SM15T Series
New Product
Vishay Semiconductors
formerly General Semiconductor
Surface Mount T
RANS
Z
ORB
®
Transient Voltage Suppressors
DO-214AB (SMC J-Bend)
Cathode Band
Breakdown Voltage
6.8 to 220V
Peak Pulse Power
1500W
0.126 (3.20)
0.114 (2.90)
0.245 (6.22)
0.220 (5.59)
Mounting Pad Layout
0.185 MAX.
(4.69 MAX.)
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.320 (8.13)
0.305 (7.75)
0.121 MIN.
(3.07 MIN.)
0.060 MIN.
(1.52 MIN.)
0.008
(0.203)
Max.
Dimensions in inches
and (millimeters)
0.320 REF
Mechanical Data
Case:
JEDEC DO-214AB (SMC) molded plastic over
passivated junction
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
For uni-directional types the band denotes the
cathode, which is positive with respect to the anode
under normal TVS operation
Standard Packaging:
12mm tape (EIA STD RS-481)
Weight:
0.003 oz., 0.093 g
Packaging Codes – Options (Antistatic):
51 – 1K per Bulk box, 10K/carton
57 – 850 per 7" plastic Reel (16mm tape), 8.5K/carton
9A – 3.5K per 13" plastic Reel (16mm tape), 35K/carton
Features
• Low profile package with built-in strain relief for
surface mounted applications
• Glass passivated junction
• Low inductance
• Excellent clamping capability
• 1500W peak pulse power capability with a 10/1000µs
waveform, repetition rate (duty cycle): 0.01%
• Fast response time: theoretically (with no parisitic
inductance) less than 1ps from 0 Volts to V
(BR)
for
undirectional and 5ns for bidirectional types
• High temperature soldering: 250°C/10 seconds at terminals
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Devices for Bidirectional Applications
For bi-directional devices, use suffix CA (e.g. SM15T10CA). Electrical characteristics apply in both directions.
Maximum Ratings & Thermal Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Peak pulse power dissipation with
a 10/1000µs waveform
(1)(2)
(Fig. 1)
Peak pulse current with a 10/1000µs waveform
(1)
(Fig. 3)
Power dissipation on infinite heatsink, T
A
= 50°C
Peak forward surge current 10ms single half sine-wave
uni-directional only
(2)
Typical thermal resistance junction to ambient air
(3)
Typical thermal resistance junction to leads
Operating junction and storage temperature range
Symbol
P
PPM
I
PPM
P
M(AV)
I
FSM
R
θJA
R
θJL
T
J
, T
STG
Value
Minimum 1500
See Next Table
6.5
200
75
15
–65 to +150
Unit
W
A
W
A
°C/W
°C/W
°C
Notes:
(1) Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25°C per Fig. 2
(2) Mounted on 0.31 x 0.31” (8.0 x 8.0mm) copper pads to each terminal
(3) Mounted on minimum recommended pad layout
Document Number 88380
03-May-02
www.vishay.com
1
SM15T Series
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
(T =25ºC unless otherwise noted)
A
Type
(1)
SM15T6V8A
SM15T7V5A
SM15T10A
SM15T12A
SM15T15A
SM15T18A
SM15T22A
SM15T24A
SM15T27A
SM15T30A
SM15T33A
SM15T36A
SM15T39A
SM15T68A
SM15T100A
SM15T150A
SM15T200A
SM15T220A
Device Marking
Code
Uni
Bi
GDE7
GDK7
GDT7
GDX7
GEG7
GEM7
GET7
GEV7
GEX7
GFE7
GFG7
GFK7
GFM7
GGG7
GGV7
GHK7
GHR7
GHR8
GDE7
BDK7
BDT7
BDX7
GEG7
BEM7
BET7
GEV7
BEX7
BFE7
GFG7
BFK7
BFM7
GGG7
GGV7
GHK7
GHR7
GHR8
Standoff Leakage
Voltage Current
(3)
Breakdown Voltage
I
RM
@V
RM
V
