2SC3666
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3666
Audio Power Amplifier Applications
Unit: mm
•
•
High DC current gain: h
FE (1)
= 100 to 320
High power dissipation: P
C
= 1000 mW
Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
30
30
5
1
0.1
1000
150
−55
to 150
Unit
V
V
V
A
A
mW
°C
°C
JEDEC
JEITA
TOSHIBA
―
―
2-7D101A
Electrical Characteristics
(Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Symbol
I
CBO
I
EBO
V
(BR) CEO
h
FE (1)
DC current gain
(Note)
h
FE (2)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
V
CE (sat)
V
BE
f
T
C
ob
Test Condition
V
CB
= 30 V, I
E
= 0
V
EB
= 5 V, I
C
= 0
I
C
= 10 mA, I
B
= 0
V
CE
= 2 V, I
C
= 100 mA
V
CE
= 2 V, I
C
= 800 mA
I
C
= 800 mA, I
B
= 80 mA
V
CE
= 2 V, I
C
= 800 mA
V
CE
= 2 V, I
C
= 100 mA
V
CB
= 10 V, f = 1 MHz
Weight: 0.2 g (typ.)
Min
―
―
30
100
40
―
―
―
―
Typ.
―
―
―
―
―
―
0.9
150
13
Max
100
100
―
320
―
0.5
1.5
―
―
V
V
MHz
pF
Unit
nA
nA
V
Note: h
FE (1)
classification
O: 100 to 200, Y: 160 to 320
Marking
C3666
Part No. (or abbreviation code)
Lot No.
Characteristics
indicator
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2004-07-07
2SC3666
I
C
– V
CE
1200
Common emitter
1000
Ta = 25°C
1000
500
h
FE
– I
C
Common emitter
VCE = 2 V
Ta = 100°C
h
FE
5
4
9
8
(mA)
7
6
300
Collector current I
C
800
DC current gain
100
50
30
−25
25
600
3
400
2
IB = 1 mA
10
1
3
10
30
100
300
1000
200
Collector current
0
0
0
1
2
3
4
5
6
I
C
(mA)
Collector-emitter voltage
V
CE
(V)
V
CE (sat)
– I
C
1
1000
Common emitter
IC/IB = 10
500
300
I
C
– V
BE
Common emitter
VCE = 2 V
Collector-emitter saturation voltage
V
CE (sat)
(V)
0.5
0.3
Ta = 100°C
0.1
0.05
0.03
−25
25
(mA)
Collector current I
C
100
50
30
Ta = 100°C
25
−25
10
5
3
1000
0.01
1
3
10
30
100
300
Collector current
I
C
(mA)
)
1
0
0.4
0.8
1.2
1.6
2.0
Base-emitter voltage
V
BE
(V)
Safe Operating Area
5
P
C
– Ta
1.4
3
IC max (pulsed)*
IC max (continuous)
1 ms*
10 ms*
1
(W)
1.2
I
C
(A)
0.5
0.3
100 ms*
DC operation
Ta = 25°C
P
C
Collector power dissipation
1.0
0.8
0.6
0.4
0.2
0
0
Collector current
0.1
0.05
0.03
*: Single nonrepetitive pulse
0.01
Ta = 25°C
Curves must be derated linearly with
0.005 increase in temperature.
20
40
60
80
100
120
140
160
0.003
0.1
0.3
1
3
10
30
100
Ambient temperature
Ta
(°C)
Collector-emitter voltage
V
CE
(V)
2
2004-07-07
2SC3666
RESTRICTIONS ON PRODUCT USE
•
The information contained herein is subject to change without notice.
030619EAA
•
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
•
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
•
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
•
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
3
2004-07-07
嵌入式系统
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