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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3107
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DESCRIPTION
The 2SK3107 is a switching device which can be driven directly by a
2.5 V power source.
The 2SK3107 has excellent switching characteristics, and is suitable for
use as a high-speed switching device in digital circuits.
1.6 ± 0.1
PACKAGE DRAWING (Unit: mm)
0.3
+0.1
–0
0.15
+0.1
–0.05
0.8 ± 0.1
3
0 to 0.1
2
0.2
+0.1
–0
0.5
0.5
0.6
0.75 ± 0.05
1
FEATURES
•
Can be driven by a 2.5 V power source
•
Low gate cut-off voltage
ORDERING INFORMATION
PART NUMBER
2SK3107
PACKAGE
SC-75 (USM)
1.0
1.6 ± 0.1
1: Source
2: Gate
3: Drain
Marking: D1
EQUIVALENT CIRCUIT
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
30
±20
±0.1
±0.4
200
150
–55 to +150
V
V
A
A
mW
°C
°C
Gate
Protection
Diode
Gate
Drain
Body
Diode
Total Power Dissipation
Note2
Channel Temperature
Storage Temperature
Source
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on ceramic substrate of 3.0 cm x 0.64 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
2
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D13802EJ4V0DS00 (4th edition)
Date Published September 2006 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
1999
测试/测量
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