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PR1006G

产品描述1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
产品类别半导体    分立半导体   
文件大小65KB,共3页
制造商Diodes
官网地址http://www.diodes.com/
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PR1006G概述

1 A, 800 V, SILICON, SIGNAL DIODE, DO-41

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PR1001G - PR1007G
1.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER
Features
Glass Passivated Die Construction
Fast Switching for High Efficiency
Surge Overload Rating to 30A Peak
Low Reverse Leakage Current
Lead Free Finish, RoHS Compliant (Note 4)
Mechanical Data
Case: DO-41 Plastic
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish - Tin. Plated Leads Solderable per MIL-STD-202,
Method 208
Polarity: Cathode Band
Marking: Type Number
Ordering Information: See Page 3
Weight: 0.35 grams (approximate)
Dim
DO-41 Plastic
Min
Max
A
25.40
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage (Note 5)
RMS Reverse Voltage
Average Rectified Output Current (Note 1) @ T
A
= 55°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Forward Voltage Drop @ I
F
= 1.0A
Peak Reverse Current @ T
A
= 25°C
at Rated DC Blocking Voltage (Note 5) @ T
A
= 100°C
Reverse Recovery Time (Note 3)
Typical Total Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
Notes:
1.
2.
3.
4.
5.
@T
A
= 25°C unless otherwise specified
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
t
rr
C
T
R
θ
JA
T
J,
T
STG
PR1001 PR1002 PR1003 PR1004 PR1005 PR1006 PR1007
Unit
G
G
G
G
G
G
G
50
35
100
70
200
140
400
280
1.0
30
1.3
5.0
50
150
15
95
-65 to +150
250
8
500
600
420
800
560
1000
700
V
V
A
A
V
μA
ns
pF
°C/W
°C
Valid provided that leads are maintained at ambient temperature at a distance of 9.5mm from the case.
Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
Measured with I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A. See figure 5.
EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.
Short duration pulse test used to minimize self-heating effect.
DS27001 Rev. 9 - 2
1 of 3
www.diodes.com
PR1001G - PR1007G
© Diodes Incorporated

PR1006G相似产品对比

PR1006G PR1001G_2 PR1001G PR1002G PR1003G PR1004G PR1005G PR1007G
描述 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41

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