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2SA1953_07

产品描述General Purpose Amplifier Applications Switching and Muting Switch Application
文件大小185KB,共5页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
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2SA1953_07概述

General Purpose Amplifier Applications Switching and Muting Switch Application

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2SA1953
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SA1953
General Purpose Amplifier Applications
Switching and Muting Switch Application
Low saturation voltage: V
CE (sat)
(1) =
−15
mV (typ.)
@I
C
=
−10
mA/I
B
=
−0.5
mA
Large collector current: I
C
=
−500
mA (max)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
−15
−12
−5
−500
−50
150
125
−55~125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TO-236MOD
SC-59
TOSHIBA
2-3F1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 0.012 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
1
2007-11-01

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2SA1953_07 2SA1953
描述 General Purpose Amplifier Applications Switching and Muting Switch Application General Purpose Amplifier Applications Switching and Muting Switch Application

 
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