CY62128EV30 MoBL
®
Automotive
1-Mbit (128 K × 8) Static RAM
1-Mbit (128 K × 8) Static RAM
Features
■
■
Functional Description
The CY62128EV30 is a high performance CMOS static RAM
module organized as 128K words by 8 bits. This device features
advanced circuit design to provide ultra low active current. This
is ideal for providing More Battery Life™ (MoBL
®
) in portable
applications such as cellular telephones. The device also has an
automatic power-down feature that significantly reduces power
consumption when addresses are not toggling. Placing the
device in standby mode reduces power consumption by more
than 99 percent when deselected (CE
1
HIGH or CE
2
LOW). The
eight input and output pins (I/O
0
through I/O
7
) are placed in a
high-impedance state when the device is deselected (CE
1
HIGH
or CE
2
LOW), the outputs are disabled (OE HIGH), or a write
operation is in progress (CE
1
LOW and CE
2
HIGH and WE
LOW).
To write to the device, take Chip Enable (CE
1
LOW and CE
2
HIGH) and Write Enable (WE) inputs LOW. Data on the eight I/O
pins is then written into the location specified on the Address pin
(A
0
through A
16
).
To read from the device, take Chip Enable (CE
1
LOW and CE
2
HIGH) and Output Enable (OE) LOW while forcing Write Enable
(WE) HIGH. Under these conditions, the contents of the memory
location specified by the address pins appear on the I/O pins.
Very high-speed: 45 ns
Temperature ranges:
❐
Automotive-A: –40 °C to +85 °C
❐
Automotive-E: –40 °C to +125 °C
Wide voltage range: 2.2 V to 3.6 V
Pin compatible with CY62128DV30
Ultra low standby power
❐
Typical standby current: 1
A
❐
Maximum standby current: 4
A
Ultra low active power
❐
Typical active current: 1.3 mA at f = 1 MHz
Easy memory expansion with CE
1
, CE
2,
and OE features
Automatic power down when deselected
Complementary metal oxide semiconductor (CMOS) for
optimum speed and power
Offered in Pb-free 32-pin small outline integrated circuit (SOIC),
32-pin thin small outline package (TSOP) Type I, and 32-pin
STSOP packages
■
■
■
■
■
■
■
■
Logic Block Diagram
CE1
CE2
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
WE
OE
INPUT BUFFER
I/O 0
I/O 1
SENSE AMPS
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
ROW DECODER
128K x 8
ARRAY
COLUMN DECODER
POWER
DOWN
I/O 7
A12
A14
A13
A16
A15
Cypress Semiconductor Corporation
Document #: 001-65528 Rev. *B
•
198 Champion Court
•
San Jose
,
CA 95134-1709
•
408-943-2600
Revised March 6, 2012
CY62128EV30 MoBL
®
Automotive
Contents
Pin Configuration ............................................................. 3
Product Portfolio .............................................................. 3
Pin Definitions .................................................................. 4
Maximum Ratings ............................................................. 5
Operating Range ............................................................... 5
Electrical Characteristics ................................................. 5
Capacitance ...................................................................... 6
Thermal Resistance .......................................................... 6
AC Test Loads and Waveforms ....................................... 6
Data Retention Characteristics ....................................... 7
Data Retention Waveform ................................................ 7
Switching Characteristics ................................................ 8
Switching Waveforms ...................................................... 9
Truth Table ...................................................................... 11
Ordering Information ...................................................... 12
Ordering Code Definitions ......................................... 12
Package Diagrams .......................................................... 13
Acronyms ........................................................................ 16
Document Conventions ................................................. 16
Units of Measure ....................................................... 16
Document History Page ................................................. 17
Sales, Solutions, and Legal Information ...................... 18
Worldwide Sales and Design Support ....................... 18
Products .................................................................... 18
PSoC Solutions ......................................................... 18
Document #: 001-65528 Rev. *B
Page 2 of 18
CY62128EV30 MoBL
®
Automotive
Pin Configuration
Figure 1. 32-pin STSOP
[1]
A
11
A
9
A
8
A
13
WE
CE
2
A
15
V
CC
NC
A
16
A
14
A
12
A
7
A
6
A
5
A
4
25
26
26
27
28
29
30
31
32
1
2
3
4
5
6
7
8
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
OE
A
10
CE
1
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
GND
I/O
2
I/O
1
I/O
0
A
0
A
1
A
2
A
3
Figure 2. 32-pin TSOP I
[1]
A
11
A
9
A
8
A
13
WE
CE
2
A
15
V
CC
NC
A
16
A
14
A
12
A
7
A
6
A
5
A
4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A
10
CE
1
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
GND
I/O
2
I/O
1
I/O
0
A
0
A
1
A
2
A
3
Top View
(not to scale)
Top View
(not to scale)
Figure 3. 32-pin SOIC
[1]
Top View
NC
A
16
A
14
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
I/O
0
I/O
1
I/O
2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
CC
A
15
CE
2
WE
A
13
A
8
A
9
A
11
OE
A
10
CE
1
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
Product Portfolio
Power Dissipation
Product
Range
V
CC
Range (V)
Min
CY62128EV30LL
CY62128EV30LL
Automotive-A
Automotive-E
2.2
2.2
Typ
[2]
3.0
3.0
Max
3.6
3.6
45
55
Speed
(ns)
Typ
[2]
1.3
1.3
Operating I
CC
(mA)
f = 1 MHz
Max
2.0
4.0
f = f
max
Typ
[2]
11
11
Max
16
35
Standby I
SB2
(µA)
Typ
[2]
1
1
Max
4
30
Notes
1. NC pins are not connected on the die.
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ)
, T
A
= 25 °C.
