2SK3019T
N-Channel MOSFET
P b
Lead(Pb)-Free
1
2
3
FEATURES:
* Low on-resistance
* Fast switching speed
* Low voltage drive makes this device ideal for portable equipment
* Easily designed drive circuits
* Easy to parallel
1. GATE
2. SOURCE
3. DRAIN
SOT-523(SC-75)
Maximum Ratings
(T
A
=25°C unless otherwise specified)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Thermal Resistance, Junction-to-Ambient
Total Power Dissipation
Junction temperature Range
Storage Temperature Range
Symbol
V
DSS
V
GSS
I
D
R
θJA
P
D
T
j
Tstg
Values
30
±20
100
833
150
150
-55 to +150
Unit
V
V
mA
°C/W
mW
°C
°C
Device Marking
2SK3019T = KN
WEITRON
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2SK3019T
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
V
GS
=0V,I
D
=10µA
Gate-Threshold Voltage
V
DS
=3V, I
D
=100µA
Gate-Source Leakage Current
V
GS
=±20V, V
DS
=0V
Zero Gate Voltage Drain Current
V
GS
=0V, V
DS
=30V
Drain-Source On-Resistance
V
GS
=4V, I
D
=10mA
V
GS
=2.5V, I
D
=1mA
Forward Tranconductance
V
DS
=3V, I
D
=10mA
Input Capacitance
V
DS
=5V, V
GS
=0V, f=1MHz
Output Capacitance
V
DS
=5V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
V
DS
=5V, V
GS
=0V, f=1MHz
Symbol
V
DS
V
th(GS)
I
GSS
I
DSS
R
DS(on)
gfs
C
iss
C
oss
C
rss
Min
30
0.8
-
-
Typ
-
-
-
-
Max
-
1.5
±1
1
8
13
-
-
-
-
Unit
V
V
μA
µA
-
20
-
-
-
-
-
13
9
4
Ω
ms
pF
SWITCHING
Turn-on Time
V
DD
=5V, R
L
=500Ω, I
D
=10mA, V
GS
=5V, R
g
=10Ω
Rise Time
V
DD
=5V, R
L
=500Ω, I
D
=10mA, V
GS
=5V, R
g
=10Ω
V
DD
=5V, R
L
=500Ω, I
D
=10mA, V
GS
=5V, R
g
=10Ω
Fall Time
V
DD
=5V, R
L
=500Ω, I
D
=10mA, V
GS
=5V, R
g
=10Ω
T
t
r
T
D(on)
t
r
-
-
-
-
15
35
80
80
-
-
ns
-
-
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2SK3019T
Typical Characteristics
Output Characteristics
200
Transfer Characteristics
3.0V
200
T
a
=25
℃
Pulsed
4.0V
3.5V
V
DS
=3V
100
T
a
=25
℃
Pulsed
160
(mA)
(mA)
120
I
D
DRAIN CURRENT
2.5V
DRAIN CURRENT
I
D
2.0V
V
GS
=1.5V
30
10
80
40
3
0
0
1
2
3
4
5
1
0
1
2
3
4
DRAIN TO SOURCE VOLTAGE
V
DS
(V)
GATE TO SOURCE VOLTAGE
V
GS
(V)
R
DS(ON)
—— I
D
50
15
R
DS(ON)
——
V
GS
T
a
=25
℃
Pulsed
T
a
=25
℃
30
Pulsed
12
(
Ω
)
R
DS(ON)
R
DS(ON)
V
GS
=2.5V
V
GS
=4V
ON-RESISTANCE
(
Ω
)
10
9
6
ON-RESISTANCE
I
D
=100mA
3
3
I
D
=50mA
1
1
3
10
30
100
200
0
0
4
8
12
16
20
DRAIN CURRENT
I
D
(mA)
GATE TO SOURCE VOLTAGE
V
GS
(V)
I
S
—— V
SD
200
100
T
a
=25
℃
Pulsed
I
S
(mA)
SOURCE CURRENT
30
10
3
1
0.3
0.1
0.2
0.4
0.6
0.8
1.0
SOURCE TO DRAIN VOLTAGE
V
SD
(V)
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2SK3019T
SOT-523 Outline Dimensions
Unit:mm
A
SOT-523
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.30
0.70
1.45
-
0.15
0.80
1.40
0.00
0.70
0.37
0.10
Max
0.50
0.90
1.75
0.50
0.40
1.00
1.80
0.10
1.00
0.48
0.25
TOP VIEW
B
C
D
E
G
H
K
L
J
M
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