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IDT703517S250RM

产品描述QDR SRAM, 256KX36, 0.45ns, PBGA576, 25 X 25 MM, 2.55 MM HEIGHT, 1 MM PITCH, ROHS COMPLIANT, FBGA-576
产品类别存储    存储   
文件大小874KB,共20页
制造商IDT (Integrated Device Technology)
标准  
下载文档 详细参数 选型对比 全文预览

IDT703517S250RM概述

QDR SRAM, 256KX36, 0.45ns, PBGA576, 25 X 25 MM, 2.55 MM HEIGHT, 1 MM PITCH, ROHS COMPLIANT, FBGA-576

IDT703517S250RM规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称IDT (Integrated Device Technology)
零件包装代码BGA
包装说明BGA,
针数576
Reach Compliance Codecompliant
ECCN代码3A991.B.2.A
最长访问时间0.45 ns
JESD-30 代码S-PBGA-B576
JESD-609代码e3
长度25 mm
内存密度9437184 bit
内存集成电路类型QDR SRAM
内存宽度36
功能数量1
端子数量576
字数262144 words
字数代码256000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织256KX36
封装主体材料PLASTIC/EPOXY
封装代码BGA
封装形状SQUARE
封装形式GRID ARRAY
并行/串行PARALLEL
峰值回流温度(摄氏度)260
认证状态Not Qualified
座面最大高度2.55 mm
最大供电电压 (Vsup)1.9 V
最小供电电压 (Vsup)1.7 V
标称供电电压 (Vsup)1.8 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层MATTE TIN
端子形式BALL
端子节距1 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间30
宽度25 mm

文档预览

下载PDF文档
512K/256K x36
SYNCHRONOUS
DUAL QDR-II
TM
®
PRELIMINARY DATASHET
IDT70P3537
IDT70P3517
Features
18Mb Density (512K x 36)
– Also available 9Mb Density
(256K x 36)
QDR-II x 36 Burst-of-2 Interface
– Commercial: 233MHz, 250MHz
Two independent ports
– True Dual-Port Access to common memory
Separate, Independent Read and Write Data Buses on each
Port
– Supports concurrent transactions
Two-Word Burst on all DPRAM accesses
DDR (Double Data Rate) Multiplexed Address Bus
– One Read and One Write request per clock cycle
DDR (Double Data Rate) Data Buses
– Four word burst data (Two Read and Two Write) per clock on
each port
– Four word transfers each of Read & Write per clock cycle per
port (four word bursts on 2 ports)
Octal Data Rate
Port Enable pins (E
0
,E
1
) for depth expansion
Dual Echo Clock Output with DLL-based phase alignment
High Speed Transceiver Logic inputs
– scaled to receive signals from 1.4V to 1.9V
Scalable output drivers
– Drives HSTL, 1.8V TTL or any voltage level from 1.4V to 1.9V
– Output impedance adjustable from 35 ohms to 70 ohms
1.8V Core Voltage (V
DD
)
576-ball Flip Chip BGA (25mm x 25mm, 1.0mm ball pitch)
JTAG Interface - IEEE 1149.1 Compliant
Functional Block Diagram
V
REFL
E
P[1:0]
E
L[1:0]
WRITE
REGISTER
WRITE
REGISTER
V
REFR
E
R[1:0]
D
0 L -
D
3 5 L
K
L
K
L
LEFT PORT
DATA
REGISTER
AND LOGIC
K
L
ZQ
L
(1)
Q
0 L -
Q
3 5 L
CQ
L
,
CQ
L
WRITE DRIVER
RIGHT PORT
DATA
REGISTER
AND LOGIC
K
R
SELECT OUTPUT
D
0 R -
D
3 5 R
K
R
K
R
OUTPUT REGISTER
OUTPUT REGISTER
OUTPUT BUFFER
OUTPUT BUFFER
SELECT OUTPUT
SENSE AMPS
SENSE AMPS
ZQ
R
(1)
Q
0 R -
Q
3 5 R
CQ
R
,
CQ
R
MUX
K
L
C
L
MUX
512/256K x 36
MEMORY
ARRAY
K
R
C
R
A
0L-
A
17L
(2)
R
L
W
L
BW
0 L -
BW
3 L
K
L
K
L
LEFT PORT
ADDRESS
REGISTER
AND LOGIC
C
L
,
C
L
OR
K
L
,
K
L
C
R
,
C
R
OR
K
R
,
K
R
ADDRESS DECODE
RIGHT PORT
ADDRESS
REGISTER
AND LOGIC
A
0R-
A
17R
(2)
R
R
W
R
BW
0 R -
BW
3 R
K
R
K
R
TDI
V
REF
L
TDO
JTAG
TCK
TMS
TRST
5677 drw01
V
REF
R
NOTES:
1. Input pin to adjust the device outputs to the system data bus impedance.
2. Address A
17
is a INC for IDT70P3517. Disabled input pin (Diode tied to V
DD
and V
SS
).
July 16, 2007
©2007
Integrated Device Technology, Inc. All rights reserved. Advanced Datasheet for informational purposes only. Product specifications subject to change without notice.
NOT AN OFFER FOR SALE
The information
presented herein is subject to a Non-Disclosure Agreement (NDA) and is for planning purposes only. Nothing contained in this presentation, whether verbal or written, is intended as, or shall have the effect of, a sale
or an offer for sale that creates a contractual power of acceptance. "QDR SRAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress Semicondor, IDT, and Micron Tecnology, Inc."
DSC-5677/1

