02
Reverse Current, I
R
(A)
T
J
= 150 °C
T
J
= 150 °C
Forward Current, I
F
(A)
1
1.E-03
T
J
= 100 °C
1.E-04
0.1
1.E-05
T
J
= 100 °C
0.01
T
J
= 25 °C
1.E-06
T
J
= 25 °C
1.E-07
0
10
20
30
40
50
60
70
80
90
0.8
1.0
0.001
0.0
0.2
0.4
0.6
Reverse Voltage, V
R
(V)
Forward Voltage, V
F
(V)
Figure 3.
V
F
vs. I
F
Typical Characteristics
Figure 4.
V
R
vs. I
R
Typical Characteristics
SJPB-H9-DSE Rev.1.0
SANKEN ELCTRIC CO., LTD.
Jun. 28, 2017
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016
3
SJPB-H9
Physical Dimensions
●
SJP Package
4.5±0.2
2.6±0.2
+0.1
-0.2
2.15
1.3±0.4
2.0min.
5.0
-0.1
+0.4
1.3±0.4
1.5±0.2
NOTES:
- Dimensions in millimeters
- Bare lead frame: Pb-free (RoHS compliant)
- When soldering the products, be sure to minimize the working time, within the following limits:
Flow: 260 ± 5 °C / 10 ± 1 s, 2 times
Soldering Iron: 380 ± 10 °C / 3.5 ± 0.5 s, 1 time
- MSL: JEDEC LEVEL1
●
SJP Land Pattern Example
2.0
2.0
4.0 to 4.2
NOTE:
- Dimensions in millimeters
SJPB-H9-DSE Rev.1.0
SANKEN ELCTRIC CO., LTD.
Jun. 28, 2017
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016
0.05
+0.1
-0.05
4
SJPB-H9
Marking Diagram
Cathode Mark
Specific Device Code (See Table 1)
YMDD
Lot Number:
Y is the last digit of the year of manufacture (0 to 9)
M is the month of the year (1 to 9, O, N, or D)
DD is the day of the month (01 to 31)
Table 1. Specific Device Code
Specific Device Code
BH9
Part Number
SJPB-H9
SJPB-H9-DSE Rev.1.0
SANKEN ELCTRIC CO., LTD.
Jun. 28, 2017
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016
5
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