PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
•
–6.3 A, –30 V. R
DS(ON)
= 0.032
Ω
@ V
GS
= -10 V
R
DS(ON)
= 0.05
Ω
@ V
GS
= -4.5 V
•
Low gate charge
•
Fast switching speed
•
High performance trench technology for extremely
low R
DS(ON)
•
High power and current handling capability
Applications
•
DC/DC converter
•
Load switch
•
Motor Drive
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
–30
±20
(Note 1a)
Units
V
V
A
W
-6.3
-40
2.5
1.2
1.0
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
4431
Device
Si4431DY
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
2001
Fairchild Semiconductor International
Si4431DY Rev A
Si4431DY
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= -250
µA
I
D
= -250
µA,
Referenced to 25°C
V
DS
= -24 V,
V
GS
= 20 V,
V
GS
= -20 V
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
Min
-30
Typ
Max Units
V
Off Characteristics
-22
-1
100
–100
mV/°C
µA
nA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= –250
µA
I
D
= –250
µA,
Referenced to 25°C
V
GS
= –10 V,
I
D
= –7.0 A
I
D
= –5.5 A
V
GS
= –4.5 V,
V
GS
= –10 V, I
D
= –7.0A, T
J
=125°C
V
GS
= –10 V,
V
DS
= –10 V,
V
DS
= –5 V
I
D
= –7.0 A
–1
–1.5
4
0.027
0.04
0.04
–3
V
mV/°C
0.032
0.05
0.54
Ω
I
D(on)
g
FS
–20
14.5
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= –15 V,
f = 1.0 MHz
V
GS
= 0 V,
930
278
114
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= –15 V,
V
GS
= –10 V,
I
D
= –1 A,
R
GEN
= 6
Ω
12
11
33
13
21
20
52
23
29
ns
ns
ns
ns
nC
nC
nC
V
DS
= –15 V,
V
GS
= –10 V
I
D
= –7.2 A,
18
2.5
4.1
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V
GS
= 0 V, I
S
= –2.1 A
Voltage
–2.1
(Note 2)
A
V
–0.76
–1.2
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
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