IDT703517S250RM相似产品对比

IDT703517S250RM IDT703537S233RM IDT703537S250RM IDT703517S233RM
描述 QDR SRAM, 256KX36, 0.45ns, PBGA576, 25 X 25 MM, 2.55 MM HEIGHT, 1 MM PITCH, ROHS COMPLIANT, FBGA-576 QDR SRAM, 512KX36, 0.45ns, PBGA576, 25 X 25 MM, 2.55 MM HEIGHT, 1 MM PITCH, ROHS COMPLIANT, FBGA-576 QDR SRAM, 512KX36, 0.45ns, PBGA576, 25 X 25 MM, 2.55 MM HEIGHT, 1 MM PITCH, ROHS COMPLIANT, FBGA-576 QDR SRAM, 256KX36, 0.45ns, PBGA576, 25 X 25 MM, 2.55 MM HEIGHT, 1 MM PITCH, ROHS COMPLIANT, FBGA-576
是否无铅 不含铅 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合 符合
厂商名称 IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)
零件包装代码 BGA BGA BGA BGA
包装说明 BGA, BGA, BGA, BGA,
针数 576 576 576 576
Reach Compliance Code compliant compliant compliant compliant
ECCN代码 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
最长访问时间 0.45 ns 0.45 ns 0.45 ns 0.45 ns
JESD-30 代码 S-PBGA-B576 S-PBGA-B576 S-PBGA-B576 S-PBGA-B576
JESD-609代码 e3 e3 e3 e3
长度 25 mm 25 mm 25 mm 25 mm
内存密度 9437184 bit 18874368 bit 18874368 bit 9437184 bit
内存集成电路类型 QDR SRAM QDR SRAM QDR SRAM QDR SRAM
内存宽度 36 36 36 36
功能数量 1 1 1 1
端子数量 576 576 576 576
字数 262144 words 524288 words 524288 words 262144 words
字数代码 256000 512000 512000 256000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C
组织 256KX36 512KX36 512KX36 256KX36
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 BGA BGA BGA BGA
封装形状 SQUARE SQUARE SQUARE SQUARE
封装形式 GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) 260 260 260 260
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 2.55 mm 2.55 mm 2.55 mm 2.55 mm
最大供电电压 (Vsup) 1.9 V 1.9 V 1.9 V 1.9 V
最小供电电压 (Vsup) 1.7 V 1.7 V 1.7 V 1.7 V
标称供电电压 (Vsup) 1.8 V 1.8 V 1.8 V 1.8 V
表面贴装 YES YES YES YES
技术 CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 MATTE TIN MATTE TIN MATTE TIN MATTE TIN
端子形式 BALL BALL BALL BALL
端子节距 1 mm 1 mm 1 mm 1 mm
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM
处于峰值回流温度下的最长时间 30 30 30 30
宽度 25 mm 25 mm 25 mm 25 mm

 
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