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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3105
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The 2SK3105 is a switching device which can be driven
directly by a 4 V power source.
The 2SK3105 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
PACKAGE DRAWING (Unit: mm)
0.4
+0.1
–0.05
0.16
+0.1
–0.06
0.65
–0.15
+0.1
2.8 ±0.2
3
1.5
0 to 0.1
1
2
FEATURES
•
Can be driven by a 4 V power source
•
Low on-state resistance
R
DS(on)1
= 95 mΩ MAX. (V
GS
= 10 V, I
D
= 1.5 A)
R
DS(on)2
= 135 mΩ MAX. (V
GS
= 4.5 V, I
D
= 1.5 A)
R
DS(on)3
= 150 mΩ MAX. (V
GS
= 4.0 V, I
D
= 1.5 A)
0.95
0.95
0.65
0.9 to 1.1
1.9
2.9 ±0.2
1 : Gate
2 : Source
3 : Drain
ORDERING INFORMATION
PART NUMBER
PACKAGE
SC-96 (Mini Mold Thin Type)
5
2SK3105
EQUIVALENT CIRCUIT
Drain
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
Note2
30
±20
±2.5
±10
0.2
1.25
150
–55 to +150
V
V
A
A
W
W
°C
°C
Gate
Body
Diode
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Mounted on FR-4 Board, t
≤
5 sec.
Remark
Gate
Protection
Diode
Marking: XA
Source
P
T2
T
ch
T
stg
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D13293EJ2V0DS00 (2nd edition)
Date Published May 2001 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
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