2SC2982
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2982
Storobo Flash Applications
Medium Power Amplifier Applications
•
High DC current gain and excellent linearity
: h
FE (1)
= 140 to 600 (V
CE
= 1 V, I
C
= 0.5 A)
: h
FE (2)
= 70 (min), 140 (typ.), (V
CE
= 1 V, I
C
= 2 A)
•
•
•
•
Low saturation voltage
: V
CE (sat)
= 0.5 V (max) (I
C
= 2 A, I
B
= 50 mA)
Small flat package
P
C
= 1.0 to 2.0 W (mounted on a ceramic substrate)
Complementary to 2SA1314
Unit: mm
Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse (Note 1)
DC
Pulse (Note 1)
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
C
Collector power dissipation
P
C
(Note 2)
Junction temperature
Storage temperature range
T
j
T
stg
Rating
30
30
10
6
2
4
0.4
0.8
500
1000
150
−55
to 150
mW
Unit
V
V
JEDEC
V
A
―
SC-62
2-5K1A
JEITA
TOSHIBA
Weight: 0.05 g (typ.)
A
Base current
°C
°C
Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
Note 2: 2SC2982 mounted on a ceramic substrate (250 mm × 0.8 t)
2
1
2004-07-07
2SC2982
Electrical Characteristics
(Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Symbol
I
CBO
I
EBO
V
(BR) CEO
V
(BR) EBO
h
FE (1)
DC current gain
(Note 3)
h
FE (2)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
V
CE (sat)
V
BE
f
T
C
ob
Test Condition
V
CB
= 30 V, I
E
= 0
V
EB
= 6 V, I
C
= 0
I
C
= 10 mA, I
B
= 0
I
E
= 1 mA, I
C
= 0
V
CE
= 1 V, I
C
= 0.5 A
V
CE
= 1 V, I
C
= 2 A
I
C
= 2 A, I
B
= 50 mA
V
CE
= 1 V, I
C
= 2 A
V
CE
= 1 V, I
C
= 0.5 A
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Min
―
―
10
6
140
70
―
―
―
―
Typ.
―
―
―
―
―
140
0.2
0.86
150
27
Max
0.1
0.1
―
―
600
―
0.5
1.5
―
―
V
V
MHz
pF
Unit
µA
µA
V
V
―
Note 3: h
FE (1)
classification
A: 140 to 240, B: 200 to 330, C: 300 to 450, D: 420 to 600
Marking
Part No. (or abbreviation code)
S
Lot No.
Characteristics indicator
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2004-07-07
2SC2982
I
C
– V
CE
4.0
60
25
15
3.0
10
2.0
IB
=
5 mA
Common emitter
Ta
=
25°C
500
1000
h
FE
– I
C
Ta
=
100°C
25
−25
I
C
(A)
Collector current
DC current gain
h
FE
300
100
50
30
Common emitter
1.0
0
0
0
1.0
2.0
3.0
4.0
10
0.01
0.03
0.1
0.3
1
VCE
=
1 V
3
10
Collector-emitter voltage
V
CE
(V)
Collector current I
C
(A)
V
CE (sat)
– I
C
1
Common emitter
4.0
IC/IB
=
40
I
C
– V
BE
Common emitter
VCE
=
1 V
3.2
Collector-emitter saturation voltage
V
CE (sat)
(V)
0.5
0.3
I
C
(A)
Collector current
2.4
0.1
0.05
0.03
Ta
=
100°C
1.6
25
−25
Ta
=
100°C
−25
25
0.8
0.01
0.01
0.03
0.1
0.3
1
3
10
0
0
0.4
0.8
1.2
1.6
2.0
Collector current I
C
(A)
Base-emitter voltage
V
BE
(V)
Safe Operating Area
10
5
3
IC max (pulse)*
1.4
P
C
– Ta
P
C
(W)
IC max (continuous)
100 ms*
10 ms*
(1) Mounted on a ceramic substrate
2
(250 mm
×
0.8 t)
(1)
(2) No heat sink
I
C
(A)
1.2
1.0
0.8
0.6
0.4
0.2
0
0
1
0.5
0.3
Collector power dissipation
DC operation
Ta
=
25°C
Collector current
0.1
(2)
*:
Single nonrepetitive pulse
Ta
=
25°C
Curves must be derated
linearly with increase in
temperature.
Tested without a substrate.
0.3
1
3
VCEO max
10
30
100
20
40
60
80
100
120
140
160
0.01
0.1
Collector-emitter voltage
V
CE
(V)
Ambient temperature
Ta
(°C)
3
2004-07-07
2SC2982
RESTRICTIONS ON PRODUCT USE
•
The information contained herein is subject to change without notice.
030619EAA
•
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
•
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
•
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
•
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
4
2004-07-07
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