Document #: 001-65528 Rev. *B
Page 3 of 18
CY62128EV30 MoBL
®
Automotive
Pin Definitions
I/O Type
Input
Input/output
Input/control
Input/control
Input/control
Input/control
Ground
A
0
–A
16
. Address inputs
I/O
0
–I/O
7
. Data lines. Used as input or output lines depending on operation.
WE.
Write Enable, Active LOW. When selected LOW, a WRITE is conducted. When selected HIGH, a READ is
conducted.
CE
1
. Chip Enable 1, Active LOW.
CE
2
. Chip Enable 2, Active HIGH.
OE.
Output Enable, Active LOW. Controls the direction of the I/O pins. When LOW, the I/O pins behave as outputs.
When de-asserted HIGH, I/O pins are tri-stated, and act as input data pins.
GND.
Ground for the device.
Description
Power supply
V
CC
. Power supply for the device.
Document #: 001-65528 Rev. *B
Page 4 of 18
CY62128EV30 MoBL
®
Automotive
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature with
power applied .......................................... –55 °C to +125 °C
Supply voltage to ground
potential .......................................–0.3 V to V
CC(max)
+ 0.3 V
DC voltage applied to outputs
in High Z state
[3, 4]
......................–0.3 V to V
CC(max)
+ 0.3 V
DC input voltage
[3, 4]
...................–0.3 V to V
CC(max)
+ 0.3 V
Output current into outputs (LOW) ............................. 20 mA
Static discharge voltage ......................................... > 2001 V
(MIL-STD-883, Method 3015)
Latch up current ..................................................... > 200 mA
Operating Range
Device
Range
Ambient
Temperature
V
CC
[5]
CY62128EV30LL Automotive-A –40 °C to +85 °C 2.2 V to
Automotive-E –40 °C to +125 °C 3.6 V
Electrical Characteristics
Over the Operating Range
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
I
SB1[7]
Description
Output HIGH voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input leakage current
V
CC
operating supply
current
Test Conditions
I
OH
= –0.1 mA, V
CC
< 2.70 V
I
OH
= –1.0 mA, V
CC
> 2.70 V
I
OL
= 0.1 mA
I
OL
= 2.1 mA, V
CC
> 2.70 V
V
CC
= 2.2 V to 2.7 V
V
CC
= 2.7 V to 3.6 V
V
CC
= 2.2 V to 2.7 V
V
CC
= 2.7 V to 3.6 V
GND < V
IN
< V
CC
f = f
max
= 1/t
RC
V
CC
= V
CCmax
I
OUT
= 0 mA
f = 1 MHz
CMOS levels
Output leakage current GND < V
O
< V
CC
, output disabled
45 ns (Auto-A)
Min Typ
[6]
2.0
2.4
–
–
1.8
2.2
–0.3
–0.3
–1
–1
–
–
–
–
–
–
–
–
–
–
–
–
–
11
1.3
1
Max
–
–
0.4
0.4
V
CC
+ 0.3 V
V
CC
+ 0.3 V
0.6
0.8
+1
+1
16
2.0
4
2.0
2.4
–
–
1.8
2.2
–0.3
–0.3
–4
–4
–
–
–
55 ns (Auto-E)
Min Typ
[6]
–
–
–
–
–
–
–
–
–
–
11
1.3
1
Max
–
–
0.4
0.4
V
CC
+ 0.3 V
V
CC
+ 0.3 V
0.6
0.8
+4
+4
35
4.0
35
Unit
V
V
V
V
V
V
V
V
A
A
mA
mA
A
CE
1
> V
CC
0.2
V, CE
2
< 0.2 V,
Automatic CE
power-down
V
IN
> V
CC
– 0.2 V, V
IN
< 0.2 V,
current — CMOS inputs f = f
max
(address and data only),
f = 0 (OE and WE), V
CC
= 3.60 V
Automatic CE
CE
1
> V
CC
– 0.2 V, CE
2
< 0.2 V,
power-down
V
IN
> V
CC
– 0.2 V or V
IN
< 0.2 V,
current — CMOS inputs f = 0, V
CC
= 3.60 V
I
SB2[7]
–
1
4
–
1
30
A
Notes
3. V
IL(min)
= –2.0 V for pulse durations less than 20 ns.
4. V
IH(max)
= V
CC
+ 0.75 V for pulse durations less than 20 ns.
5. Full device AC operation assumes a 100
s
ramp time from 0 to V
CC(min)
and 200
s
wait time after V
CC
stabilization.
6. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ)
, T
A
= 25 °C.
7. Chip enables (CE
1
and CE
2
) must be at CMOS level to meet the I
SB1
/ I
SB2
/ I
CCDR
spec. Other inputs can be left floating.
Document #: 001-65528 Rev. *B
Page 5 of 18
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