DDR DRAM, 256MX8, 0.4ns, CMOS, PBGA63, ROHS COMPLIANT, FPBGA-63
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | SK Hynix(海力士) |
| 零件包装代码 | BGA |
| 包装说明 | LFBGA, BGA63,9X11,32 |
| 针数 | 63 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| 访问模式 | MULTI BANK PAGE BURST |
| 最长访问时间 | 0.4 ns |
| 其他特性 | AUTO/SELF REFRESH |
| 最大时钟频率 (fCLK) | 400 MHz |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-PBGA-B63 |
| JESD-609代码 | e1 |
| 长度 | 11.4 mm |
| 内存密度 | 2147483648 bit |
| 内存集成电路类型 | DDR DRAM |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 63 |
| 字数 | 268435456 words |
| 字数代码 | 256000000 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 95 °C |
| 最低工作温度 | |
| 组织 | 256MX8 |
| 输出特性 | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | LFBGA |
| 封装等效代码 | BGA63,9X11,32 |
| 封装形状 | RECTANGULAR |
| 封装形式 | GRID ARRAY, LOW PROFILE, FINE PITCH |
| 峰值回流温度（摄氏度） | 260 |
| 电源 | 1.8 V |
| 认证状态 | Not Qualified |
| 刷新周期 | 8192 |
| 座面最大高度 | 1.35 mm |
| 自我刷新 | YES |
| 最大待机电流 | 0.02 A |
| 最大压摆率 | 0.275 mA |
| 最大供电电压 (Vsup) | 1.9 V |
| 最小供电电压 (Vsup) | 1.7 V |
| 标称供电电压 (Vsup) | 1.8 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | OTHER |
| 端子面层 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) |
| 端子形式 | BALL |
| 端子节距 | 0.8 mm |
| 端子位置 | BOTTOM |
| 处于峰值回流温度下的最长时间 | 20 |
| 宽度 | 8 mm |
| H5PS2G83EMR-S5 | H5PS2G43EMR-Y5 | H5PS2G83EMR-S6 | H5PS2G43EMR-S5 | H5PS2G43EMR-S6 | H5PS2G83EMR-Y5 | |
|---|---|---|---|---|---|---|
| 描述 | DDR DRAM, 256MX8, 0.4ns, CMOS, PBGA63, ROHS COMPLIANT, FPBGA-63 | DDR DRAM, 512MX4, 0.45ns, CMOS, PBGA63, ROHS COMPLIANT, FPBGA-63 | DDR DRAM, 256MX8, 0.4ns, CMOS, PBGA63, ROHS COMPLIANT, FPBGA-63 | DDR DRAM, 512MX4, 0.4ns, CMOS, PBGA63, ROHS COMPLIANT, FPBGA-63 | DDR DRAM, 512MX4, 0.4ns, CMOS, PBGA63, ROHS COMPLIANT, FPBGA-63 | DDR DRAM, 256MX8, 0.45ns, CMOS, PBGA63, ROHS COMPLIANT, FPBGA-63 |
| 是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 |
| 厂商名称 | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) |
| 零件包装代码 | BGA | BGA | BGA | BGA | BGA | BGA |
| 包装说明 | LFBGA, BGA63,9X11,32 | LFBGA, BGA63,9X11,32 | LFBGA, BGA63,9X11,32 | LFBGA, BGA63,9X11,32 | LFBGA, BGA63,9X11,32 | LFBGA, BGA63,9X11,32 |
| 针数 | 63 | 63 | 63 | 63 | 63 | 63 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 访问模式 | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST |
| 最长访问时间 | 0.4 ns | 0.45 ns | 0.4 ns | 0.4 ns | 0.4 ns | 0.45 ns |
| 其他特性 | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
| 最大时钟频率 (fCLK) | 400 MHz | 333 MHz | 400 MHz | 400 MHz | 400 MHz | 333 MHz |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-PBGA-B63 | R-PBGA-B63 | R-PBGA-B63 | R-PBGA-B63 | R-PBGA-B63 | R-PBGA-B63 |
| JESD-609代码 | e1 | e1 | e1 | e1 | e1 | e1 |
| 长度 | 11.4 mm | 11.4 mm | 11.4 mm | 11.4 mm | 11.4 mm | 11.4 mm |
| 内存密度 | 2147483648 bit | 2147483648 bit | 2147483648 bit | 2147483648 bit | 2147483648 bit | 2147483648 bit |
| 内存集成电路类型 | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM |
| 内存宽度 | 8 | 4 | 8 | 4 | 4 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 63 | 63 | 63 | 63 | 63 | 63 |
| 字数 | 268435456 words | 536870912 words | 268435456 words | 536870912 words | 536870912 words | 268435456 words |
| 字数代码 | 256000000 | 512000000 | 256000000 | 512000000 | 512000000 | 256000000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 95 °C | 95 °C | 95 °C | 95 °C | 95 °C | 95 °C |
| 组织 | 256MX8 | 512MX4 | 256MX8 | 512MX4 | 512MX4 | 256MX8 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | LFBGA | LFBGA | LFBGA | LFBGA | LFBGA | LFBGA |
| 封装等效代码 | BGA63,9X11,32 | BGA63,9X11,32 | BGA63,9X11,32 | BGA63,9X11,32 | BGA63,9X11,32 | BGA63,9X11,32 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | GRID ARRAY, LOW PROFILE, FINE PITCH | GRID ARRAY, LOW PROFILE, FINE PITCH | GRID ARRAY, LOW PROFILE, FINE PITCH | GRID ARRAY, LOW PROFILE, FINE PITCH | GRID ARRAY, LOW PROFILE, FINE PITCH | GRID ARRAY, LOW PROFILE, FINE PITCH |
| 峰值回流温度（摄氏度） | 260 | 260 | 260 | 260 | 260 | 260 |
| 电源 | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 刷新周期 | 8192 | 8192 | 8192 | 8192 | 8192 | 8192 |
| 座面最大高度 | 1.35 mm | 1.35 mm | 1.35 mm | 1.35 mm | 1.35 mm | 1.35 mm |
| 自我刷新 | YES | YES | YES | YES | YES | YES |
| 最大待机电流 | 0.02 A | 0.02 A | 0.02 A | 0.02 A | 0.02 A | 0.02 A |
| 最大压摆率 | 0.275 mA | 0.235 mA | 0.275 mA | 0.275 mA | 0.275 mA | 0.235 mA |
| 最大供电电压 (Vsup) | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V |
| 最小供电电压 (Vsup) | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V |
| 标称供电电压 (Vsup) | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | OTHER | OTHER | OTHER | OTHER | OTHER | OTHER |
| 端子面层 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) |
| 端子形式 | BALL | BALL | BALL | BALL | BALL | BALL |
| 端子节距 | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 处于峰值回流温度下的最长时间 | 20 | 20 | 20 | 20 | 20 | 20 |
| 宽度 | 8 mm | 8 mm | 8 mm | 8 mm | 8 mm | 8 mm |
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