HM51W17805B Series
2,097,152-word
×
8-bit Dynamic Random Access Memory
ADE-203-462B (Z)
Rev. 2.0
May. 30, 1996
Description
The Hitachi HM51W17805B is a CMOS dynamic RAM organized 2,097,152-word
×
8-bit. It employs the
most advanced CMOS technology for high performance and low power. The HM51W17805B offers
Extended Data Out (EDO) Page Mode as a high speed access mode. Multiplexed address input permits the
HM51W17805B to be packaged in standard 28-pin plastic SOJ and 28-pin TSOP.
Features
•
Single 3.3 V (±0.3 V)
•
High speed
Access time: 60 ns/70 ns/80 ns (max)
•
Low power dissipation
Active mode: 432mW/396 mW/360 mW(max)
Standby mode : 7.2 mW (max)
: 0.54 mW (max) (L-version)
•
EDO page mode capability
•
Long refresh period
2048 refresh cycles : 32 ms
: 128 ms (L-version)
•
4 variations of refresh
RAS-only
refresh
CAS-before-RAS
refresh
Hidden refresh
Self refresh (L-version)
•
Battery backup operation (L-version)
This specification is fully compatible with the 16-Mbit DRAM specifications from TEXAS INSTRUMENTS.
HM51W17805B Series
Ordering Information
Type No.
HM51W17805BJ-6
HM51W17805BJ-7
HM51W17805BJ-8
HM51W17805BLJ-6
HM51W17805BLJ-7
HM51W17805BLJ-8
HM51W17805BS-6*
1
HM51W17805BS-7*
1
HM51W17805BS-8*
1
HM51W17805BLS-6*
1
HM51W17805BLS-7*
1
HM51W17805BLS-8*
1
HM51W17805BTT-6
HM51W17805BTT-7
HM51W17805BTT-8
HM51W17805BLTT-6
HM51W17805BLTT-7
HM51W17805BLTT-8
HM51W17805BTS-6*
1
HM51W17805BTS-7*
1
HM51W17805BTS-8*
1
HM51W17805BLTS-6*
1
HM51W17805BLTS-7*
1
HM51W17805BLTS-8*
1
Note:
1. Under development
Access time
60 ns
70 ns
80 ns
60 ns
70 ns
80 ns
60 ns
70 ns
80 ns
60 ns
70 ns
80 ns
60 ns
70 ns
80 ns
60 ns
70 ns
80 ns
60 ns
70 ns
80 ns
60 ns
70 ns
80 ns
300-mil 28-pin plastic TSOP II (TTP-28DB)
400-mil 28-pin plastic TSOP II (TTP-28DA)
300-mil 28-pin plastic SOJ (CP-28DNA)
Package
400-mil 28-pin plastic SOJ (CP-28DA)
2
HM51W17805B Series
Pin Arrangement
HM51W17805BJ/BLJ Series
HM51W17805BS/BLS Series
V
CC
I/O0
I/O1
I/O2
I/O3
WE
RAS
NC
A10
A0
A1
A2
A3
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
SS
I/O7
I/O6
I/O5
I/O4
CAS
OE
A9
A8
A7
A6
A5
A4
V
SS
HM51W17805BTT/BLTT Series
HM51W17805BTS/BLTS Series
V
CC
I/O0
I/O1
I/O2
I/O3
WE
RAS
NC
A10
A0
A1
A2
A3
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
(Top view)
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
SS
I/O7
I/O6
I/O5
I/O4
CAS
OE
A9
A8
A7
A6
A5
A4
V
SS
(Top view)
Pin Description
Pin name
A0 to A10
Function
Address input
Row/Refresh address A0 to A10
Column address
I/O0 to I/O7
RAS
CAS
WE
OE
V
CC
V
SS
NC
Data input/data output
Row address strobe
Column address strobe
Read/Write enable
Output enable
Power supply
Ground
No connection
A0 to A9
3
HM51W17805B Series
Absolute Maximum Ratings
Parameter
Voltage on any pin relative to V
SS
Supply voltage relative to V
SS
Short circuit output current
Power dissipation
Operating temperature
Storage temperature
Symbol
V
T
V
CC
Iout
P
T
Topr
Tstg
Value
–0.5 to V
CC
+ 0.5 (≤ 4.6 V (max))
–0.5 to +4.6
50
1.0
0 to +70
–55 to +125
Unit
V
V
mA
W
°C
°C
Recommended DC Operating Conditions
(Ta = 0 to +70°C)
Parameter
Supply voltage
Input high voltage
Input low voltage
Note:
1. All voltage referred to V
SS
.
Symbol
V
CC
V
IH
V
IL
Min
3.0
2.0
–0.3
Typ
3.3
—
—
Max
3.6
V
CC
+ 0.3
0.8
Unit
V
V
V
Note
1
1
1
5
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