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CY62146ESL MoBL
4-Mbit (256K x 16) Static RAM
Features
■
■
■
Very high speed: 45 ns
Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V
Ultra low standby power
❐
Typical Standby current: 1
A
❐
Maximum Standby current: 7
A
Ultra low active power
❐
Typical active current: 2 mA at f = 1 MHz
Easy memory expansion with CE and OE features
Automatic power down when deselected
Complementary metal oxide semiconductor (CMOS) for
optimum speed and power
Available in Pb-free 44-pin thin small outline package (TSOP) II
package
applications such as cellular telephones. The device also has an
automatic power down feature that reduces power consumption
when addresses are not toggling. Placing the device into standby
mode reduces power consumption by more than 99% when
deselected (CE HIGH). The input and output pins (I/O
0
through
I/O
15
) are placed in a high impedance state when the device is
deselected (CE HIGH), the outputs are disabled (OE HIGH),
both Byte High Enable and Byte Low Enable are disabled (BHE,
BLE HIGH) or during a write operation (CE LOW and WE LOW).
To write to the device, take Chip Enable (CE) and Write Enable
(WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data
from I/O pins (I/O
0
through I/O
7
) is written into the location
specified on the address pins (A
0
through A
17
). If Byte High
Enable (BHE) is LOW, then data from I/O pins (I/O
8
through
I/O
15
) is written into the location specified on the address pins
(A
0
through A
17
).
To read from the device, take Chip Enable (CE) and Output
Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If
Byte Low Enable (BLE) is LOW, then data from the memory
location specified by the address pins appears on I/O
0
to I/O
7
. If
Byte High Enable (BHE) is LOW, then data from memory
appears on I/O
8
to I/O
15
. See the
“Truth Table” on page 11
for a
complete description of read and write modes.
■
■
■
■
■
Functional Description
The CY62146ESL is a high performance CMOS static RAM
organized as 256K words by 16 bits. This device features
advanced circuit design to provide ultra low active current. This
is ideal for providing More Battery Life (MoBL
) in portable
Logic Block Diagram
DATA IN DRIVERS
A
10
A
9
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
ROW DECODER
256K x 16
RAM Array
SENSE AMPS
I/O
0
–I/O
7
I/O
8
–I/O
15
COLUMN DECODER
BHE
WE
CE
OE
BLE
A
11
A
12
A
13
A
15
A
14
A
16
A
17
Cypress Semiconductor Corporation
Document #: 001-43142 Rev. *C
•
198 Champion Court
•
San Jose
,
CA 95134-1709
•
408-943-2600
Revised June 29, 2011
CY62146ESL MoBL
Contents
Pin Configuration ............................................................. 3
Product Portfolio .............................................................. 3
Maximum Ratings ............................................................. 4
Operating Range ............................................................... 4
Electrical Characteristics ................................................. 4
Capacitance ...................................................................... 5
Thermal Resistance .......................................................... 5
Data Retention Characteristics ....................................... 6
Switching Characteristics ................................................ 7
Switching Waveforms ...................................................... 8
Truth Table ...................................................................... 11
Package Diagram ............................................................ 12
Ordering Information ...................................................... 12
Acronyms ........................................................................ 13
Document Conventions ................................................. 13
Units of Measure ....................................................... 13
Document History Page ................................................. 14
Sales, Solutions, and Legal Information ...................... 15
Worldwide Sales and Design Support ....................... 15
Products .................................................................... 15
PSoC Solutions ......................................................... 15
Document #: 001-43142 Rev. *C
Page 2 of 15
CY62146ESL MoBL
Pin Configuration
Figure 1. 44-Pin TSOP II (Top View)
[1]
A
4
A
3
A
2
A
1
A
0
CE
I/O
0
I/O
1
I/O
2
I/O
3
V
CC
V
SS
I/O
4
I/O
5
I/O
6
I/O
7
WE
A
17
A
16
A
15
A
14
A
13
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A
5
A
6
A
7
OE
BHE
BLE
I/O
15
I/O
14
I/O
13
I/O
12
V
SS
V
CC
I/O
11
I/O
10
I/O
9
I/O
8
NC
A
8
A
9
A
10
A
11
A
12
Product Portfolio
Power Dissipation
Product
Range
V
CC
Range (V)
[2]
Speed
(ns)
Operating I
CC
, (mA)
f = 1MHz
Typ
[3]
CY62146ESL
Industrial
2.2 V–3.6 V and 4.5 V–5.5 V
45
2
Max
2.5
f = f
max
Typ
[3]
15
Max
20
Standby, I
SB2
(A)
Typ
[3]
1
Max
7
Notes
1. NC pins are not connected on the die.
2. Datasheet specifications are not guaranteed for V
CC
in the range of 3.6 V to 4.5 V
3. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= 3 V, and V
CC
= 5 V, T
A
= 25 °C.
