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SBL2030CT_2

产品描述20 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB
产品类别半导体    分立半导体   
文件大小96KB,共2页
制造商Diodes
官网地址http://www.diodes.com/
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SBL2030CT_2概述

20 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB

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SBL2030CT - SBL2060CT
20A SCHOTTKY BARRIER RECTIFIER
SPICE MODELS: SBL2030CT SBL2035CT SBL2040CT SBL2045CT SBL2050CT SBL2060CT
Features
·
·
·
·
·
·
·
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material: UL Flammability
Classification Rating 94V-0
TO-220AB
L
B
C
D
K
A
1
2
3
Dim
M
Min
14.22
9.65
2.54
5.84
¾
12.70
2.29
0.51
3.53Æ
3.56
1.14
0.30
2.03
Max
15.88
10.67
3.43
6.86
6.35
14.73
2.79
1.14
4.09Æ
4.83
1.40
0.64
2.92
A
B
C
D
E
G
H
E
G
J
N
Mechanical Data
·
·
·
·
·
·
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Weight: 2.24 grams (approx.)
Mounting Position: Any
Marking: Type Number
J
K
L
H H
Pin 1 +
Pin 2 -
Pin 3 +
+
Case
P
M
N
P
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@ T
C
= 95°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage Drop
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Operating and Storage Temperature Range
@ I
F
= 10A, T
C
= 25°C
@T
C
= 25°C
@ T
C
= 100°C
@ T
A
= 25°C unless otherwise specified
SBL
Symbol 2030CT
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
C
j
R
qJC
T
j,
T
STG
30
21
SBL
2035CT
35
24.5
SBL
2040CT
40
28
SBL
2045CT
45
31.5
SBL
2050CT
50
35
SBL
2060CT
60
42
Unit
V
V
A
A
20
250
0.55
1.0
50
650
2.8
-65 to +150
0.75
V
mA
pF
°C/W
°C
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V DC.
DS23015 Rev. F-2
1 of 2
www.diodes.com
SBL2030CT-SBL2060CT
ã
Diodes Incorporated

SBL2030CT_2相似产品对比

SBL2030CT_2 SBL2060CT
描述 20 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB 20 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB

 
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