MBR16Hxx, MBRF16Hxx & MBRB16Hxx Series
New Product
Vishay Semiconductors
formerly General Semiconductor
Reverse Voltage
35 to 60 V
Forward Current
16 A
Schottky Barrier Rectifiers
ITO-220AC (MBRF16Hxx)
TO-220AC (MBR16Hxx)
0.415 (10.54) MAX.
0.154 (3.91)
0.370 (9.40)
0.360 (9.14)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.410 (10.41)
0.390 (9.91)
PIN
1
0.160 (4.06)
0.140 (3.56)
2
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
CASE
0.405 (10.27)
0.383 (9.72)
0.185 (4.70)
0.175 (4.44)
0.188 (4.77)
0.172 (4.36)
0.110 (2.80)
0.100 (2.54)
0.140 (3.56)
DIA.
0.130 (3.30)
0.131 (3.39)
DIA.
0.122 (3.08)
DIA.
0.055 (1.39)
0.045 (1.14)
0.600 (15.5)
0.580 (14.5)
0.603 (15.32)
0.573 (14.55)
1
0.676 (17.2)
0.646 (16.4)
0.350 (8.89)
0.330 (8.38)
PIN
2
0.635 (16.13)
0.625 (15.87)
0.350 (8.89)
0.330 (8.38)
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.060 (1.52)
PIN 1
0.110 (2.80)
0.100 (2.54)
PIN 1
PIN 2
PIN 2
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.037 (0.94)
0.027 (0.68)
0.022 (0.56)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
0.037 (0.94)
0.027 (0.69)
0.022 (0.55)
0.014 (0.36)
TO-263AB (MBRB16Hxx)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN
K
0.055 (1.40)
0.047 (1.19)
1
K
2
0.624 (15.85)
0.591 (15.00)
0-0.01 (0-0.254)
0.110 (2.79)
0.090 (2.29)
0.027 (0.686)
0.037 (0.940)
0.105 (2.67)
0.095 (2.41)
PIN 1
PIN 2
K - HEATSINK
Mounting Pad Layout TO-263AB
0.42
(10.66)
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
0.33
(8.38)
0.63
(17.02)
Dimensions in inches
and (millimeters)
0.360 (9.14)
0.320 (8.13)
0.08
(2.032)
0.24
(6.096)
0.12
(3.05)
0.021 (0.53)
0.014 (0.36)
0.140 (3.56)
0.110 (2.79)
0.205 (5.20)
0.195 (4.95)
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94 V-0
• Metal silicon junction, majority carrier conduction
• Low forward voltage drop, low power loss
and high efficiency
• Guardring for overvoltage protection
• For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
• High temperature soldering guaranteed:
250 °C/10 seconds, 0.25" (6.35 mm) from case
• Rated for reverse surge and ESD
• 175 °C maximum operation junction temperature
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1
Mechanical Data
Case:
JEDEC TO-220AC, ITO-220AC & TO-263AB molded
plastic body
Terminals:
Plated leads, solderable per
MIL-STD-750, Method 2026
Polarity:
As marked
Mounting Position:
Any
Mounting Torque:
10 in-lbs maximum
Weight:
0.08 oz., 2.24 g
Document Number 88784
03-Mar-03
MBR16Hxx, MBRF16Hxx & MBRB16Hxx Series
Vishay Semiconductors
formerly General Semiconductor
Maximum Ratings
Parameter
(T
C
= 25 °C unless otherwise noted)
Symbol
V
RRM
V
RWM
V
DC
I
F(AV)
I
FRM
E
AS
I
FSM
I
RRM
E
RSM
V
C
dv/dt
T
J
T
STG
V
ISOL
MBR16H35 MBR16H45 MBR16H50 MBR16H60
Unit
V
V
V
A
A
mJ
A
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Max. average forward rectified current (see fig. 1)
Peak repetitive forward current at T
C
= 150 °C
(rated V
R
, 20 KHz sq. wave)
Non-repetitive avalanche energy
at 25
°C,
I
AS
= 4 A, L = 10 mH
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
