2SC4685
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC4685
Strobe Flash Applications
Medium Power Amplifier Applications
Unit: mm
•
•
•
High DC current gain: h
FE (1)
= 800 to 3200 (V
CE
= 2 V, I
C
= 0.5 A)
: h
FE (2)
= 250 (V
CE
= 2 V, I
C
= 4 A)
Low saturation voltage: V
CE (sat)
= 0.5 V (max) (I
C
= 4 A, I
B
= 40 mA)
High collector power dissipation: P
C
= 10 W (Tc = 25°C),
P
C
= 1.5 W (Ta = 25°C)
Maximum Ratings
(Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC
Collector current
Pulse
(Note)
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Ta = 25°C
Tc = 25°C
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
Rating
50
40
20
8
5
8
0.5
1.5
10
150
−55
to 150
A
Unit
V
V
V
JEDEC
JEITA
TOSHIBA
A
W
°C
°C
―
―
2-8H1A
Weight: 0.82 g (typ.)
Note: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
Electrical Characteristics
(Tc = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
V
(BR) CEO
h
FE (1)
h
FE (2)
V
CE (sat)
V
BE
f
T
C
ob
Test Condition
V
CB
= 50 V, I
E
= 0
V
EB
= 8 V, I
C
= 0
I
C
= 10 mA, I
B
= 0
V
CE
= 2 V, I
C
= 0.5 A
V
CE
= 2 V, I
C
= 4 A
I
C
= 4 A, I
B
= 40 mA
V
CE
= 2 V, I
C
= 4 A
V
CE
= 2 V, I
C
= 0.5 A
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Min
―
―
20
800
250
―
―
―
―
Typ.
―
―
―
―
―
―
―
150
45
Max
100
100
―
3200
―
0.5
1.2
―
―
V
V
MHz
pF
Unit
nA
nA
V
1
2004-07-26
2SC4685
I
C
– V
CE
10
Common emitter
8
50
40
30
20
10
6
5
4
2
2
IB = 0.5 mA
0
0
0
0
Ta = 25°C
8
Common emitter
VCE = 2 V
I
C
– V
BE
I
C
(A)
I
C
(A)
Collector current
6
Collector current
4
Ta = 125°C
2
25
−40
1
2
3
4
5
6
0.2
0.4
0.6
0.8
1.0
1.2
Collector-emitter voltage
V
CE
(V)
Base-emitter voltage
V
BE
(V)
h
FE
– I
C
10000
5
3 Common emitter
3000
Tc = 125°C
25
−40
V
CE (sat)
– I
C
Collector-emitter saturation voltage
V
CE (sat)
(V)
IC/IB = 200
1
h
FE
1000
DC current gain
0.3
300
0.1
Tc = 125°C
100
0.03
−40
0.01
0.01
25
30
Common emitter
VCE = 2 V
10
0.01
0.03
0.1
0.3
1
3
10
0.03
0.1
0.3
1
3
10
Collector current I
C
(A)
Collector current I
C
(A)
Safe Operating Area
10
IC max (pulsed)**
IC max (continuous)
V
BE (sat)
– I
C
10
5
Common emitter
IC/IB = 200
3
V
BE (sat)
(V)
10 ms*
100 ms*
Base-emitter saturation voltage
Collector current
1
25
0.3
Tc =
−40°C
I
C
(A)
3
1
125
DC operation
Tc = 25°C
0.5
*:
Single nonrepetitive pulse
0.1
Tc = 25°C
0.3
**:
Pulse width = 10 ms (max)
Duty cycle = 30% (max)
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
VCEO max
10
30
50
0.03
0.01
0.01
0.03
0.1
0.3
1
3
10
0.1
1
3
5
Collector current I
C
(A)
Collector-emitter voltage
V
CE
(V)
3
2004-07-26
2SC4685
RESTRICTIONS ON PRODUCT USE
•
The information contained herein is subject to change without notice.
030619EAA
•
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
•
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
•
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
•
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
4
2004-07-26
微控制器 MCU
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