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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3109
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3109 is N-channel MOS FET device that
features a low on-state resistance and excellent
switching characteristics, and designed for high voltage
applications such as DC/DC converter.
ORDERING INFORMATION
PART NUMBER
2SK3109
2SK3109-S
2SK3109-ZJ
PACKAGE
TO-220AB (MP-25)
TO-262 (MP-25 Fin Cut)
TO-263 (MP-25ZJ)
FEATURES
•
Gate voltage rating ±30 V
•
Low on-state resistance
R
DS(on)
= 0.4
Ω
MAX. (V
GS
= 10 V, I
D
= 5.0 A)
•
Low input capacitance
C
iss
= 400 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
•
Avalanche capability rated
•
Built-in gate protection diode
•
Surface mount device available
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
200
±30
±10
±30
1.5
50
150
−55
to +150
10
35
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
C
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 100 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D13332EJ3V0DS00 (3rd edition)
Date Published March 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
1998, 2000
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