BR
@ I
T
(2)
(V)
V
RM
(V)
Min
Max
(
µA
)
5.80
6.40
8.55
10.2
12.8
15.3
18.8
20.5
23.1
25.6
28.2
30.8
33.3
58.1
85.5
128
171
188
1000
500
10.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
6.45
7.13
9.50
11.4
14.3
17.1
20.9
22.8
25.7
28.5
31.4
34.2
37.1
64.6
95.0
143
190
209
7.14
7.88
10.5
12.6
15.8
18.9
23.1
25.2
28.4
31.5
34.7
37.8
41.0
71.4
105
158
210
231
Test
Current
I
T
(mA)
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Clamping Voltage
V
C
@ I
PP
(10/1000µs)
(V)
(A)
10.5
11.3
14.5
16.7
21.2
25.2
30.6
33.2
37.5
41.5
45.7
49.9
53.9
92.0
137
207
274
328
143
132
103
90.0
71.0
59.5
49.0
45.0
40.0
36.0
33.0
30.0
28.0
16.3
11.0
7.20
5.50
4.60
Clamping Voltage
V
C
@ I
PP
(8/20µs)
(V)
(A)
13.4
14.5
18.6
21.7
27.2
32.5
39.3
42.8
48.3
53.5
59.0
64.3
69.7
121
178
265
353
388
746
690
538
461
368
308
254
234
207
187
169
156
143
83
56
38
28
26
Max
10
-4
/°C
5.7
6.1
7.3
7.8
8.4
8.8
9.2
9.4
9.6
9.7
9.8
9.9
10.0
10.4
10.6
10.8
10.8
10.8
α
T
Notes:
(1) For bi-directional devices add suffix “CA” instead of “A”
(2) V
BR
measured after I
T
applied for 300µs square wave pulse
(3) For bipolar devices with V
R
=10 Volts or under, the I
T
limit is doubled
Application Notes
A 1500W (SMC) device is normally selected when the threat of transients is from lightning induced transients, conducted via external leads or I/O lines. It is also
used to protect against switching transients induced by large coils or industrial motors. Source impedance at component level in a system is usually high enough
to limit the current within the peak pulse current (I
PP
) rating of this series. In an overstress condition, the failure mode is a short circuit.
www.vishay.com
2
Document Number 88380
03-May-02
SM15T Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Peak Pulse Power Rating Curve
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
100
100
Fig. 2 – Pulse Derating Curve
P
PPM
— Peak Pulse Power (kW)
75
10
50
1
0.31 x 0.31" (8.0 x 8.0mm)
Copper Pad Areas
0.1
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
25
0
0
25
50
75
100
125
150
175
200
t
d
— Pulse Width (sec.)
T
A
— Ambient Temperature (°C)
Fig. 3 – Pulse Waveform
150
20,000
Fig. 4 – Typical Junction Capacitance
Uni-Directional
C
J
— Junction Capacitance (pF)
10,000
Measured at
Zero Bias
I
PPM
— Peak Pulse Current, % I
RSM
tr = 10µsec.
Peak Value
I
PPM
100
T
J
= 25°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of I
PPM
1,000
V
R
, Measured at
Stand-Off
Voltage, V
WM
100
Uni-Directional
Bi-Directional
10
T
J
= 25°C
f = 1.0MHz
Vsig = 50mVp-p
100
400
Half Value — IPP
2
I
PPM
50
10/1000µsec. Waveform
as defined by R.E.A.
td
0
0
1.0
2.0
3.0
4.0
1
10
t — Time (ms)
V
WM
— Reverse Stand-Off Voltage (V)
Fig. 5 – Typical Transient Thermal
Impedance
100
Fig. 6 - Maximum Non-Repetitive Forward
Surge Current Uni-Directional Use Only
200
Transient Thermal Impedance (°C/W)
10
1.0
Peak Forward Surge Current,
Amperes
100
0.1
0.001
10
0.01
0.1
1
10
100
1000
8.3ms Single Half Sine-Wave
(JEDEC Method)
T
J
= T
J
max.
1
10
100
t
p
— Pulse Duration (sec)
Document Number 88380
03-May-02
Number of Cycles at 60Hz
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