2SC3515
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC3515
HIGH Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications
•
•
•
•
•
•
High voltage: V
CBO
= 300 V, V
CEO
= 300 V
Low saturation voltage: V
CE (sat)
= 0.5 V (max)
Small collector output capacitance: C
ob
= 3 pF (typ.)
Complementary to 2SA1384
Small flat package
P
C
= 1.0 to 2.0 W (mounted on a ceramic substrate)
Unit: mm
Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Collector power dissipation
P
C
(Note 1)
Junction temperature
Storage temperature range
T
j
T
stg
Rating
300
300
6
100
20
500
1000
150
−55
to 150
2
Unit
V
V
V
mA
mA
PW-MINI
JEDEC
JEITA
TOSHIBA
―
SC-62
2-5K1A
mW
Weight: 0.05 g (typ.)
°C
°C
Note 1: Mounted on a ceramic substrate (250 mm × 0.8 mmt)
1
2004-07-07
2SC3515
Electrical Characteristics
(Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Symbol
I
CBO
I
EBO
V
(BR) CBO
V
(BR) CEO
h
FE (1)
DC current gain
(Note 2)
h
FE (2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V
CE (sat)
V
BE (sat)
f
T
C
ob
Test Condition
V
CB
= 300 V, I
E
= 0
V
EB
= 6 V, I
C
= 0
I
C
= 0.1 mA, I
E
= 0
I
C
= 1 mA, I
B
= 0
V
CE
= 10 V, I
C
= 20 mA
V
CE
= 10 V, I
C
= 20 mA
I
C
= 20 mA, I
B
= 2 mA
I
C
= 20 mA, I
B
= 2 mA
V
CE
= 10 V, I
C
= 20 mA
V
CB
= 20 V, I
E
= 0, f = 1 MHz
Min
―
―
300
300
30
20
―
―
50
―
Typ.
―
―
―
―
―
―
―
―
80
3
Max
0.1
0.1
―
―
150
―
0.5
1.0
―
4
V
V
MHz
pF
Unit
µA
µA
V
V
―
Note 2: h
FE (1)
classification
R: 30 to 90, O: 50 to 150
Marking
Part No. (or abbreviation code)
I
Lot No.
Characteristics indicator
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2004-07-07
2SC3515
I
C
– V
CE
(low voltage region)
120
Common emitter
10
Ta
=
25°C
100
120
Common emitter
Ta
=
100°C
10
7
80
5
4
3
2
1
0.6
0.4
0.2
IB
=
0.1 mA
0
2
4
6
8
10
12
14
I
C
– V
CE
(low voltage region)
100
(mA)
Collector current I
C
2
60
1
0.8
0.6
0.5
0.4
0.3
20
0.2
IB
=
0.1 mA
0
0
2
4
6
8
10
12
0
14
Collector current I
C
(V)
80
3
(mA)
60
40
20
5
40
0
0
Collector-emitter voltage
V
CE
Collector-emitter voltage
V
CE
(V)
I
C
– V
CE
(low voltage region)
120
Common emitter
100
10
5
3
80
2
Ta
= −55°C
10
100
90
80
8
12
I
C
– V
CE
(low current region)
Common emitter
Ta
=
25°C
(mA)
(mA)
Collector current I
C
60
1
0.8
Collector current I
C
70
60
50
40
30
6
40
0.6
0.5
0.4
0.3
0.2
IB
=
0.1 mA
2
4
6
8
10
12
0
14
4
20
2
20
IB
=
10
µA
0
40
80
120
160
200
240
280
0
0
0
0
Collector-emitter voltage
V
CE
(V)
Collector-emitter voltage
V
CE
(V)
I
C
– V
CE
(low current region)
12
Common emitter
10
80
70
60
8
50
40
30
20
2
IB
=
10
µA
0
40
80
120
160
200
240
280
0
0
Ta
=
100°C
8
10
Common emitter
Ta
= −55°C
I
C
– V
CE
(low current region)
(mA)
(mA)
Collector current I
C
Collector current I
C
6
100
90
6
4
80
70
60
50
40
30
20
IB
=
10
µA
40
80
120
160
200
240
4
2
0
0
0
280
Collector-emitter voltage
V
CE
(V)
Collector-emitter voltage
V
CE
(V)
3
2004-07-07
2SC3515
h
FE
– I
C
500
300
Common emitter
Ta
=
25°C
VCE
=
10 V
500
300
h
FE
– I
C
Common emitter
VCE
=
10 V
Ta
=
100°C
100
50
30
25
−55
h
FE
100
50
30
1
DC current gain
5
10
5
3
0.1
0.3
1
3
10
30
100
DC current gain
h
FE
10
5
3
0.1
0.3
1
3
10
30
100
Collector current
I
C
(mA)
Collector current
I
C
(mA)
V
CE (sat)
– I
C
Collector-emitter saturation voltage
V
CE (sat)
(V)
3
10
V
BE (sat)
– I
C
Base-emitter saturation voltage
V
BE (sat)
(V)
Common emitter
IC/IB
=
10
5
3
Common emitter
IC/IB
=
10
1
0.5
0.3
Ta
=
100°C
1
0.5
0.3
Ta
= −55°C
0.1
0.05
0.03
0.1
0.3
1
25
−55
25
100
3
10
30
100
0.1
0.1
0.3
1
3
10
30
100
Collector current
I
C
(mA)
Collector current
I
C
(mA)
f
T
– I
C
500
(MHz)
Common emitter
300
Ta
=
25°C
Collector input capacitance C
ib
(pF)
Collector output capacitance C
ob
(pF)
C
ib
, C
ob
– V
R
300
f
=
1 MHz
100
50
30
Cib (IC = 0)
Ta
=
25°C
f
T
Transition frequency
100
50
30
VCE = 20 V
5
10
10
5
3
Cob (IE = 0)
10
0.3
1
3
10
30
1
0.1
0.3
1
3
10
30
100
300
Collector current
I
C
(mA)
Reverse voltage
V
R
(V)
4
2004-07-07
2SC3515
P
C
– Ta
1.2
500
(1)
(1) Mounted on ceramic substrate
2
(250 mm
×
0.8 mmt)
(2) No heat sink
0.8
300
Safe Operating Area
IC max (pulse)
IC max (continuous)
10 ms*
1 ms*
P
C
(W)
1.0
100
100 ms*
Collector power dissipation
(mA)
50
30
DC operation
Ta
=
25°C
10
5
3
0.6
0.4
0.2
Collector current I
C
20
40
60
80
100
120
140
160
(2)
0
0
1
*:
Single no repetitive pulse
0.5
0.3
Ta
=
25°C
Curves must be derated linearly
with increase in temperature VCEO max
Tested without a substrate.
3
10
30
100
300
1000
Ambient temperature
Ta
(°C)
0.1
1
Collector-emitter voltage
V
CE
(V)
5
2004-07-07
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