Document #: 001-43142 Rev. *C
Page 3 of 15
CY62146ESL MoBL
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage temperature................................. –65 °C to +150 °C
Ambient temperature with
power applied ........................................... –55 °C to +125 °C
Supply voltage to ground potential .................–0.5 V to 6.0 V
DC voltage applied to outputs
in High-Z State
[4, 5]
.........................................–0.5 V to 6.0 V
DC input voltage
[4, 5]
.......................................–0.5 V to 6.0 V
Output current into outputs (LOW) .............................. 20 mA
Static discharge voltage............................................. >2001V
(MIL-STD-883, Method 3015)
Latch up current....................................................... >200 mA
Operating Range
Device
CY62146ESL
Range
Ambient
Temperature
V
CC
[6]
Industrial –40 °C to +85 °C 2.2 V–3.6 V,
and
4.5 V–5.5 V
Electrical Characteristics
Over the Operating Range
45 ns
Parameter
V
OH
Description
Output high voltage
2.2 < V
CC
< 2.7
2.7 < V
CC
< 3.6
4.5 < V
CC
< 5.5
V
OL
Output low voltage
2.2 < V
CC
< 2.7
2.7 < V
CC
< 3.6
4.5 < V
CC
< 5.5
V
IH
Input high voltage
2.2 < V
CC
< 2.7
2.7 < V
CC
< 3.6
4.5 < V
CC
< 5.5
V
IL
Input low voltage
2.2 < V
CC
< 2.7
2.7 < V
CC
< 3.6
4.5 < V
CC
< 5.5
I
IX
I
OZ
I
CC
I
SB1[8]
Input Leakage Current
V
CC
Operating Supply
Current
GND < V
I
< V
CC
f = f
max
= 1/t
RC
f = 1 MHz
V
CC
= V
CCmax
I
OUT
= 0 mA, CMOS levels
Output Leakage Current GND < V
O
< V
CC
, Output Disabled
Test Conditions
I
OH
= –0.1 mA
I
OH
= –1.0 mA
I
OH
= –1.0 mA
I
OL
= 0.1 mA
I
OL
= 2.1mA
I
OL
= 2.1mA
1.8
2.2
2.2
–0.3
–0.3
–0.5
–1
–1
15
2
1
Min
2.0
2.4
2.4
0.4
0.4
0.4
V
CC
+ 0.3
V
CC
+ 0.3
V
CC
+ 0.5
0.6
0.8
0.8
+1
+1
20
2.5
7
A
A
A
mA
V
V
V
Typ
[7]
Max
Unit
V
I
SB2[8]
Automatic CE Power
CE > V
CC
0.2
V, V
IN
> V
CC
– 0.2 V or V
IN
< 0.2 V,
down Current — CMOS f = f
max
(Address and Data Only), I/O
Inputs
f = 0 (OE, BHE, BLE and WE), V
CC
= V
CC(max)
Automatic CE Power
CE > V
CC
– 0.2 V, V
IN
> V
CC
– 0.2 V or V
IN
< 0.2 V,
down Current — CMOS f = 0, V
CC
= V
CC(max)
Inputs
1
7
A
Notes
4. V
IL
(min) = –2.0V for pulse durations less than 20 ns.
5. V
IH
(max) = V
CC
+ 0.75 V for pulse durations less than 20 ns.
6. Full Device AC operation assumes a 100
s
ramp time from 0 to V
CC
(min) and 200
s
wait time after V
CC
stabilization.
7. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= 3 V, and V
CC
= 5 V, T
A
= 25 °C.
8. Chip enable (CE) must be HIGH at CMOS level to meet the I
SB1
/ I
SB2
/ I
CCDR
spec. Other inputs can be left floating.
Document #: 001-43142 Rev. *C
Page 4 of 15
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