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2SC3265_03

产品描述Low Frequency Power Amplifier Applications Power Switching Applications
文件大小79KB,共3页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
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2SC3265_03概述

Low Frequency Power Amplifier Applications Power Switching Applications

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2SC3265
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3265
Low Frequency Power Amplifier Applications
Power Switching Applications
·
·
·
High DC current gain: h
FE (1)
= 100~320
Low saturation voltage: V
CE (sat)
= 0.4 V (max)
(I
C
= 500 mA, I
B
= 20 mA)
Complementary to 2SA1298
Unit: mm
Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
30
25
5
800
160
200
150
-55~150
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
TO-236MOD
SC-59
2-3F1A
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Symbol
I
CBO
I
EBO
V
(BR) CEO
V
(BR) EBO
h
FE (1)
DC current gain
(Note)
h
FE (2)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
V
CE (sat)
V
BE
f
T
C
ob
Test Condition
V
CB
=
30 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
I
C
=
10 mA, I
B
=
0
I
E
=
0.1 mA, I
C
=
0
V
CE
=
1 V, I
C
=
100 mA
V
CE
=
1 V, I
C
=
800 mA
I
C
=
500 mA, I
B
=
20 mA
V
CE
=
1 V, I
C
=
10 mA
V
CE
=
5 V, I
C
=
10 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
Weight: 0.012 g (typ.)
Min
¾
¾
25
5
100
40
¾
0.5
¾
¾
Typ.
¾
¾
¾
¾
¾
¾
¾
¾
120
13
Max
0.1
0.1
¾
¾
320
¾
0.4
0.8
¾
¾
V
V
MHz
pF
Unit
mA
mA
V
V
Note: h
FE (1)
classification
O: 100~200, Y: 160~320
Marking
1
2003-03-25

 
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