2SA2048
Transistor
Medium power transistor (
−
30V,
−1.0
A)
2SA2048
!
Features
1) High speed switching. (Tf : Typ. : 20ns at I
C
=
−
1.0A)
2) Low saturation voltage, typically
(Typ. :
−150mV
at I
C
=
−
500mA, I
B
=
−
50mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SC5730
!
External dimensions
(Units : mm)
TSMT3
1.9
0.95 0.95
(1)
2.8
1.6
0.4
(3)
(2)
2.9
1.0MAX
0.16
(1)Base
(2)Emitter
(3)Collector
0.1
Abbreviated symbol : UL
!Applications
Small signal low frequency amplifier
High speed switching
!
Structure
PNP Silicon epitaxial planar transistor
!
Packaging specifications
Package
Type
2SA2048
Code
Basic ordering unit (pieces)
Taping
TL
3000
!
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
V
CBO
V
CEO
V
EBO
I
C
Collector current
I
CP
P
C
Power dissipation
Tj
Junction temperature
Range of storage temperature Tstg
∗1
Pw=10ms
∗2
Each terminal mounted on a recommended land
Limits
−30
−30
−6
−1.0
−2.0
500
150
−55~+150
Unit
V
V
V
A
A
∗1
mW
∗2
°C
°C
0
0.3
0.6
Each lead has same dimensions
0.7
0.85
1/3
2SA2048
Transistor
!
Electrical characteristics
(Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
BV
CBO
−30
−
−
V I
C
= −100µA
Collector-base breakdown voltage
Collector-emitter breakdown voltage BV
CEO
−30
−
−
V I
C
= −1mA
Emitter-base breakdown voltage
BV
EBO
−6
−
−
V I
E
= −100µA
−
−
−1.0 µA
V
CB
= −20V
I
CBO
Collector cut-off current
I
EBO
−
−
−1.0 µA
V
EB
= −4V
Emitter cut-off current
−
−150 −300
mV I
C
= −500mA,
I
B
= −50mA
Collector-emitter saturation voltage V
CE (sat)
h
FE
V
CE
= −2V,
I
C
= −10mA
120
−
390
−
DC current gain
f
T
−
350
−
MHz V
CE
= −10V,
I
E
=100mA,
f=10MHz
Transition frequency
Collector output capacitance
Cob
−
10
−
pF V
CB
= −10V,
I
E
=0A,
f=1MHz
Ton
−
30
−
ns I
C
= −1.0A
Turn-on time
I
B1
= −0.1A
Tstg
−
100
−
ns I
B2
=0.1A
Storage time
Tf
−
20
−
ns V
CC
−25V
Fall time
!
h
FE
RANK
Q
120−270
R
180−390
!
Electrical characteristic curves
−10
1000
COLLECTOR CURRENT : I
C
(A)
−1
DC CURRENT GAIN : h
FE
SWITCHING TIME : (ns)
10ms
1ms
Ta=25°C
V
CC
= −25V
I
C
/I
B
=10/1
1000
V
CE
= −2V
100
Ta=125°C
Ta=25°C
Ta=
−40°C
10
Tstg
100
Tf
Ton
−0.1
100ms
DC
Single
non repetitive
Pulse
−0.01
−0.1
−1
−10
−100
10
−0.01
−0.1
−1
−10
1
−0.001
−0.01
−0.1
−1
−10
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.1 Safe Operating Area
Fig.2 Switching Time
Fig.3 DC Current Gain vs.
Collector Current (Ι)
1000
Ta=25°C
−10
I
C
/I
B
=10/1
−10
Ta=25°C
COLLECTOR SATURATION
VOLTAGE : V
CE (sat)
(V)
100
V
CE
= −5V
V
CE
= −3V
V
CE
= −2V
−1
Ta=125°C
Ta=25°C
Ta=
−40°C
−0.1
COLLECTOR SATURATION
VOLTAGE : V
CE (sat)
(V)
DC CURRENT GAIN : h
FE
−1
I
C
/I
B
=20/1
I
C
/I
B
=10/1
−0.1
10
1
−0.001
−0.01
−0.1
−1
−10
−0.01
−0.001
−0.01
−0.1
−1
−10
−0.01
−0.001
−0.01
−0.1
−1
−10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.4 DC Current Gain vs.
Collector Current (ΙΙ)
Fig.5 Collector-Emitter Saturation
Voltage vs.
Collector Current (Ι)
Fig.6 Collector-Emitter Saturation
Voltage vs.
Collector Current (ΙΙ)
2/3
2SA2048
Transistor
I
C
/I
B
=10/1
V
CE
=2V
TRANSITION FREQUENCY : fT (MHz)
−10
BASE EMITTER SATURATION
VOLTAGE : V
BE (sat)
(V)
−10
COLLECTOR CURRENT : I
C
(A)
1000
Ta=25°C
V
CE
= −10V
−1
Ta=125°C
Ta=25°C
−1
Ta=
−40°C
100
Ta=
−40°C
−0.1
Ta=25°C
Ta=125°C
−0.1
10
−0.01
−0.001
−0.01
−0.1
−1
−10
−0.01
0
−0.5
−1
−1.5
1
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
BASE TO EMITTER VOLTAGE : V
BE
(V)
EMITTER CURRENT : I
E
(A)
Fig.7 Base-Emitter Saturation
Voltage vs.Collecter Current
Fig.8 Grounded Emitter
Propagation Characteristics
Fig.9 Transition Frequency
100
COLLECTOR OUTPUT
CAPACITANCE : Cob (pF)
Ta=25°C
f=1MHz
10
1
−0.1
−1
−10
−100
BASE TO COLLECTOR VOLTAGE : V
CB
(V)
Fig.10 Collector Output Capacitance
!
Switching characteristics measurement circuits
R
L=
25Ω
V
IN
P
W
I
B1
I
C
V
CC
−25V
I
B2
P
W
50µs
DUTY CYCLE 1%
I
B2
I
B1
BASE CURRENT
WAVEFORM
90%
COLLECTOR CURRENT
WAVEFORM
I
C
10%
Ton
Tstg
Tf
3/3
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