Peak repetitive reverse surge current
at t
p
= 2.0
µs,
1 KH
Z
Peak non-repetitive reverse energy (8/20
µs
waveform)
Electrostatic discharge capacitor voltage
Human body model: C = 100 pF, R = 1.5 kΩ
Voltage rate of change (rated V
R
)
Operating junction temperature range
Storage temperature range
RMS Isolation voltage (MBRF type only) from terminals
to heatsink with t = 1.0 second, RH
≤
30%
35
35
35
45
45
45
16
32
80
150
1.0
20
25
10,000
50
50
50
60
60
60
0.5
A
mJ
kV
V/µs
°C
°C
V
–65 to +175
–65 to +175
4500
(1)
3500
(2)
1500
(3)
Electrical Characteristics
(T
C
= 25 °C unless otherwise noted)
Parameter
Maximum instantaneous
forward voltage
(4)
at I
F
= 16 A
at I
F
= 16 A
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
=125 °C
Symbol
V
F
I
R
MBR16H35, MBR16H45 MBR16H50, MBR16H60
Typ
–
0.52
–
6.0
Max
0.66
0.56
100
20
Typ
–
0.58
–
4.0
Max
0.73
0.62
100
20
Unit
V
µA
mA
Maximum instantaneous reverse current
at rated DC blocking voltage
(4)
Thermal Characteristics
(T
C
= 25°C unless otherwise noted)
Parameter
Typical thermal resistance from junction to case
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
Symbol
R
θJC
MBR
1.5
MBRF
3.0
MBRB
1.5
Unit
°C/W
(3) Screw mounting with 4-40 screw, where washer diameter is
≤
4.9 mm (0.19”)
(4) Pulse test: 300
µs
pulse width, 1% duty cycle
Ordering Information
Product
MBR16H35 – MBR16H60
MBRF16H35 – MBRF16H60
MBRB16H35 – MBRB16H60
Case
TO-220AC
ITO-220AC
TO-263AB
Package Code
45
45
31
45
81
Package Option
Anti-Static tube, 50/tube, 2K/carton
Anti-Static tube, 50/tube, 2K/carton
13” reel, 800/reel, 4.8K/carton
Anti-Static tube, 50/tube, 2K/carton
Anti-Static 13” reel, 800/reel, 4.8K/carton
www.vishay.com
2
Document Number 88784
03-Mar-03
MBR16Hxx, MBRF16Hxx & MBRB16Hxx Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Forward Current
Derating Curve
20
MBR, MBRB
15
150
Fig. 2 – Maximum Non-Repetitive
Peak Forward Surge Current
Peak Forward Surge Current (A)
T
J
= T
J
max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
Average Forward Current (A)
125
100
75
50
MBRF
10
5
25
0
0
0
25
50
75
100
125
150
175
1
10
100
Case Temperature (°C)
Number of Cycles at 60 H
Z
Fig. 3 – Typical Instantaneous
Forward Characteristics
Instantaneous Reverse Leakage Current
(mA)
100
100
Fig. 4 – Typical Reverse
Characteristics
Instantaneous Forward Current (A)
T
J
= 150°C
10
T
J
= 25°C
1
T
J
= 125°C
10
T
J
= 150°C
T
J
= 125°C
1
0.1
0.01
0.1
MBR16H35 -- MBR16H45
MBR16H50 -- MBR16H60
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
MBR16H35 -- MBR16H45
MBR16H50 -- MBR16H60
T
J
= 25°C
0.001
0.0001
0
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Typical Junction
Capacitance
10000
Fig. 6 – Typical Transient
Thermal Impedance
10
1000
Transeint Thermal Impedance (°C/W)
10
100
pF - Junction Capacitance
T
J
= 25°C
f = 1.0 MH
Z
Vsig = 50mVp-p
1
MBR16H35 -- MBR16H45
MBR16H50 -- MBR16H60
100
0.1
1
0.1
0.01
0.1
1
10
Reverse Voltage (V)
Document Number 88784
03-Mar-03
t, Pulse Duration (sec.)
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