Power Bipolar Transistor, 12A I(C), 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | CDIL[Continental Device India Pvt. Ltd.] |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | compliant |
| 外壳连接 | ISOLATED |
| 最大集电极电流 (IC) | 12 A |
| 配置 | SINGLE |
| 最小直流电流增益 (hFE) | 28 |
| JESD-30 代码 | R-PSFM-T3 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | PNP |
| 最大功率耗散 (Abs) | 90 W |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 30 MHz |
| CSA1301RF | BU908F | CSC3280F | TIP141F | CSD1047F | |
|---|---|---|---|---|---|
| 描述 | Power Bipolar Transistor, 12A I(C), 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin | Power Bipolar Transistor, 8A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin | Power Bipolar Transistor, 12A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin | Power Bipolar Transistor, 10A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, | Power Bipolar Transistor, 12A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 |
| 厂商名称 | CDIL[Continental Device India Pvt. Ltd.] | CDIL[Continental Device India Pvt. Ltd.] | CDIL[Continental Device India Pvt. Ltd.] | CDIL[Continental Device India Pvt. Ltd.] | CDIL[Continental Device India Pvt. Ltd.] |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant |
| 外壳连接 | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| 最大集电极电流 (IC) | 12 A | 8 A | 12 A | 10 A | 12 A |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | 3 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | PNP | NPN | NPN | NPN | NPN |
| 最大功率耗散 (Abs) | 90 W | 34 W | 90 W | 60 W | 90 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO | NO |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
| 最小直流电流增益 (hFE) | 28 | - | 28 | 500 | 20 |
| JESD-609代码 | e0 | e0 | e0 | - | e0 |
| 标称过渡频率 (fT) | 30 MHz | 7 MHz | 30 MHz | - | 15 MHz |
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