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SMBJ22-W

产品描述Trans Voltage Suppressor Diode, 600W, Unidirectional, 1 Element, Silicon, DO-214AA, PLASTIC PACKAGE-2
产品类别分立半导体    二极管   
文件大小36KB,共5页
制造商Rectron
标准  
下载文档 详细参数 全文预览

SMBJ22-W概述

Trans Voltage Suppressor Diode, 600W, Unidirectional, 1 Element, Silicon, DO-214AA, PLASTIC PACKAGE-2

SMBJ22-W规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Rectron
零件包装代码DO-214AA
包装说明PLASTIC PACKAGE-2
针数2
Reach Compliance Codecompliant
ECCN代码EAR99
最大击穿电压29.8 V
最小击穿电压24.4 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-214AA
JESD-30 代码R-PDSO-C2
JESD-609代码e3
最大非重复峰值反向功率耗散600 W
元件数量1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)265
极性UNIDIRECTIONAL
最大功率耗散5 W
认证状态Not Qualified
表面贴装YES
技术AVALANCHE
端子面层Matte Tin (Sn)
端子形式C BEND
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED

文档预览

下载PDF文档
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
TVS
TFMBJ
SERIES
SURFACE MOUNT GPP
GPP TRANSIENT VOLTAGE SUPPRESSOR
600 WATT PEAK POWER 5.0 WATTS STEADY STATE
FEATURES
*
*
*
*
*
*
Plastic package has underwriters laboratory
Glass passivated chip construction
600 watt surage capability at 1ms
Excellent clamping capability
Low zener impedance
Fast response time
DO-214AA
0.083 (2.11)
0.077 (1.96)
0.180 (4.57)
0.160 (4.06)
0.155 (3.94)
0.130 (3.30)
Ratings at 25 C ambient temperature unless otherwise specified.
o
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
o
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
0.012 (0.305)
0.006 (0.152)
0.008 (0.203)
0.004 (0.102)
Dimensions in inches and (millimeters)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA suffix for types TFMBJ5.0 thru TFMBJ170
Electrical characteristics apply in both direction
MAXIMUM RATINGS
(At T
A
= 25 C unless otherwise noted)
RATINGS
Peak Power Dissipation with a 10/1000uS (Note 1,2, Fig.1)
Peak Pulse Current with a 10/1000uS waveform ( Note 1, Fig.3 )
Steady State Power Dissipation at T
L
= 75 C (Note 2)
Peak Forward Surge Current 8.3mS single half sine-wave
superimposed on rated load (JEDEC method) (Note 2,3)
unidirectional only
Maximum Instantaneous Forward Voltage at 50A for unidirectional
only (Note 3,4)
Operating and Storage Temperature Range
o
o
SYMBOL
P
PPM
I
PPM
P
M
(AV)
I
FSM
VALUE
Minimum 600
SEE TABLE 1
5.0
100
UNITS
Watts
Amps
Watts
Amps
V
F
T
J
, T
STG
SEE NOTE 4
-55 to + 150
Volts
0
C
2002-12
NOTES : 1. Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25
o
C per Fig.2.
2. Mounted on 0.2 X 0.2”( 5.0 X 5.0mm ) copper pad to each terminal.
3. Lead temperature at T
L
= 25
o
C
4. Measured on 8.3mS single half sine-wave duty cycle = 4 pules per minute maximum.
5. V
F
= 3.5V on TFMBJ-5.0 thru TFMBJ-90 devices and V
F
= 5.0V on TFMBJ-100 thru TFMBJ-170 devices.

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