AH1888
MICROPOWER, GENERAL-SENSITIVE HALL EFFECT
SWITCH
Description
The AH1888 micro power Omni-polar Hall Effect switch IC
designed for portable and battery powered equipment such
as cellular phones, PDA’ s and portable PC’ s. Based on
two sensitive Hall Effect plates and chopper stabilized
architecture the AH1888 provides a reliable solution over the
whole operating range. To support portable and battery
powered equipment the design has been optimized to
operate over the supply range of 1.65V to 3.3V and
consumes only 12.6µW with a supply of 1.8V.
The outputs are switched with either a north or south pole of
sufficient strength. When the magnetic flux density (B) is
larger than operate point (Bop) the output is switched on. The
output is turned off when B becomes lower than the release
point (Brp). The output will remain off when there is no
magnetic field. The AH1888-ZG has two outputs, output one
pulls low when switched on and output two is inverted. The
AH1888-FJG provides output one and AH1888-FJRG
provides output two.
Pin Assignments
( Top View )
Output 2
GND
NC
1
2
3
SOT553
5
Output1
4
Vdd
(Top View)
3. GND
(Top View)
3. GND
1. Vdd
2. Output 1
1. Vdd
2. Output 2
U-DFN2020-3
U-DFN2020R-3
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Omni-polar (north or south pole) operation
Single or dual output options
Internal output pull up capability
Micropower operation
1.65V to 3.3V operating range
Chopper stabilized design provides
Superior temperature stability
Minimal switch point drift
Enhanced immunity to stress
Good RF noise immunity
-40°C to 85°C operating temperature
ESD (HBM)＞4KV for SOT553
ESD (HBM)＞5KV for U-DFN2020-3 and U-DFN2020R-3
Package: SOT553, U-DFN2020-3 and U-DFN2020R-3
Halogen and Antimony free “Green” device
Applications
•
•
•
•
•
Cellular phone
Portable PC and PDAs
Camcorders
Cordless phone
Contactless switch in consumer products
AH1888
Document number: DS31565 Rev. 8 - 2
1 of 11
www.diodes.com
February 2012
© Diodes Incorporated
AH1888
MICROPOWER, GENERAL-SENSITIVE HALL EFFECT
SWITCH
Typical Application Circuit
(1) SOT553
(2) U-DFN2020-3
(3) U-DFN2020R-3
Vdd
Vdd
Vdd
Output 1
AH1888
Output 2
GND
GND
AH1888
Output 1
AH1888
GND
Output 2
Pin Descriptions
Pin Name
Vdd
GND
Output 1
Output 2
P/I/O
P/I
P/I
O
O
Ground
Output Pin ( Active Low )
Output Pin ( Active High )
Description
Power Supply Voltage
AH1888
Document number: DS31565 Rev. 8 - 2
2 of 11
www.diodes.com
February 2012
© Diodes Incorporated
AH1888
MICROPOWER, GENERAL-SENSITIVE HALL EFFECT
SWITCH
Functional Block Diagram
(1) SOT553
Vdd
Sleep/Awake Logic
and Power Switch
Hall
Plate
Offset
Cancellation
Amp
Latch
Output
Driver
Controller
Output 1
GND
Vdd
Output 2
GND
Hall
Plate
Offset
Cancellation
Amp
Latch
(2) U-DFN2020-3
Vdd
Sleep/Awake Logic
and Power Switch
Hall
Plate
Offset
Cancellation
Amp
Latch
Output
Driver
Controller
Output 1
GND
Hall
Plate
Offset
Cancellation
Amp
Latch
(3) U-DFN2020R-3
Vdd
Sleep/Awake Logic
and Power Switch
Hall
Plate
Offset
Cancellation
Amp
Latch
Output
Driver
Controller
Output 2
GND
Hall
Plate
Offset
Cancellation
Amp
Latch
AH1888
Document number: DS31565 Rev. 8 - 2
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February 2012
© Diodes Incorporated
AH1888
MICROPOWER, GENERAL-SENSITIVE HALL EFFECT
SWITCH
Absolute Maximum Ratings
(T
A
= 25°C)
Symbol
Vdd
B
T
S
P
D
T
J
Supply voltage
Magnetic flux density
Storage Temperature Range
Package Power Dissipation
Maximum Junction Temperature
Characteristics
Values
5
Unlimited
-65 to +150
230
150
°C
mW
°C
Unit
V
Recommended Operating Conditions
(T
A
= 25°C)
Symbol
Vdd
T
A
Characteristic
Supply Voltage
Operating Temperature Range
Conditions
Operating
Operating
Rating
1.65 to 3.3
-40 to +85
Unit
V
°C
Electrical Characteristics
(T
A
= 25°C, Vdd = 1.8V, unless otherwise specified)
Symbol
V
OH
V
OL
Idd(en)
Idd(dis)
Idd(avg)
Tawake
Tperiod
D.C.
Notes:
Characteristic
Output On Voltage (High side)
Output On Voltage (Low side)
Supply Current
Awake Time
Period
Duty Cycle
Conditions
I
O
= -0.5mA
I
O
= 0.5mA
Chip enable
Chip disable
Average supply current
(Note 1)
(Note 1)
Min
Vdd - 0.2
-
-
-
-
-
-
-
Typ.
-
-
2
5
7
50
50
0.1
Max
-
0.2
4
8
12
100
100
-
Unit
V
V
mA
µA
µA
µs
ms
%
1. When power is initially turned on, Vdd must be within its correct operating range (1.65V to 3.3V) to guarantee the output sampling. The output state is
valid after the second operating cycle (typical 100ms).
AH1888
Document number: DS31565 Rev. 8 - 2
4 of 11
www.diodes.com
February 2012
© Diodes Incorporated
AH1888
MICROPOWER, GENERAL-SENSITIVE HALL EFFECT
SWITCH
Magnetic Characteristics
(T
A
= 25°C, Vdd = 1.8V ~ 3.0V, Note 2 & 3)
(1mT=10 Gauss)
Symbol
Bops(south pole to brand side)
Bopn(north pole to brand side)
Brps(south pole to brand side)
Brpn(north pole to brand side)
Bhy(
Bopx
−
Brpx
)
Notes:
Characteristic
Operate Point
Release Point
Hysteresis
Min
-
-79
35
-
3
Typ.
61
-61
53
-53
8
Max
79
-
-
-35
-
Unit
Gauss
2. Typical data is at Vdd = 3V.
3. The magnetic characteristics may vary with supply voltage, operating temperature and after soldering.
Output 1 ( Active Low )
( Output Voltage )
( Output Voltage )
Output 1 ( Active Low )
V
dd
Turn on
( off-state )
Turn off
( off-state )
Turn off
V
dd
B
hy
B
hy
Turn on
( on-state )
V
sat
S
N
V
sat
( on-state )
N
B
opn
B
rpn
0
( Magnetic flux density B )
0 B
rps
B
ops
( Magnetic flux density B )
S
Output 2 ( Active High )
( Output Voltage )
( Output Voltage )
Output 2 ( Active High )
V
dd
( off-state )
Turn off
( off-state )
Turn off
V
dd
Turn on
B
hy
B
hy
Turn on
( on-state )
V
sat
S
N
V
sat
( on-state )
N
B
opn
B
rpn
0
( Magnetic flux density B )
0 B
rps
B
ops
( Magnetic flux density B )
S
AH1888
Document number: DS31565 Rev. 8 - 2
5 of 11
www.diodes.com
February 2012
© Diodes Incorporated
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