INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
2SD560
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 100V(Min)
·High
DC Current Gain
: h
FE
= 2000(Min) @I
C
= 3.0A
·Low
Saturation Voltage
·Complement
to Type 2SB601
APPLICATIONS
·Designed
for low frequency power amplifiers and low speed
switching applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
150
V
V
CEO
Collector-Emitter Voltage
100
V
V
EBO
Emitter-Base Voltage
7
V
I
C
Collector Current-Continuous
5
A
I
CP
Collector Current-Peak
8
A
I
B
B
Base Current-Continuous
Collector Power Dissipation
@ T
a
=25℃
0.5
A
1.5
W
P
C
Collector Power Dissipation
@ T
C
=25℃
T
J
Junction Temperature
30
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE(sat)
V
BE(sat)
I
CBO
I
EBO
h
FE-1
h
FE-2
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
CONDITIONS
I
C
= 3A; L= 1mH, I
B
= 3mA
I
C
= 3A; I
B
= 3mA
B
2SD560
MIN
100
TYP.
MAX
UNIT
V
1.5
2.0
1
3
2000
500
15000
V
V
μA
mA
I
C
= 3A; I
B
= 3mA
B
V
CB
= 100V; I
E
=0
V
EB
= 5V; I
C
=0
I
C
= 3A ; V
CE
= 2V
I
C
= 5A ; V
CE
= 2V
Switching times
t
on
t
stg
t
f
Turn-on Time
Storage Time
Fall Time
I
C
= 3A , I
B1
= -I
B2
= 3mA
R
L
= 16.7Ω; V
CC
≈50V
0.5
1.0
1.0
μs
μs
μs
h
FE-1
Classifications
R
2000-5000
O
3000-7000
Y
5000-15000
isc Website：www.iscsemi.cn
2
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
2SD560
isc Website：www.iscsemi.cn
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