2SC3671
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3671
Strobe Flash Applications
Medium Power Amplifier Applications
Unit: mm
•
High DC current gain and excellent h
FE
linearity
: h
FE
= 140 to 450 (V
CE
= 2 V, I
C
= 0.5 A)
: h
FE
= 70 (min) (V
CE
= 2 V, I
C
= 4 A)
•
•
Low saturation voltage: V
CE (sat)
= 1.0 V (max) (I
C
= 4 A, I
B
= 0.1 A)
High collector power dissipation
Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC
Collector current
Pulse
(Note 1)
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
Rating
50
40
20
8
5
8
0.5
1000
150
−55
to 150
A
Unit
V
V
V
JEDEC
JEITA
TOSHIBA
―
―
2-7D101A
A
mW
°C
°C
Weight: 0.2 g (typ.)
Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
Electrical Characteristics
(Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Symbol
I
CBO
I
EBO
V
CEO
V
EBO
h
FE (1)
DC current gain
(Note 2)
h
FE (2)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
V
CE (sat)
V
BE
f
T
C
ob
Test Condition
V
CB
= 40 V, I
E
= 0
V
EB
= 8 V, I
C
= 0
I
C
= 10 mA, I
B
= 0
I
E
= 1 mA, I
C
= 0
V
CE
= 2 V, I
C
= 0.5 A
V
CE
= 2 V, I
C
= 4 A
I
C
= 4 A, I
B
= 0.1 A
V
CE
= 2 V, I
C
= 4 A
V
CE
= 2 V, I
C
= 0.5 A
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Min
―
―
20
8
140
70
―
―
―
―
Typ.
―
―
―
―
―
―
―
―
100
40
Max
100
100
―
―
450
―
1.0
1.5
―
―
V
V
MHz
pF
Unit
nA
nA
V
V
Note 2: h
FE (1)
classification
A: 140 to 240, B: 200 to 330, C: 300 to 450
1
2004-07-07
2SC3671
I
C
– V
CE
8
200
150
Common emitter
Ta = 25°C
1000
500
300
Ta = 100°C
25
−25
100
50
30
h
FE
– I
C
I
C
(A)
70
50
4
30
20
2
IB = 10 mA
Collector current
DC current gain
6
100
h
FE
Common emitter
VCE = 2 V
10
0.01
0.03
0.1
0.3
1
3
10
0
0
0
1
2
3
4
5
Collector current I
C
(A)
Collector-emitter voltage
V
CE
(V)
V
CE (sat)
– I
C
Collector-emitter saturation voltage
V
CE (sat)
(V)
3
Common emitter
1
0.5
0.3
Ta = 100°C
IC/IB = 40
8
Common emitter
VCE = 2 V
I
C
– V
BE
I
C
(A)
Collector current
25
−25
6
4
Ta = 100°C
0.1
0.05
0.03
0.01
0.03
0.1
0.3
1
3
10
2
25
−25
Collector current I
C
(A)
0
0
0.4
0.8
1.2
1.6
2.0
Base-emitter voltage
V
BE
(V)
Safe Operating Area
30
10 IC max (pulsed)*
5
3
10 ms*
IC max
(continuous)
100 ms*
1
0.5
0.3
DC operation
Ta = 25°C
P
C
– Ta
1.2
(W)
Collector power dissipation
0.8
Collector current I
C
P
C
(A)
0.1
0.05
0.4
0.03
0
0
40
80
120
160
*:
Single nonrepetitive pulse
Ta = 25°C
0.01 Curves must be derated
linearly with increase in
0.005 temperature.
0.003
0.03
0.1
0.3
1
3
10
30
100
Ambient temperature
Ta
(°C)
Collector-emitter voltage
V
CE
(V)
3
2004-07-07
2SC3671
RESTRICTIONS ON PRODUCT USE
•
The information contained herein is subject to change without notice.
030619EAA
•
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
•
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
•
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
•
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
4
2004-07-07
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
